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    TRANSISTOR SOT89 Search Results

    TRANSISTOR SOT89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor

    Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
    Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor


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    PDF X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    BFQ19

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic


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    PDF BFQ19 BFQ19

    Philips FA 145

    Abstract: BFQ17
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION BFQ17 PINNING NPN transistor in a SOT89 plastic


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    PDF BFQ17 MBK514 Philips FA 145 BFQ17

    sot89 "NPN TRANSISTOR"

    Abstract: npn TRANSISTOR SOT89 BFQ18A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ18A PINNING NPN transistor in a plastic SOT89


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    PDF BFQ18A MBK514 sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 BFQ18A

    TRANSISTOR SMD CODE PACKAGE SOT89

    Abstract: GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ149 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope.


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    PDF BFQ149 MBK514 TRANSISTOR SMD CODE PACKAGE SOT89 GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


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    PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


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    PDF 2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2SB1424

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


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    PDF 2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044

    mpsa13l

    Abstract: mpsa13 MPSA13G
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


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    PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K MPSA13L-T92-A-B mpsa13l MPSA13G

    MPSA13L

    Abstract: utc mpsa13
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Normal Lead Free


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    PDF MPSA13 MPSA13 OT-89 MPSA13-AB3-R MPSA13L-AB3-R MPSA13G-AB3-R MPSA13-T92-B MPSA13L-T92-B MPSA13G-T92-B MPSA13-T92-K MPSA13L utc mpsa13

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA113 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Ordering Number Normal Lead Free


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    PDF MPSA113 MPSA113 OT-89 MPSA113-AB3-R MPSA113L-AB3-R MPSA113G-AB3-R MPSA113-T92-B MPSA113L-T92-B MPSA113G-T92-B MPSA113-T92-K

    MPSA13L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


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    PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K QW-R208-001 MPSA13L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW „ ORDERING INFORMATION


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    PDF MPSA14 MPSA14 625mW MPSA14L-AB3-R MPSA14G-AB3-R MPSA14L-T92-K MPSA14G-T92-K MPSA14L-T92-B MPSA14G-T92-B OT-89

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC


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    PDF UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating


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    PDF ZXTP5401Z -150V -600mA ZXTN5551Z ZXTP5401ZTA D-81541

    TS16949

    Abstract: ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89
    Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating


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    PDF ZXTP5401Z -150V -600mA ZXTN5551Z ZXTP5401ZTA -160etex D-81541 TS16949 ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89

    Untitled

    Abstract: No abstract text available
    Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound


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    PDF BCX5316Q J-STD-020 MIL-STD-202 -500mV DS37033

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


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    PDF 2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017

    marking dk sot-89

    Abstract: 2SC4672L-AB3-R dk SOT89 2SC4672 UM MARKING SOT89 transistor dk 50 2SC4672-AB3-R dk SOT-89 SOT-89 marking DK marking DK sot89
    Text: UNISONIC TECHNOLOGIES CO., 2SC4672 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION 1 The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at


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    PDF 2SC4672 2SC4672 OT-89 2SC4672L 2SC4672-AB3-R 2SC4672L-AB3-R QW-R208-004 marking dk sot-89 2SC4672L-AB3-R dk SOT89 UM MARKING SOT89 transistor dk 50 dk SOT-89 SOT-89 marking DK marking DK sot89

    dk marking code sot-89

    Abstract: dk qw transistor dk 50 dk qw TRANSISTOR marking dk sot-89 2sc4672 marking Marking Code ES SOT-89 2SC4672 dk transistor 2SC4672G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low saturation voltage, typically VCE(SAT)=0.1V at


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    PDF 2SC4672 2SC4672 2SC4672L 2SC4672G 2SC4672-x-AB3-R 2SC4672L-x-AB3-R 2SC4672G-x-AB3-R OT-89 QW-R208-004 2SC46om dk marking code sot-89 dk qw transistor dk 50 dk qw TRANSISTOR marking dk sot-89 2sc4672 marking Marking Code ES SOT-89 dk transistor 2SC4672G

    smd transistor LY

    Abstract: smd transistor ISS smd transistor ISS 7
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


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    PDF BST120 MDA77S smd transistor LY smd transistor ISS smd transistor ISS 7

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology.


    OCR Scan
    PDF BST122