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    TRANSISTOR T 146 Search Results

    TRANSISTOR T 146 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 146 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2SC3735

    Abstract: No abstract text available
    Text: NEC ELECTRON DEVICE / / SILICON TRANSISTOR - _ _ _ . _ _ 2S A 1462 HIGH SPEED SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2 - 8 ± Q -2 _ :_ 1.5 om t E3 -b i • High Speed Switching : t o n ^9 .0 n s TYP.


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    PDF 2SC3735 2SC3735

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED & PHOTO-TRANSISTOR TLP126 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The T O S H I B A MINI FLAT COUP L E R TLP126 is a small o u t line coupler, suitable for surface mou n t assembly. TLP126 consi s t s of a photo transistor, optically


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    PDF TLP126 TLP126 50Vrms

    2SA1464

    Abstract: 1S955 2SC3739
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739


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    PDF 2SA1464 2SA1464 1S955 2SC3739

    JE370

    Abstract: LT 7706 MJE520 Je52 MJE520 MOTOROLA
    Text: MOTOROLA SC 15E 0 I fc,3b?25M ÜOflS331 4 | XSTRS/R F T -3* 3 -ö f MOTOROLA SEMICONDUCTOR MJE520 TECHNICAL DATA 3 AMPERE PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 30 V O L T S 25 W A T T S . . .'designed for use in general-purpose amplifier and switching


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    PDF OflS331 MJE520 JE370 JE370 LT 7706 MJE520 Je52 MJE520 MOTOROLA

    Y parameters of transistors at41533

    Abstract: No abstract text available
    Text: What HEWLETT* m iltm PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data A T -4 1 5 1 1 A T -4 1 5 3 3 F e a tu re s • General Purpose NPN Bipolar Transistor • 900 MHz Performance: A T -41511: 1 dBNF, 15.5 dBGA A T -41533: 1 dBNF, 14.5 dBGA


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    PDF OT-23 OT-143 sAT-41511 AT-41533 OT-23, AT-415 OT-143. Y parameters of transistors at41533

    CA3046E

    Abstract: si3206 et 3045
    Text: d e | 3fl?50fli o a m t o o 2 01E 14600 D G E SOLID STATE 01 3875081 G E SOLID STATE Arrays _ CA3045, CA3046 General-Purpose N-P-N Transistor Arrays T h re e Isolated Transistors and O ne D ifferen tiallyC o n nected Transistor Pair For L ow -P o w er A pplications at Frequencies


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    PDF 50fli CA3045, CA3046 256RI CA3046E si3206 et 3045

    transistor bc 146

    Abstract: transistor bc 570 BC146G BC146 bc 477 transistor 146R X10-4 transistor bc 100 Bc 140 transistor low noise transistor bc
    Text: BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR I COLOR DOT MECHANICAL OUTLINE GENERAL DESCRIPTION M T-42 Y — YELLOW ,G - GREEN 1.8 The BC 146 is a NPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing


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    PDF BC146 BC146 8933M transistor bc 146 transistor bc 570 BC146G bc 477 transistor 146R X10-4 transistor bc 100 Bc 140 transistor low noise transistor bc

    transistor bc 146

    Abstract: transistor bc 570 BC146 TRANSISTOR BC 550 c Package MT-42 146R BC146G X10-4 TRANSISTOR BC 550 b Z15K
    Text: BC146 MINIATURE NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR 1 COLOR DOT MECHANICAL OUTLINE GENERAL DESCRIPTION M T-42 The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment


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    PDF BC146 BC146 z-15K BC146G transistor bc 146 transistor bc 570 TRANSISTOR BC 550 c Package MT-42 146R X10-4 TRANSISTOR BC 550 b Z15K

    2SC940 NEC

    Abstract: 2SC940
    Text: SEC SILICON POWER TRANSISTOR ELECTRON DEVICE 2SC940 B /W TV HORIZONTAL DEFLECTION OUTPUT NPN SILICON EPITAXIAL MESA TRANSISTOR PACKAGE DIMENSIONS in millimeters inches 022.22MAX. (0O.874MAX.) ^ 1 Suitable fo r H orizo ntal 1 4 " B/W T V < i de flection O U TPU T


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    PDF 2SC940 22MAX. 874MAX. 2SC940 NEC 2SC940

    Untitled

    Abstract: No abstract text available
    Text: W m H EW L E T T rnüCM PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


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    PDF AT-31011 AT-31033 AT-31033: AT-31033 OT-23, OT-143.

    AT415

    Abstract: No abstract text available
    Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga


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    PDF AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 1041T060
    Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low


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    2sc287a

    Abstract: J JB transistor
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC287A B VHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D IS K MOLD" D E S C R IP T IO N P A C K A G E D IM E N S IO N S (U nit : mm) The 2SC287A(B) ¡5 an NPN silicon epitaxial transistor intended for use as V H F oscillator in a tuner of a T V receiver.


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    PDF 2SC287A 1100MHz J JB transistor

    AT41485

    Abstract: No abstract text available
    Text: Thal H E W L E T T * mLfiM P A C K A R D Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped­ ances that are easy to match for low noise and moderate power applications. Applications include


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    PDF AT-41485 AT-41485 ionimpla27 Kn/50 DD17b43 AT41485

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T m in M P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


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    PDF AT-32011 AT-32033 T-32011 14dBG T-32033 OT-23 OT-143 AT-32033

    Untitled

    Abstract: No abstract text available
    Text: ' , > CL146 I ; NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G E N E R A L D E S C R IP T IO N T 0 -9 2 B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment


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    PDF CL146 CL146 TELEX43510 8933tt,

    6d20

    Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E
    Text: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


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    PDF IGT8D20 6D20- PULSEWIDTHa60 6d20 6D-20 250M BE20 IGT8E20 VQE 23 E

    Transistor BFr 99

    Abstract: Transistor BFR 96 transistor 2sc 548
    Text: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed


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    PDF fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548

    P3H7

    Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
    Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


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    PDF fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma

    539 MOTOROLA transistor

    Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
    Text: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con­


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    PDF b3b72S4 LT4700 539 MOTOROLA transistor LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


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