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    TRANSISTOR SOT23 PF Search Results

    TRANSISTOR SOT23 PF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 PF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


    Original     		FMMT591Q J-STD-020 DS37010 PDF

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


    Original     		FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084 PDF

    PNP POWER TRANSISTOR SOT23

    Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
    Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2006E6 OT23-6 OT23-6 -70mV A/100mA ZXTP2006E6TA PNP POWER TRANSISTOR SOT23 FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6 PDF

    FMMT634

    Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		FMMT634 625mW FMMT734 100mA 100ms 100us FMMT634 IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701 PDF

    FMMTA42

    Abstract: FMMTA92 FMMTA92R pnp 200v fmmt-a
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA FMMTA42 pnp 200v fmmt-a PDF

    FMMTA20R

    Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO


    Original     		FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, FMMTA20R FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C PDF

    FMMT593

    Abstract: FMMT493
    Text: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage


    Original     		FMMT493 FMMT593 TamW250C 100MHz 10IMA 10tnA 10JmA 100mA 10IIA FMMT593 FMMT493 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		BFS17A September1995 MSB003 R77/02/pp9 PDF

    ic 7495

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.


    Original     		ZXTP25060BFH -85mV ZXTN25060BFH AEC-Q101 DS33374 ic 7495 PDF

    FMMT458

    Abstract: FMMT558 ic tba 500 DSA003671
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		FMMT458 FMMT558 Vol75 100ms FMMT458 FMMT558 ic tba 500 DSA003671 PDF

    all ic data

    Abstract: 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		BC807 BC80716 BC80725 BC80740 BC817 -500mA, -50mA* -100mA, all ic data 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725 PDF

    FMMT2484

    Abstract: DSA003691 power ic 5v
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * 60 Volt VCEO FMMT2484 ✪ E C PARTMARKING DETAIL – 4G B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


    Original     		FMMT2484 140KHz 200Hz 15kHz FMMT2484 DSA003691 power ic 5v PDF

    transistor 6CZ

    Abstract: BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		BC81716 BC81725 BC81740 BC817 BC807 500mA, 100mA, transistor 6CZ BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		BCW68H BC80716 BC80725 BC80740 BC807 BC817 -500mA, -50mA* BC80716 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		BFS17 MSB003 R77/02/pp8 PDF

    BSOT-23

    Abstract: PNP POWER TRANSISTOR SOT23 FMMTA20 FMMTA70 DSA003704
    Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA70 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAIL – FMMTA70 – 2CZ COMPLIMENTARY TYPE – FMMTA20 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage


    Original     		FMMTA70 FMMTA20 -10mA, 100MHz 100KHz BSOT-23 PNP POWER TRANSISTOR SOT23 FMMTA20 FMMTA70 DSA003704 PDF

    BC848A

    Abstract: No abstract text available
    Text: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 – BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound


    Original     		BC846A-BC848C BC856 BC858 AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 BC848A PDF

    FMMT918

    Abstract: "vhf,uhf transistor" DSA003702
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR FMMT918 ISSUE 2 – JANUARY 1996 PARTMARKING DETAILS – 3B E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage


    Original     		FMMT918 100MHz 60MHz, 200MHz FMMT918 "vhf,uhf transistor" DSA003702 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT493 O_ COMPLEMENTARY TYPE- FMMT593 PARTMARKING DETAIL- 493 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VALUE UNIT


    OCR Scan     		FMMT493 FMMT593 250mA, 500mA, 100MHz width-300us. 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE


    OCR Scan     		-i00m FMMT6517 -30mA, -50mA, lc--10mA, -20mA, -100mA, -10mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 - OCTOBER 1995_ FEATURES * 400 Volt VCE0 COMPLEMENTARY T Y P E - FMMT558 PARTMARKING D ETA IL- 458 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage


    OCR Scan     		FMMT458 FMMT558 300ns. t170S7fl PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996_ PARTMARKING D E T A ILS - 3B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V VALUE UNIT cbo 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage


    OCR Scan     		lc-10mA, 100MHz 60MHz, 200MHz Width-300ns. PDF

    transistor c 3181

    Abstract: ML SOT23 TRANSISTOR 3182
    Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage


    OCR Scan     		650MHz 500MHz FMMTH10 100MHz 500MHz, 300ns. transistor c 3181 ML SOT23 TRANSISTOR 3182 PDF