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    TRANSISTOR SOT23 J8 Search Results

    TRANSISTOR SOT23 J8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 J8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


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    PDF STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


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    PDF STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor

    transistor SOT23 J8

    Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23


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    PDF S9018 200mW) OT-23 BL/SSSTC085 transistor SOT23 J8 transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23

    CA6V

    Abstract: audio taper potentiometer 100k cts capacitor 470uf 25v 470uF/ 25V capacitor 10K CA6V CR0805-10W-1001FT C144 DIGITAL NPN TRANSISTOR AKM4114 transistor SOT23 PJ6 AFM2
    Text: Freescale Semiconductor Users Guide DSPAUDIOEVM Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. DSPAUDIOEVMUG


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    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    CA6V

    Abstract: transistor SOT23 PJ6 AFM2 capacitor 470uf 25v 10K CA6V MOTOROLA DSP563XX architecture 5075BR subwoofer motherboard CR0805 DSPAUDIOEVMMB1
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSPAUDIOEVM Evaluation Board User’s Manual Order Number: DSPAUDEVMEBUM/D Revision 1, January 2003 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.


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    PR212

    Abstract: TLC7705 TPS64203 pMOS transistor
    Text: XILINXPWR-079 HPA-079 TPS64203 Switching DC/DC Controller-Based Power Management Solution for Spartan -3 Providing up to 3 A from VIN = 5.0 V or 3.3 V SUPPORTS : - Spartan™-3 – supports PR213 at the following link: http://wwws.ti.com/sc/techlit/slva174.pdf


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    PDF XILINXPWR-079 HPA-079) TPS64203 PR213 com/sc/techlit/slva174 PR211 com/sc/techlit/slva172 PR212 com/sc/techlit/slva173 OT-23 TLC7705 pMOS transistor

    MARKING CODE j8

    Abstract: transistor SOT23 J8 sot-23 MARKING CODE 21 MMS9018
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9018 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V


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    PDF MMS9018 OT-23 -55OC OT-23 100mAdc, 400MHz) MARKING CODE j8 transistor SOT23 J8 sot-23 MARKING CODE 21 MMS9018

    MARKING CODE j8

    Abstract: transistor SOT23 J8 MMS9018
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9018 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.05A


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    PDF MMS9018 OT-23 -55OC OT-23 100mAdc, 400MHz) MARKING CODE j8 transistor SOT23 J8 MMS9018

    transistor SOT23 J8

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9018 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.05A


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    PDF MMS9018 OT-23 -55OC OT-23 100uAdc, 20Vdc, 15Vdc, transistor SOT23 J8

    transistor C143

    Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
    Text: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999


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    PDF ElanSC520 000MHz 768kHz 333MHz 318MHz ECSMA-25 ECSMA-24 ECPSM29T-32 transistor C143 C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231

    TRANSISTOR R57

    Abstract: la 7630 MAX3738 MAX3738EVKIT TP10 10uH inductor led and photodiode pair DN306P R43-R47 FDN306
    Text: 19-3193; Rev 0, 2/04 MAX3738 Evaluation Kit _ Features The MAX3738 evaluation kit EV kit is an assembled demonstration board that provides complete optical and electrical evaluation of the MAX3738. Fully Assembled and Tested The EV kit is composed of two independent sections, one


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    PDF MAX3738 MAX3738. MAX3738 TRANSISTOR R57 la 7630 MAX3738EVKIT TP10 10uH inductor led and photodiode pair DN306P R43-R47 FDN306

    CHT846BGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT846BGP SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 65 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20)


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    PDF CHT846BGP OT-23 OT-23) fig10 fig11 CHT846BGP

    BLM18GA601SN1

    Abstract: P698-2CC R68 resistor DN306P sb6 sot23 1008ls la 7630 TRANSISTOR R57 MAX3646EVKIT TP10
    Text: 19-3194; Rev 0, 2/04 MAX3646 Evaluation Kit _ Features The MAX3646 evaluation kit EV kit is an assembled demonstration board that provides complete optical and electrical evaluation of the MAX3646. Fully Assembled and Tested The EV kit is composed of two independent sections, one


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    PDF MAX3646 MAX3646. MAX3646 BLM18GA601SN1 P698-2CC R68 resistor DN306P sb6 sot23 1008ls la 7630 TRANSISTOR R57 MAX3646EVKIT TP10

    marking J8

    Abstract: BF600 MMS9018
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9018 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS9018 OT-23 -55OC OT-23 marking J8 BF600 MMS9018

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMS9018-L MMS9018-H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMS9018-L MMS9018-H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23 100uAdc,

    CAP0603

    Abstract: cap3528 CAP-0603 CON-SIp-4P HC49 smd 1N4148 0603 sot23-5 LDO Regulator Controller SIP-4P hc49/smd transistor My sot23 CON-SIP-14P
    Text: Item 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Qty 2 6 1 1 1 2 5 9 4 1 2 1 1 2 8 1 6 1 1 2 1 1 1 1 1 6 3 1 1 1 2 1 1 1 2 3 1 9 1 1 5 1 1 3 2 1 1 1 Value 33pF 100nF


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    PDF 100nF 470pF 10MHz 24MHz 32kHz C32-C34 C9-C12 C13-C20 D5-D12 J16-J17 CAP0603 cap3528 CAP-0603 CON-SIp-4P HC49 smd 1N4148 0603 sot23-5 LDO Regulator Controller SIP-4P hc49/smd transistor My sot23 CON-SIP-14P

    transistor SOT23 J8

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


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    PDF OT-23 S9018LT1 OT-23 S9018LT1= 400MHz transistor SOT23 J8

    transistor SOT23 J8

    Abstract: transistor j8 S9018LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage


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    PDF OT-23 S9018LT1 OT-23 S9018LT1= 400MHz transistor SOT23 J8 transistor j8 S9018LT1

    bfr106

    Abstract: No abstract text available
    Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23


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    PDF D02S20D BFR106 bfr106

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


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    PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


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    PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23