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    TRANSISTOR ST2 Search Results

    TRANSISTOR ST2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ST2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1213

    Abstract: No abstract text available
    Text: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


    Original     		PDF 2SC1213 2SC1213A 2SA673 2SA673A 2SC1213

    Untitled

    Abstract: No abstract text available
    Text: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


    Original     		PDF 2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 Junct13A

    ST2SC

    Abstract: 2SC1213 transistor 2SA673 2SA673 2SA673A 2SC1213A ST2SA673
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


    Original     		PDF 2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC transistor 2SA673 2SA673 2SC1213A ST2SA673

    ST2SC

    Abstract: 2SC1213 st 120 transistor transistor 2SA673 2SA673 2SA673A 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213 st2sa673
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


    Original     		PDF 2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC st 120 transistor transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213 st2sa673

    ST2SC

    Abstract: 2SC1213 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673 2SA673A
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


    Original     		PDF 2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673

    ST2SC

    Abstract: 2SC1213 2sc1213 TRANSISTOR equivalent transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a 2SA673A transistor 2sc1213
    Text: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.


    Original     		PDF 2SC1213 2SC1213A 2SA673 2SA673A 2SC1213 ST2SC 2sc1213 TRANSISTOR equivalent transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213

    DK 53 code transistor

    Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS


    Original     		PDF SC70-6 SCD47 113062/1100/01/pp8 DK 53 code transistor transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor

    xl 6009

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION


    Original     		PDF BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 transistor Bft92 NT 407 F power transistor

    BLV935

    Abstract: ferroxcube 4322 ferroxcube tx
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile


    Original     		PDF BLV935 OT273 SCDS47 127041/500/01/pp12 BLV935 ferroxcube 4322 ferroxcube tx

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23

    2222 031 capacitor philips 2222 424

    Abstract: 2222 031 capacitor philips BLF247B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain


    Original     		PDF BLF247B MAM098 OT262A1 SCD34 846915/1500/01/pp16 2222 031 capacitor philips 2222 424 2222 031 capacitor philips BLF247B

    2108 npn transistor

    Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70


    Original     		PDF SC70-6 base218, SCD47 113062/1100/01/pp8 2108 npn transistor Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70

    xl 6009

    Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and


    Original     		PDF BLV910 OT171 SCD38 123052/1500/01/pp12 xl 6009 MLC660 MLC662 L6 PHILIPS 4894 BLV910

    "Dual PNP Transistor"

    Abstract: Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMT1 Dual PNP transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual PNP transistor PUMT1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70


    Original     		PDF SC70-6 SCD47 113062/1100/01/pp8 "Dual PNP Transistor" Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1

    B.A date sheet karachi

    Abstract: BF547W marking code e2 m1b marking BF547 SCD31
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor


    Original     		PDF BF547W OT323 BF547W BF547. MBC870 SCD31 123065/1500/02/pp12 B.A date sheet karachi marking code e2 m1b marking BF547 SCD31

    c39 transistor

    Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,


    Original     		PDF BLV950 SC08b OT262A2 SCDS47 127061/1100/02/pp16 c39 transistor transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37

    st2222a

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general


    OCR Scan     		PDF ST2222A CMST2222A

    Untitled

    Abstract: No abstract text available
    Text: Central semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general


    OCR Scan     		PDF ST2222A CMST2222A OT-323

    CMST2222A

    Abstract: No abstract text available
    Text: Central" Sem iconductor Corp. CMST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: mmmn mini The CEN TRAL S E M IC O N D U C T O R CM ST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount


    OCR Scan     		PDF CMST2222A CMST2222A OT-323

    ST2907A

    Abstract: No abstract text available
    Text: Central Sem iconductor Corp. CM ST2907A SUPER-MINI PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M ST2907A type is an P N P silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mlni surface mount


    OCR Scan     		PDF ST2907A

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    7281660

    Abstract: BU506DF
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BU506DF High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.


    OCR Scan     		PDF BU506DF OT186 00774bl 7110fl2b 0774L2 7281660

    M 9639 transistor

    Abstract: application IC 7411 SiS 486
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage


    OCR Scan     		PDF