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    TRANSISTOR SMD W 04 Search Results

    TRANSISTOR SMD W 04 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD W 04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    l14 254

    Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
    Text: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The


    Original     		PDF BLV904 AN98019 BLV904 BLV904. OT409. SCA57 l14 254 AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026

    transistor SMD p12

    Abstract: SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd NCP1252 CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ
    Text: TN1252 NCP1252 Boost and CAT4026 LED Driver Board 2010-October-04 TECHNICAL NOTE Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package. No licenses to ON Semiconductor’s or any third party’s Intellectual Property is conveyed by the transfer of this


    Original     		PDF TN1252 NCP1252 CAT4026 2010-October-04 TN4026/D transistor SMD p12 SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ

    transistor bd139

    Abstract: bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor


    Original     		PDF BLV859 SC08a OT262B BLV859 SCA51 127041/1200/02/pp16 transistor bd139 bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139

    bvc62

    Abstract: philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES


    Original     		PDF BLV859 OT262B BLV859 SCA51 127041/1200/02/pp16 bvc62 philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139

    smd transistor 805 239

    Abstract: SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B


    Original     		PDF BLV857 OT324B SCA53 127067/0/02/pp12 smd transistor 805 239 SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857

    TRANSISTOR SMD MARKING CODE 3d

    Abstract: MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 2002 Feb 04 2003 Apr 09 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858


    Original     		PDF M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC856 BC856A BC856B TRANSISTOR SMD MARKING CODE 3d MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs

    BLL6H0514-25

    Abstract: No abstract text available
    Text: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.


    Original     		PDF BLL6H0514-25 BLL6H0514-25

    Untitled

    Abstract: No abstract text available
    Text: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.


    Original     		PDF BLL6H0514-25 BLL6H0514-25 771-BLL6H0514-25112

    6r600e6

    Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6


    Original     		PDF IPx60R600E6 IPD60R600E6, IPP60R600E6 IPD60R600E6 6r600e6 infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19

    6R600E6

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6


    Original     		PDF IPx60R600E6 IPD60R600E6, IPP60R600E6 IPA60R600E6 6R600E6

    6R600E6

    Abstract: diode smd E6 to252 footprint wave soldering infineon marking TO-252 IPA60R600E6 IPD60R600E6 JESD22 marking code ll SMD Transistor Diode SMD SJ 19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6


    Original     		PDF IPx60R600E6 IPD60R600E6, IPP60R600E6 IPD60R600E6 6R600E6 diode smd E6 to252 footprint wave soldering infineon marking TO-252 IPA60R600E6 IPD60R600E6 JESD22 marking code ll SMD Transistor Diode SMD SJ 19

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet 2010-04-12 Rev. 2.0, 2.1, 2013-07-31 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6


    Original     		PDF IPx60R600E6 IPD60R600E6, IPP60R600E6 IPA60R600E6

    65E6280

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6


    Original     		PDF IPx65R280E6 IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 65E6280

    65E6280

    Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6


    Original     		PDF IPx65R280E6 IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 65E6280 to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipw65r ipa65r

    Untitled

    Abstract: No abstract text available
    Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.


    Original     		PDF BLA6H0912-500 BLA6H0912-500

    EL series SMD transistor

    Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description


    Original     		PDF IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299

    SMD TRANSISTOR MARKING 9b

    Abstract: SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE 42 SMD TRANSISTOR MARKING 9B NPN SMD TRANSISTOR MARKING 76 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification PNP BISS transistor PMMT591A FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D088 PMMT591A PMMT491A. PMMT591A SMD TRANSISTOR MARKING 9b SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE 42 SMD TRANSISTOR MARKING 9B NPN SMD TRANSISTOR MARKING 76 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP

    TRANSISTOR SMD MARKING CODE 9A

    Abstract: smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D088 PMMT491A PMMT591A. PMMT491A TRANSISTOR SMD MARKING CODE 9A smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic

    6r385P

    Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description


    Original     		PDF IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199

    Untitled

    Abstract: No abstract text available
    Text: TLE 4267-2 5-V Low Drop Voltage Regulator Data Sheet Rev. 1.0, 2012-04-03 Automotive Power 5-V Low Drop Voltage Regulator TLE 4267-2 Features • • • • • • • • • • • • • • • • • Output voltage tolerance ≤ ±2% 400 mA output current capability


    Original     		PDF

    Transistor R25 smd

    Abstract: R25 SMD transistor Transistor R25 murata thermistor PRF18BA103QB1RB PRF21BD471QB1RA Thermistor cross reference Thermistor 100,000 cycle TRANSISTOR SMD CODE 15 SMD TRANSISTOR
    Text: CPTC Thermistor： ：TPM Type SMD CPTC Thermistor for Temperature Sensing Features 1. RoHS compliant 2. Thermistor chip with lead-free tinned terminals 3. EIA size 0402,0603,0805 4. Fast and reliable response 5. Suitable for reflow soldering 6. Agency Recognition: UL & cUL


    Original     		PDF TPM1S103P130R PRF18BA103QB1RB TPM1S473P130R PRF18BA473QB1RB TPM2S471P065R B59701A0070A062 TPM2S471P075R TPM2S471P085R PRF21BE471QB1RA B59701A0090A062 Transistor R25 smd R25 SMD transistor Transistor R25 murata thermistor PRF18BA103QB1RB PRF21BD471QB1RA Thermistor cross reference Thermistor 100,000 cycle TRANSISTOR SMD CODE 15 SMD TRANSISTOR

    TRANSISTOR SMD L3

    Abstract: BLV909
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product specification Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product specification UHF power transistor BLV909 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum temperature


    Original     		PDF M3D175 BLV909 OT409B 125002/03/pp16 TRANSISTOR SMD L3 BLV909

    PRF18BA103QB1RB

    Abstract: PRF21BD471QB1RA B59601A0115A062 PRF21BA471QB1RA TS-0402 B59701A0130A062 PRF15BB471QB1RC PRF15BC471QB1RC smd CODE L4 R25 SMD transistor
    Text: CPTC Thermistor： ：TPM Type SMD CPTC Thermistor for Temperature Sensing Features 1. RoHS compliant 2. Thermistor chip with lead-free tinned terminals 3. EIA size 0402,0603,0805 4. Fast and reliable response 5. Suitable for reflow soldering 6. Agency Recognition: UL & cUL


    Original     		PDF TPM1S103P130R PRF18BA103QB1RB TPM1S473P130R PRF18BA473QB1RB TPM2S471P065R B59701A0070A062 TPM2S471P075R TPM2S471P085R PRF21BE471QB1RA B59701A0090A062 PRF18BA103QB1RB PRF21BD471QB1RA B59601A0115A062 PRF21BA471QB1RA TS-0402 B59701A0130A062 PRF15BB471QB1RC PRF15BC471QB1RC smd CODE L4 R25 SMD transistor