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    TRANSISTOR ST2 Search Results

    TRANSISTOR ST2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ST2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    st2222a

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general


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    ST2222A CMST2222A PDF

    2SC1213

    Abstract: No abstract text available
    Text: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


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    2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


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    2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 Junct13A PDF

    ST2SC

    Abstract: 2SC1213 transistor 2SA673 2SA673 2SA673A 2SC1213A ST2SA673
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


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    2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC transistor 2SA673 2SA673 2SC1213A ST2SA673 PDF

    ST2SC

    Abstract: 2SC1213 st 120 transistor transistor 2SA673 2SA673 2SA673A 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213 st2sa673
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


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    2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC st 120 transistor transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213 st2sa673 PDF

    ST2SC

    Abstract: 2SC1213 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673 2SA673A
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


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    2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673 PDF

    ST2SC

    Abstract: 2SC1213 2sc1213 TRANSISTOR equivalent transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a 2SA673A transistor 2sc1213
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


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    2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC 2sc1213 TRANSISTOR equivalent transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general


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    ST2222A CMST2222A OT-323 PDF

    DK 53 code transistor

    Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS


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    SC70-6 SCD47 113062/1100/01/pp8 DK 53 code transistor transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor PDF

    CMST2222A

    Abstract: No abstract text available
    Text: Central" Sem iconductor Corp. CMST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: mmmn mini The CEN TRAL S E M IC O N D U C T O R CM ST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount


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    CMST2222A CMST2222A OT-323 PDF

    ST2907A

    Abstract: No abstract text available
    Text: Central Sem iconductor Corp. CM ST2907A SUPER-MINI PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M ST2907A type is an P N P silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mlni surface mount


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    ST2907A PDF

    xl 6009

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION


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    BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009 PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


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    BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 transistor Bft92 NT 407 F power transistor PDF

    BLV935

    Abstract: ferroxcube 4322 ferroxcube tx
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile


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    BLV935 OT273 SCDS47 127041/500/01/pp12 BLV935 ferroxcube 4322 ferroxcube tx PDF

    2222 031 capacitor philips 2222 424

    Abstract: 2222 031 capacitor philips BLF247B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain


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    BLF247B MAM098 OT262A1 SCD34 846915/1500/01/pp16 2222 031 capacitor philips 2222 424 2222 031 capacitor philips BLF247B PDF

    2108 npn transistor

    Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70


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    SC70-6 base218, SCD47 113062/1100/01/pp8 2108 npn transistor Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70 PDF

    xl 6009

    Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and


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    BLV910 OT171 SCD38 123052/1500/01/pp12 xl 6009 MLC660 MLC662 L6 PHILIPS 4894 BLV910 PDF

    film dielectric trimmer PTFE

    Abstract: 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and


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    BLV934 OT171 SCD38 123052/1500/01/pp12 film dielectric trimmer PTFE 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679 PDF

    "Dual PNP Transistor"

    Abstract: Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMT1 Dual PNP transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual PNP transistor PUMT1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70


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    SC70-6 SCD47 113062/1100/01/pp8 "Dual PNP Transistor" Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1 PDF

    B.A date sheet karachi

    Abstract: BF547W marking code e2 m1b marking BF547 SCD31
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor


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    BF547W OT323 BF547W BF547. MBC870 SCD31 123065/1500/02/pp12 B.A date sheet karachi marking code e2 m1b marking BF547 SCD31 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    c39 transistor

    Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    BLV950 SC08b OT262A2 SCDS47 127061/1100/02/pp16 c39 transistor transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37 PDF

    7281660

    Abstract: BU506DF
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BU506DF High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.


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    BU506DF OT186 00774bl 7110fl2b 0774L2 7281660 PDF

    M 9639 transistor

    Abstract: application IC 7411 SiS 486
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage


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