PBSS4350D
Abstract: PBSS5350D
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
PBSS4350D
PBSS5350D
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
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PMN42XPEA
Abstract: No abstract text available
Text: SO T4 57 PMN42XPEA 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN42XPEA
OT457
SC-74)
AEC-Q101
PMN42XPEA
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Untitled
Abstract: No abstract text available
Text: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKT
OT416
SC-75)
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PMN27XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN27XPEA
OT457
SC-74)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PMN40UPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN40UPEA
OT457
SC-74)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PMN70XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN70XPEA
OT457
SC-74)
AEC-Q101
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BCX18R
Abstract: transistor SMD t4 SMD TRANSISTOR MARKING 28 TRANSISTOR T4 BCX17R
Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BCX17R BCX18R SOT-23 Formed SMD Package MARKING BCX17R = T4 BCX18R = T5 ABSOLUTE MAXIMUM RATINGS Ta = 25ºC unless specified otherwise
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BCX17R
BCX18R
OT-23
C-120
BCX17R
Rev160103E
BCX18R
transistor SMD t4
SMD TRANSISTOR MARKING 28
TRANSISTOR T4
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nxp 544
Abstract: FET marking codes
Text: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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PMR280UN
nxp 544
FET marking codes
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FET marking codes
Abstract: No abstract text available
Text: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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PMR400UN
FET marking codes
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transistor smd code marking nc
Abstract: No abstract text available
Text: SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN27UP
OT457
SC-74)
transistor smd code marking nc
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PMN35EN 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 — 20 July 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN35EN
OT457
SC-74)
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Untitled
Abstract: No abstract text available
Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS84AKT
OT416
SC-75)
AEC-Q101
771-BSS84AKT115
BSS84AKT
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Untitled
Abstract: No abstract text available
Text: SO T4 16 NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3008NBKT
OT416
SC-75)
AEC-Q101
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5s103
Abstract: No abstract text available
Text: SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN80XP
OT457
SC-74)
5s103
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SC-75
Abstract: No abstract text available
Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS84AKT
OT416
SC-75)
AEC-Q101
SC-75
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smd code marking ID
Abstract: NXP SMD DIODE MARKING CODE T4 NX3008PBKT
Text: SO T4 16 NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3008PBKT
OT416
SC-75)
AEC-Q101
smd code marking ID
NXP SMD DIODE MARKING CODE T4
NX3008PBKT
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Untitled
Abstract: No abstract text available
Text: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMR670UPE
OT416
SC-75)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS84AKT
OT416
SC-75)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PMN22XN 30 V, single N-channel Trench MOSFET Rev. 1 — 19 January 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN22XN
OT457
SC-74)
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zy smd transistor
Abstract: transistor smd zy transistor SMD marking ZY NXP SMD mosfet MARKING CODE pmn34up TRANSISTOR SMD MARKING CODE zy SMD mosfet MARKING code T
Text: SO T4 57 PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN34UP
OT457
SC-74)
zy smd transistor
transistor smd zy
transistor SMD marking ZY
NXP SMD mosfet MARKING CODE
pmn34up
TRANSISTOR SMD MARKING CODE zy
SMD mosfet MARKING code T
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Untitled
Abstract: No abstract text available
Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.
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002b0D3
PZT3904
OT-223)
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1N916
Abstract: PZT3904 smd transistor 3t
Text: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.
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002b003
PZT3904
OT-223)
1N916^
1N916(
7Z74968
1N916
PZT3904
smd transistor 3t
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