transistor t 2190
Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s
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BFR740L3
transistor t 2190
2110 transistor
AS-2110
transistor 1740
UMTS transistor
transistor C 2240
SiGe PNP transistor
ultra low noise transistor
transistor cross reference chart
SiGe PNP
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MTP16N25E
Abstract: S 170 MOSFET TRANSISTOR AN569 FET16
Text: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP16N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS
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MTP16N25E/D
MTP16N25E
MTP16N25E/D*
MTP16N25E
S 170 MOSFET TRANSISTOR
AN569
FET16
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js sot23
Abstract: BSH102 MGH-20
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08 Philips Semiconductors Product specification
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M3D088
BSH102
SC13b
SCA56
137107/00/02/pp12
js sot23
BSH102
MGH-20
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AN569
Abstract: MTP16N25E
Text: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP16N25E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS
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MTP16N25E/D
MTP16N25E
MTP16N25E/D*
AN569
MTP16N25E
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2N6438
Abstract: No abstract text available
Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.
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2N6438
2N6438
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MJ10004
Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line
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MJ10004
MJ10004
MJ-10004
OB 2268
darlington power transistor 10a
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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bvc62
Abstract: STR 734
Text: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification
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BLV859
SC08a
OT262B
SCA51
127041/1200/02/pp16
bvc62
STR 734
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE R t = 4 .7 k£2 R2 = 10 ki2 • Complementary to GA1 L3N ABSOLUTE M A X IM U M R ATIN G S
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1988M
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ / ¿ P A 1 8 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1814 is a switching device which can be driven directly by a 4 V power source. The JUPA1814 features a low on-state resistance and
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JUPA1814
D13804EJ1V0DS00
PA1814
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16N25E
Abstract: gsp5000 20F40
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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OE-05
0E-01
16N25E
gsp5000
20F40
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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BS170
Abstract: No abstract text available
Text: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic
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BS170
MIL-STD-202,
DS21802
BS170
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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TTP31
Abstract: No abstract text available
Text: ft P ft FORWARD INTERNATIONAL ELECTRONICS L ID . HP32 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR M ED IU M P O W E R LIN E A R SW IT C H IN G A PPLIC A TIO N S * C om plem ent to TTP31 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Symbol R ating
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TTP31
lb-375m
TTP31
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CL 2181 ic
Abstract: J04045 TRANSISTOR SE 135
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J04045 The RF Line NPIM S ilic o n V H F P o w e r T ra n sisto r 45 W — 175 MHz RF POWER TRANSISTOR NPN SILICON . . . d e sign e d prim arily for 12.5 Volt w ideband, large-signal am plifier applications in industrial and com m ercial F M equipm ent operating to 175 MHz.
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J04045
16A-01.
K-211-07
CL 2181 ic
J04045
TRANSISTOR SE 135
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Untitled
Abstract: No abstract text available
Text: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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smd transistor pnp 591
Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile
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BLV857
OT324B
smd transistor pnp 591
smd transistor xf
philips 2322 734
transistor bd139
philips SMD resistor 805
smd transistor 912
smd L17 npn
bd139 smd
SMD transistor L17
912 smd transistor
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP16N25E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high
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MTP16N25E/D
TP16N25E
21A-06
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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50n03
Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
Text: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran
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