Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR SOT23 PF Search Results

    TRANSISTOR SOT23 PF Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 PF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23


    Original     		PDF FMMT491Q J-STD-020 MIL-STD-202, DS37009

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


    Original     		PDF FMMT591Q J-STD-020 DS37010

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


    Original     		PDF FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084

    PNP POWER TRANSISTOR SOT23

    Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
    Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2006E6 OT23-6 OT23-6 -70mV A/100mA ZXTP2006E6TA PNP POWER TRANSISTOR SOT23 FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6

    FMMT634

    Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100ms 100us FMMT634 IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701

    FMMTA42

    Abstract: FMMTA92 FMMTA92R pnp 200v fmmt-a
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA FMMTA42 pnp 200v fmmt-a

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA

    FMMTA20R

    Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO


    Original     		PDF FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, FMMTA20R FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C

    MMBT5401

    Abstract: No abstract text available
    Text: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching  Case: SOT23  Case material: molded plastic, “Green” molding compound


    Original     		PDF MMBT5401 MMBT5551 J-STD-020 AEC-Q101 MIL-STD-202, DS30057 MMBT5401

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms

    K1M 103

    Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
    Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 – BC858  Case material: molded plastic, “Green” molding compound


    Original     		PDF BC846A-BC848C BC856 BC858) AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 K1M 103 AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103

    FMMT593

    Abstract: FMMT493
    Text: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage


    Original     		PDF FMMT493 FMMT593 TamW250C 100MHz 10IMA 10tnA 10JmA 100mA 10IIA FMMT593 FMMT493

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 45V  Case: SOT23  IC = 800mA High Continuous Collector Current  Case Material: molded plastic, “Green” molding compound


    Original     		PDF BCW66H 800mA 300mV 100mA BCW68H J-STD-020 AEC-Q101 DS33003

    BFS17A

    Abstract: MSB003 E2p transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor

    k3b transistor

    Abstract: BC858C
    Text: BC856A-BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary NPN Types Available BC846 – BC848  Case material: molded plastic, “Green” molding compound


    Original     		PDF BC856A-BC858C BC846 BC848) AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS112072 k3b transistor BC858C

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9

    FMMT458

    Abstract: FMMT558
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms FMMT458 FMMT558

    K1p TRANSISTOR

    Abstract: No abstract text available
    Text: MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction • • Complementary PNP Type: MMBT2907A • • Ideal for Low Power Amplification and Switching Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF MMBT2222A MMBT2907A AEC-Q101 J-STD-020 MIL-STD202, DS30041 K1p TRANSISTOR

    ic 7495

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.


    Original     		PDF ZXTP25060BFH -85mV ZXTN25060BFH AEC-Q101 DS33374 ic 7495

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT493 O_ COMPLEMENTARY TYPE- FMMT593 PARTMARKING DETAIL- 493 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VALUE UNIT


    OCR Scan     		PDF FMMT493 FMMT593 250mA, 500mA, 100MHz width-300us. 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 HIGH PERFORMANCE TRANSISTOR ISSUE 3 - DECEMBER 1995 O COMPLIMENTARY T Y P E - FMMT597 PARTMARKING D ETAIL- 497 I- SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF FMMT497 FMMT597 100MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE


    OCR Scan     		PDF -i00m FMMT6517 -30mA, -50mA, lc--10mA, -20mA, -100mA, -10mA,

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 - OCTOBER 1995_ FEATURES * 400 Volt VCE0 COMPLEMENTARY T Y P E - FMMT558 PARTMARKING D ETA IL- 458 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage


    OCR Scan     		PDF FMMT458 FMMT558 300ns. t170S7fl