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    TRANSISTOR SS9012 Search Results

    TRANSISTOR SS9012 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SS9012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    SS9012

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.


    Original     		PDF SS9012 625mW) -500mA) SS9013 SS9012

    Untitled

    Abstract: No abstract text available
    Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.


    Original     		PDF SS9013 625mW) 500mA) SS9012

    SS9012

    Abstract: SS9013 PT-625mW
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excelent hFE linearity.


    Original     		PDF SS9012 625mW) -500mA) SS9013 -50mA -500mA -500mA, SS9012 SS9013 PT-625mW

    SS9013

    Abstract: SS9012 transistor SS9013
    Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excelent hFE linearity.


    Original     		PDF SS9013 625mW) 500mA) SS9012 500mA 500mA, SS9013 SS9012 transistor SS9013

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


    Original     		PDF OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


    Original     		PDF

    Transistor 9012

    Abstract: H9012 8550S SS9012
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A047BJ-00 芯片厚度：240±20µm 管芯尺寸：470x470µm 2 焊位尺寸：B 极 103×103µm2，E 极 98×98µm2


    Original     		PDF 100mm A047BJ-00 SS9012H90128550S 625mW -700mA -25VIE -50mA -500mA Transistor 9012 H9012 8550S SS9012

    Transistor 9012

    Abstract: H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A043BJ-00 芯片厚度：240±20µm 管芯尺寸：430x430µm 2 焊位尺寸：B 极 107×107µm2，E 极 101×101µm2


    Original     		PDF 100mm A043BJ-00 SS9012H90128550S 625mW -500mA -25VIE -50mA Transistor 9012 H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V

    s9013

    Abstract: transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 SS9013FBU S9013 TO92 SS9013 SS9013-HBU S9013 to-92
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 SS9013FBU SS9013FTA SS9013FTF s9013 transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 S9013 TO92 SS9013-HBU S9013 to-92

    SS9012

    Abstract: transistor SS9012 SS9012 APPLICATIONS
    Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9012 625mW) -500mA) SS9013 SS9012 O-92-3 transistor SS9012 SS9012 APPLICATIONS

    transistor SS9013

    Abstract: ss9012 cross
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 transistor SS9013 ss9012 cross

    SS9012

    Abstract: SS9013
    Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9012 625mW) -500mA) SS9013 SS9012 SS9013

    SS9012

    Abstract: SS9013
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9013 625mW) 500mA) SS9012 SS9012 SS9013

    Untitled

    Abstract: No abstract text available
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9013 625mW) 500mA) SS9012

    SS9012

    Abstract: SS9013
    Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF SS9012 625mW) -500mA) SS9013 SS9012 SS9013

    Untitled

    Abstract: No abstract text available
    Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (lc =500mA) Complementary to SS9012 Excellent hFE linearity.


    OCR Scan     		PDF SS9013 625mW) 500mA) SS9012

    Untitled

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (Ic = -500mA) Complementary to SS9013 Excellent lvE linearity.


    OCR Scan     		PDF SS9012 625mW) -500mA) SS9013 ibm42

    Untitled

    Abstract: No abstract text available
    Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. {Pt“ 625mW • High Collector Current. lc“ 500mA) • Complementary to SS9012 • Excelent hFE linearity.


    OCR Scan     		PDF SS9013 625mW) 500mA) SS9012 500mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. P t = 6 2 5 itiW High Collector Current. (lc=500mA) Complementary to SS9012 Excellent hFE linearity.


    OCR Scan     		PDF SS9013 500mA) SS9012

    Untitled

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.


    OCR Scan     		PDF SS9012 625mW -500m

    Untitled

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.


    OCR Scan     		PDF SS9012 -500mA) S9013

    SS9012

    Abstract: SS9013
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hpE linearity.


    OCR Scan     		PDF SS9012 625mW) -500mA) SS9013 -100nA, g-500 SS9012 SS9013

    2ss9014

    Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
    Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013


    OCR Scan     		PDF 71b4142 SS9012 825mW) -500mA) SS9013 Breakdo4142 SS9014 fe-14 1-10C 2ss9014 ss8015 A 671 transistor SS9013 U007 transistor ss9014 T-31-21 50nr