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    TRANSISTOR SURFACE MOUNT ND Search Results

    TRANSISTOR SURFACE MOUNT ND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SURFACE MOUNT ND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2412KPT

    Abstract: nd 16 TRANSISTOR SOT-23
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2412KPT SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=2.0pF(Typ.) CONSTRUCTION


    Original     		PDF 2SC2412KPT OT-23) 200mW OT-23 2SC2412KPT nd 16 TRANSISTOR SOT-23

    2SC2411KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(I C=500mA)


    Original     		PDF 2SC2411KGP OT-23) 500mA) 200mW OT-23 2SC2411KGP

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2412KGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=50mA) * Low cob. Cob=2.0pF(Typ.)


    Original     		PDF 2SC2412KGP OT-23) 200mW OT-23

    SOT-89 marking BC

    Abstract: TRANSISTOR BC 187 pnp on TRANSISTOR BC 187 on BC 187 TRANSISTOR bc 187 npn transistor CBCX69
    Text: Central CBCX68 NPN CBCX69 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEM ICO NDUCTO R CBCX68, C BC X69 types are complementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount


    OCR Scan     		PDF CBCX68 CBCX69 CBCX68, OT-89 CP314/CP714, 20-February OT-89 SOT-89 marking BC TRANSISTOR BC 187 pnp on TRANSISTOR BC 187 on BC 187 TRANSISTOR bc 187 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: Central“ CZT2000 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICC NDUCTORCZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    OCR Scan     		PDF CZT2000 NDUCTORCZT2000 OT-223 CHARACTERISTICS00 160mA, 100hA 160mA

    TRANSISTOR motorola 416 IC

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Prelim inary Data Sheet B ias R esistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network T h e B R T Bias Resistor Transistor contains a single transistor with a monolithic


    OCR Scan     		PDF DTA143EE TRANSISTOR motorola 416 IC

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK582-60A OT223

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		PDF BUK566-60H BUK566-60H

    JANTXV2N2222AUA

    Abstract: transistor s71 2N2222AUA
    Text: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed


    OCR Scan     		PDF 2N2222AUA 2N2222AUA MIL-PRF-19500/255 JANTX/TXV2N2222AUA 00D31Ã JANTXV2N2222AUA transistor s71

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    OCR Scan     		PDF DTC114TE DTC114TE OT-416/SC-90

    transistor BR A 94

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    OCR Scan     		PDF DTC114TE DTC114TE transistor BR A 94

    KSH13003

    Abstract: No abstract text available
    Text: KSH13003 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High speed Sw itching Suitable for Sw itching R egulator M otor Control Straight Lead I.PACK, I Suffix Lead Formed for Surface M ount Applications (No Suffix)


    OCR Scan     		PDF KSH13003

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF PHB36N06E SQT404

    BUK481-60A

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK481-60A OT223 13BOARD OT223. OT223 BUK481-60A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK464-60H

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating


    OCR Scan     		PDF BF721T1/D BF721T1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF PHB36N06E SQT404

    2sc4571

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC4570 2SC4570 SC-70) 4570-T PACK878

    BUK581-60A

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan     		PDF BUK581-60A OT223 OT223. OT223 BUK581-60A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan     		PDF OT223 BUK581-100A OT223. BUK581 -100A OT223

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in


    OCR Scan     		PDF BUK465-60A SQT404

    KI 2222A

    Abstract: transistor 2222a sot-363 MARKING l0
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


    OCR Scan     		PDF CMKT2207 OT-363 150mA, KI 2222A transistor 2222a sot-363 MARKING l0

    marking P268

    Abstract: No abstract text available
    Text: Central CZT2680 semiconductor Corp. SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching


    OCR Scan     		PDF CZT2680 OT-223 OT-223 14-November marking P268