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    TRANSISTOR ST Z7 Search Results

    TRANSISTOR ST Z7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ST Z7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    Untitled

    Abstract: No abstract text available
    Text: SD57120 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120W with 13dB gain @ 960MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european


    Original     		PDF SD57120 960MHz 2002/95/EC SD57120

    transistor st z7

    Abstract: 200B 20AWG 700B M252 SD57120
    Text: SD57120 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120W with 13dB gain @ 960MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european


    Original     		PDF SD57120 960MHz 2002/95/EC SD57120 transistor st z7 200B 20AWG 700B M252

    200B

    Abstract: 20AWG 700B JESD97 M252 SD57120H
    Text: SD57120H RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 13 dB gain @ 960 MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european


    Original     		PDF SD57120H 2002/95/EC SD57120H 200B 20AWG 700B JESD97 M252

    200B

    Abstract: 700B SD56120 balun 50 ohm
    Text: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power


    Original     		PDF SD56120 SD56120 200B 700B balun 50 ohm

    Untitled

    Abstract: No abstract text available
    Text: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power


    Original     		PDF SD56120 SD56120

    200B

    Abstract: 700B SD56120
    Text: SD56120C RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power


    Original     		PDF SD56120C SD56120C 200B 700B SD56120

    PD57006-E

    Abstract: SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30
    Text: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD57006-E PowerSO-10RF PowerSO-10RF. PD57006-E SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30

    PD57006S-E

    Abstract: AN1294 J-STD-020B PD57006 PD57006-E PD57006S PD57006STR-E PD57006TR-E
    Text: PD57006-E PD57006S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD57006-E PD57006S-E PowerSO-10RF PD57006 PowerSO-10RF. PD57006S-E AN1294 J-STD-020B PD57006-E PD57006S PD57006STR-E PD57006TR-E

    Untitled

    Abstract: No abstract text available
    Text: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD57006-E PowerSO-10RF PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


    Original     		PDF PD55025-E PD55025S-E PowerSO-10RF PowerSO-10Ry

    PD55025-E

    Abstract: PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841
    Text: PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


    Original     		PDF PD55025-E PD55025S-E PowerSO-10RF PowerSO-10RF. PD55025-E PD55025 AN1294 J-STD-020B PD55015STR-E PD55015TR-E PD55025S-E RF Transistor s-parameter ST 0841

    AN1294

    Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
    Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package


    Original     		PDF PD57006-E PD57006S-E 945MHz PowerSO-10RF PD57006 PowerSO-10RF. PD570and AN1294 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E

    Untitled

    Abstract: No abstract text available
    Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package


    Original     		PDF PD54003-E PowerSO-10RF PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package


    Original     		PDF PD54003-E PowerSO-10RF PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


    Original     		PDF PD55035-E PD55035S-E PowerSO-10RF

    AN1294

    Abstract: J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E
    Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


    Original     		PDF PD55035-E PD55035S-E PowerSO-10RF PowerSO10RF. AN1294 J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E

    PD55035-E

    Abstract: PD55035 PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162
    Text: PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package


    Original     		PDF PD55035-E PD55035S-E 500MHz PowerSO-10RF PD55035 PowerSO-10Rand PD55035-E PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162

    Untitled

    Abstract: No abstract text available
    Text: PD54008L-E RF power transistors The LdmoST Plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 8W with 15 dB gain @ 500MHz ■ New leadless plastic package ■ EDS protection ■ Supplied in tape & reel of 3K units


    Original     		PDF PD54008L-E 500MHz 2002/93/EC PD54008L-E

    smd transistor marking z11

    Abstract: JESD97 J-STD-020B PD54008L-E
    Text: PD54008L-E RF power transistors The LdmoST Plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 8W with 15 dB gain @ 500MHz ■ New leadless plastic package ■ EDS protection ■ Supplied in tape & reel of 3K units


    Original     		PDF PD54008L-E 500MHz 2002/93/EC PD54008L-E smd transistor marking z11 JESD97 J-STD-020B

    k 3436 transistor

    Abstract: J-STD-020B PD54003-E PD54003S-E PD54003STR-E PD54003TR-E RF Transistor s-parameter s22f 6 pin
    Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package PowerSO-10RF formed lead


    Original     		PDF PD54003-E PowerSO-10RF PowerSO-10RF. k 3436 transistor J-STD-020B PD54003-E PD54003S-E PD54003STR-E PD54003TR-E RF Transistor s-parameter s22f 6 pin

    2SB1212

    Abstract: 2SD1812 transistor 2Sb1212
    Text: 2SB1212 / T ransistors h Z7 > y 2SB1212 X t f ^ d r V 7 ^ 7 ° U - ^ P N P '> U = I> Power Amp. Epitaxial Planar PNP Silicon Transistor • W f ^ jiH /D im e n s io n s Unit : mm 1) ¡ S f if f i? < 6 > 3 (B V c e o = - 1 6 0 V ) o 2 )A S O tf£ < , 3) C o b *^ J ^ t'o


    OCR Scan     		PDF 2SB1212 2SD1812 T0-92L SC-51 2SB1212 transistor 2Sb1212

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF