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    TRANSISTOR SMD QE Search Results

    TRANSISTOR SMD QE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD QE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    VARACTOR diode POINT color code table

    Abstract: smd transistor w20 tunnel diode General Electric smd diode M2 circuit diagram of luminous metal detector IEC747-5 Telefunken diode color code photo thyristor tunnel diode GaAs germanium diode smd
    Text: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20 Function


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    VARACTOR diode POINT color code table

    Abstract: smd transistor w20 tunnel diode General Electric germanium photodiode PIN IEC747-5 circuit diagram of luminous metal detector GaAs tunnel diode photodiode germanium tunnel diode GaAs germanium diode smd
    Text: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20


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    Untitled

    Abstract: No abstract text available
    Text: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA


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    PDF PZT3906 OT-223) 25rom

    smd transistor JJ

    Abstract: t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14
    Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.


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    PDF BLT14 OT96-1 MAM227 711062b OT96-1. smd transistor JJ t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14

    Untitled

    Abstract: No abstract text available
    Text: PMBT5088 _/ v_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small signal transistor in plastic SOT-23 package intended fo r low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA Collector-emitter voltage open base


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    PDF PMBT5088 OT-23 OT-23.

    Untitled

    Abstract: No abstract text available
    Text: • t.tS3^31 DDEbOOb fifl3 N AUER PHILIPS/DISCRETE APX PZT3906 b?E ]> J V. SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed primarily fo r high-speed, saturated switching applications in industrial service.


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    PDF PZT3906 OT-223)

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.


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    PDF 002b0D3 PZT3904 OT-223)

    smd code HF transistor

    Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
    Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.


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    PDF 71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN

    smd transistor pnp 591

    Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile


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    PDF BLV857 OT324B smd transistor pnp 591 smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor

    bf TRANSISTOR smd

    Abstract: transistor smd bf smd transistor B4 SMD sizeF
    Text: UNCONTROLLED DOCUMENT SCiO.50 PART NUMBER REV. QED-ST2832SRC12Q PRELIM INARY IN P / N DIR 2 ,5 0 [0 ,0 9 8 ] MAX, 8,00 [0 ,3 1 5 ] Ik NOTES: 1. RED ANODE; 26 AWG STRANDED RED INSULATION. 25 ,40 [1,000] <2 PLS,> 2, COLLECTOR: 26 AWG STRANDED RED INSULATION,


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    PDF QED-ST2832SRC120 SML-LX2832SRC/B-TR. 0ED-ST2832C120-TR. PRECI90N ST2832SRC120 ASSEC120 bf TRANSISTOR smd transistor smd bf smd transistor B4 SMD sizeF

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


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    PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p

    SMD Transistor 1c

    Abstract: No abstract text available
    Text: SIEMENS Low-Drop Voltage Regulator TLE 4274 Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use In automotive electronics Type Ordering Code


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    PDF Q67000-A9258 P-T0220-3-1 Q67000-A9257 Q67000-A9256 Q67006-A9331 P-T0252-3-1 Q67006-A9261 P-T0263-3-1 SMD Transistor 1c

    transistor smd 747

    Abstract: smd transistor 203 BLV902 726 POWER TRANSISTOR
    Text: Philips Semiconductors Preliminary specification UHF power transistor BLV902 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum temperature profile ♦ Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.


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    PDF BLV902 OT409B 7110A2b transistor smd 747 smd transistor 203 BLV902 726 POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: ACS138MS Semiconductor Radiation Hardened 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs


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    PDF ACS138MS MIL-PRF-38535 ACS138MS 25Micron 2390nm 2390nm 525nm ACS138M

    smd 7BA

    Abstract: BLV902 1.B smd transistor
    Text: Philips Semiconductors Preliminary specification UHF power transistor BLV902 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum temperature profile • Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.


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    PDF BLV902 OT409B 711062b 0CmM77 smd 7BA BLV902 1.B smd transistor

    43 JO smd

    Abstract: 1c smd transistor transistor bd135 chip PCN resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and


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    PDF MRF6402 MRF6402 1N4148 BD135 43 JO smd 1c smd transistor transistor bd135 chip PCN resistor

    C1429-2

    Abstract: smd transistor ISS
    Text: T EMIC BUD725D S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode • Very low switching losses • • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology


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    PDF BUD725D BUD725D D-74025 17-Oct-97 C1429-2 smd transistor ISS

    Untitled

    Abstract: No abstract text available
    Text: TD13004D TD13005D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor • Very short switching times Features Very low switching losses • Very low dynamic saturation • Very low operating temperature • High reverse voltage • •


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    PDF TD13004D TD13005D TD13005D 20-Jan-99

    TBB204G

    Abstract: TBB 204 TBB204 colpitts oscillator 400 MHz NEOSID 220 TBB 200 G 3VF8 SMD KRP 8 PIN SMD IC L02
    Text: S IEM EN S Mixer / Oscillator TBB 204 G Bipolar 1C Features • Low noise • Low spurious signal content good suppression of input signal/output signal • High conversion gain • High isolated RF, IF, LO-parts • W ide range of supply voltage (down to 3 V)


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    PDF A235b05 A235b05 TBB204G TBB 204 TBB204 colpitts oscillator 400 MHz NEOSID 220 TBB 200 G 3VF8 SMD KRP 8 PIN SMD IC L02

    907 TRANSISTOR smd

    Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
    Text: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in


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    PDF BFQ149 MSB013 907 TRANSISTOR smd smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526

    Untitled

    Abstract: No abstract text available
    Text: ACTS138MS Semiconductor Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACTS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three TTL level binary


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    PDF ACTS138MS MIL-PRF-38535 ACTS138MS 25Micron 2390nm 2390nm 525nm ACTS138M

    BLV2045

    Abstract: smd TRANSISTOR F2 629 08223
    Text: Philips Semiconductors Product specification UHF power transistor BLV2045 FEATURES PINNING - SOT39QA • E m itter ballasting resistors fo r optim um tem perature profile PIN • Gold m etallization ensures excellent reliability • Internal input and output m atching to achieve high


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    PDF BLV2045 OT390A MGD255 OT39QA. BLV2045 smd TRANSISTOR F2 629 08223