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    TRANSISTOR STUDY CIRCUIT Search Results

    TRANSISTOR STUDY CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR STUDY CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		PDF AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    arcing spice model

    Abstract: relay spice model 5.0000m
    Text: Simulating with SPICE - an electromechanical example. In this study we look at how SPICE can be used to model a relay in some detail. The schematic shows the full model which is split into the following parts : The coil and drive. The transistor drives the coil which is represented by the components between the collector and supply, V3.


    Original     		PDF 0000M 0690M 0770M 0850M 0930M 1010M arcing spice model relay spice model 5.0000m

    74HC123 watchdog

    Abstract: application circuits of ic 74HC123 74HC123 PC319 PC358 PC393 PC4558 PC842 transistor marking CS Gyro Motor
    Text: Introduction Analog Master , semi-custom IC which realizes one chip solution of analog circuits. Analog Master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused elements bipolar transistors, resistors, and capacitors already


    Original     		PDF

    E-MOSFET

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DIVISION Application Note: AN-201 PRELIMINARY CPC1580 Application Technical Information AN-201-R00D www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION 1 AN-201 PRELIMINARY Using the CPC1580 Isolated Gate Driver IC The CPC1580 is an excellent choice for remote


    Original     		PDF AN-201 CPC1580 AN-201-R00D E-MOSFET

    30MHz RF loop antenna

    Abstract: AN1299 EL5220 ISL28291 ISL29291 LMV722 opamp schematic
    Text: Application Note 1561 Author: Don LaFontaine Radiated Interference in Audio Circuits Abstract The proliferation of wireless transceivers in portable applications has created a need for increased attention to an electronic circuits' ability to operate in the vicinity of


    Original     		PDF EMC-17, AN1561 30MHz RF loop antenna AN1299 EL5220 ISL28291 ISL29291 LMV722 opamp schematic

    DATASHEET OF IC 741

    Abstract: LM1011 oscillator circuit with op amp 741 using ic 741 The Monolithic Operational Amplifier A Tutorial oscillator circuit with op amp 741 its output NPN Transistor 6A 70V 1G Linear Applications Handbook National Semiconductor sine wave Oscillator jfet circuit 741 dual op amp
    Text: National Semiconductor Appendix A A December 1974 Invited Paper IEEE Journal of Solid-State Circuits Vol SC-9 No 6 Abstract A study is made of the integrated circuit operational amplifier IC op amp to explain details of its behavior in a simplified and understandable manner Included are


    Original     		PDF

    NPTB00004

    Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012
    Text: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-012 AN-012: 64-QAM NPTB00004 NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012

    MRF18085A

    Abstract: AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1938/D AN1938 Sensitivity of High Power RF Transistors to Source and Output Loads Freescale Semiconductor, Inc. Prepared by: Béatrice Branger and Olivier Lembeye


    Original     		PDF AN1938/D AN1938 MRF18085A AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study

    DN4148

    Abstract: 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109
    Text: New Models Simulate RF Circuits Its no news to those who simulate that the accuracy of SPICE is directly related to the accuracy of the models. What may be news is that simulation of high frequency circuits well into the gigahertz range is now possible due to the introduction of some new RF


    Original     		PDF 36E-13 111E-09 80E-08 82E-01 758E-12 822E-12 12E-13 40E-14 1E-14 40E-01 DN4148 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109

    Reproducing Power Hysteresis with Circuit Envelope Simulation

    Abstract: No abstract text available
    Text: 2013 IEEE International RF and Microwave Conference RFM2013 , December 09-11, 2013 - Penang, Malaysia Reproducing Power Hysteresis with Circuit Envelope Simulation Yu Zhu, Oleksey Klimashov, and Dylan Bartle Skyworks Solutions, Inc. 20 Sylvan Rd., Woburn, USA


    Original     		PDF RFM2013) Reproducing Power Hysteresis with Circuit Envelope Simulation

    Marconi radiation hard

    Abstract: hm65656 transistor study
    Text: Dose Rate Effects Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates


    Original     		PDF 300Krad Marconi radiation hard hm65656 transistor study

    Dose

    Abstract: transistor study Marconi radiation hard
    Text: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates


    Original     		PDF 300Krad Dose transistor study Marconi radiation hard

    webcam circuit diagram

    Abstract: 47803 NXP 125 kHz RFID tag EM4001 webcam Schematic Diagram schematic satellite finder finder delay relay
    Text: NI myRIO Project Essentials Guide Ed Doering NI myRIO Project Essentials Guide Ed Doering Electrical and Computer Engineering Department Rose-Hulman Institute of Technology iv Printed April 23, 2014. Download the latest version at http://www.ni.com/myrio/project-guide.


    Original     		PDF be/kW4v16GuAFE, be/1Oib10sojds, webcam circuit diagram 47803 NXP 125 kHz RFID tag EM4001 webcam Schematic Diagram schematic satellite finder finder delay relay

    "Phase Discriminator"

    Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor

    "Phase Discriminator"

    Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study

    Untitled

    Abstract: No abstract text available
    Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


    Original     		PDF

    DD 127 transistor

    Abstract: 8439 disadvantage of crystal oscillator transistor use in oscillator RC phase shift oscillator AN-400 C1995 COP410C COP444C transistor study
    Text: National Semiconductor Application Note 400 Abdul Aleaf August 1986 INTRODUCTION The most important characteristic of CMOS-COPS is its low power consumption This low power feature does not exist in TTL and NMOS systems which require the selection of low power IC’s and external components to reduce power


    Original     		PDF

    Logic Gates

    Abstract: XC4000EX XC4000XL XC4000XV XC4025E XC4036EX XC4085XL PQFP die size
    Text: Intro / Roadmap – 1 Table of Contents Intro / Roadmap – 2 Section 1 The Future of Programmable Logic Section 2 Product Overview Section 3 Case study #1 - DRAM controller Section 4 Case study #2 - USB interface Section 5 Case study #3 - PCI interface Section 6


    Original     		PDF

    uPC5023

    Abstract: uPc842 nec 10f uPC5700 oa10 diode specs UPC5020 SW01A RG03 upc5024 UPC4558
    Text: µPC5700 Series Analog Master II AM2 Family ted a r g e t y In nce l h g i H n ma o r i o s f i r c e e tP Pr High- perior Cos u with S SI A g o l Ana C New s t c u Prod What Is an Analog Master? An analog master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused


    Original     		PDF PC5700 A15458EJ1V0PF00 uPC5023 uPc842 nec 10f uPC5700 oa10 diode specs UPC5020 SW01A RG03 upc5024 UPC4558

    Untitled

    Abstract: No abstract text available
    Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced


    Original     		PDF 300oC,

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70103-1E Semicustom ASTRO MASTER III BIPOLAR Semi-Custom LSI for High Frequency Analog Circuits MB54600 Series • DESCRIPTION ASTRO MASTER III is a semicustom LSI that uses master-slice technology and is suitable for high frequency


    OCR Scan     		PDF DS06-70103-1E MB54600 MB546xx 20-pin, FPT-20P-M03) 34-pin,

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70104-3E Semicustom Bi-CMOS ASTRO MASTER IV Specification for PLL frequency synthesizers MB1570 Series • DESCRIPTION The ASTRO MASTER IV is a master-slice type semi-custom LSI ideal for use in high-frequency front-end circuits


    OCR Scan     		PDF DS06-70104-3E MB1570