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    TRANSISTOR SMD MARKING CODE PB Search Results

    TRANSISTOR SMD MARKING CODE PB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD MARKING CODE PB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3515MB OT883B PBSS2515MB. AEC-Q101

    MLE20

    Abstract: biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC
    Text: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3540MB OT883B PBSS2540MB. AEC-Q101 MLE20 biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC

    BISS 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2515MB OT883B PBSS3515MB. AEC-Q101 BISS 0001

    MARKING CODE SMD IC

    Abstract: biss 0001 BATTERY CHARGER cutoff
    Text: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3515MB OT883B PBSS2515MB. AEC-Q101 MARKING CODE SMD IC biss 0001 BATTERY CHARGER cutoff

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3540MB OT883B PBSS2540MB. AEC-Q101

    biss 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2515MB OT883B PBSS3515MB. AEC-Q101 biss 0001

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


    Original     		PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1

    TRANSISTOR SMD MARKING CODE w6

    Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
    Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8115T O-236AB) PBHV9115T. AEC-Q101 PBHV8115T TRANSISTOR SMD MARKING CODE w6 SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC

    smd code marking HD SOT23

    Abstract: No abstract text available
    Text: SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat BISS transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits


    Original     		PDF PBSS5130T AEC-Q101 smd code marking HD SOT23

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    MARKING CODE SMD IC

    Abstract: PBHV8115Z PBHV9115Z SC-73 TRANSISTOR SMD MARKING CODE 210 transistor smd code marking 101
    Text: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8115Z OT223 SC-73) PBHV9115Z. AEC-Q101 PBHV8115Z MARKING CODE SMD IC PBHV9115Z SC-73 TRANSISTOR SMD MARKING CODE 210 transistor smd code marking 101

    Untitled

    Abstract: No abstract text available
    Text: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8140Z OT223 SC-73) PBHV9540Z. AEC-Q101 PBHV8140Z

    Untitled

    Abstract: No abstract text available
    Text: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9540Z OT223 SC-73) PBHV8140Z. AEC-Q101 PBHV9540Z

    PBHV9215Z,115

    Abstract: No abstract text available
    Text: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9215Z OT223 SC-73) PBHV8215Z. AEC-Q101 PBHV9215Z PBHV9215Z,115

    V8215Z

    Abstract: SC-73 MARKING CODE SMD IC PBHV8215Z 170KW
    Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8215Z OT223 SC-73) PBHV9215Z. AEC-Q101 PBHV8215Z V8215Z SC-73 MARKING CODE SMD IC 170KW

    PBHV9540Z

    Abstract: PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC
    Text: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9540Z OT223 SC-73) PBHV8140Z. AEC-Q101 PBHV9540Z PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC

    TRANSISTOR SMD MARKING CODE 108

    Abstract: PBHV9215Z V9215Z SC-73 transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 transistor smd code marking 101 TRANSISTOR SMD MARKING CODE 72
    Text: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9215Z OT223 SC-73) PBHV8215Z. AEC-Q101 PBHV9215Z TRANSISTOR SMD MARKING CODE 108 V9215Z SC-73 transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 transistor smd code marking 101 TRANSISTOR SMD MARKING CODE 72

    Untitled

    Abstract: No abstract text available
    Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8215Z OT223 SC-73) PBHV9215Z. AEC-Q101 PBHV8215Z

    NXP date code marking SOT89

    Abstract: No abstract text available
    Text: SO T8 9 PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8115X SC-62) PBHV9115X. AEC-Q101 NXP date code marking SOT89

    Untitled

    Abstract: No abstract text available
    Text: PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8118T O-236AB) AEC-Q101

    PBHV9050Z NXP

    Abstract: V9050Z SC-73
    Text: PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat BISS transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9050Z OT223 SC-73) AEC-Q101 PBHV9050Z NXP V9050Z SC-73

    Untitled

    Abstract: No abstract text available
    Text: PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat BISS transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9050Z OT223 SC-73) AEC-Q101