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    TRANSISTOR SMD 6A Search Results

    TRANSISTOR SMD 6A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 6A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MARKING SMD PNP TRANSISTOR 2a

    Abstract: MARKING SMD pnp TRANSISTOR 790 vce 24 icm 1a SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR TRANSISTOR SMD 1a 9 TRANSISTOR SMD PNP 1A FCX790A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF FCX790A -50mA -10mA -10mA -500mA -50mA, 50MHz -500mA, MARKING SMD PNP TRANSISTOR 2a MARKING SMD pnp TRANSISTOR 790 vce 24 icm 1a SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR TRANSISTOR SMD 1a 9 TRANSISTOR SMD PNP 1A FCX790A

    MARKING SMD npn TRANSISTOR 1a

    Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF FCX690B 100mA 50MHz 500mA, MARKING SMD npn TRANSISTOR 1a smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A

    smd marking 619

    Abstract: npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.


    Original     		PDF FCX619 100mA 200mA 100MHz smd marking 619 npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor

    KZT2955

    Abstract: CZT2955
    Text: Transistors IC SMD Type 2.0W Surface Mount Complementary PNP Silicon Power Transistor KZT2955 CZT2955 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).


    Original     		PDF KZT2955 CZT2955) OT-223 -30mA -30mA -100V 400mA 500mA; KZT2955 CZT2955

    CZT3055

    Abstract: 30ma 40v npn KZT3055
    Text: Transistors IC SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055 CZT3055 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).


    Original     		PDF KZT3055 CZT3055) OT-223 400mA 500mA; CZT3055 30ma 40v npn

    smd transistor 718

    Abstract: MARKING SMD PNP TRANSISTOR 718 MARKING SMD PNP TRANSISTOR 2a FCX718 transistor smd 6a 6a smd transistor MARKING SMD PNP TRANSISTOR smd 6a transistor
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.


    Original     		PDF FCX718 -50mA -200mA -10mA -50mA, 100MHz smd transistor 718 MARKING SMD PNP TRANSISTOR 718 MARKING SMD PNP TRANSISTOR 2a FCX718 transistor smd 6a 6a smd transistor MARKING SMD PNP TRANSISTOR smd 6a transistor

    Untitled

    Abstract: No abstract text available
    Text: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO


    Original     		PDF BCU86-SMD BCU87-SMD BCU86 BCU87 100mA

    fast switching pnp transistor 3A 60V

    Abstract: magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD
    Text: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO


    Original     		PDF BCU86-SMD BCU87-SMD BCU86 BCU87 fast switching pnp transistor 3A 60V magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD

    MARKING SMD PNP TRANSISTOR 2a

    Abstract: SMD 8A TRANSISTOR SMD TRANSISTOR MARKING 2A TRANSISTOR SMD PNP 1A SMD BR TRANSISTOR SMD 1a 9 MARKING SMD PNP TRANSISTOR 1a MARKING SMD PNP TRANSISTOR FCX789A smd ic marking 1A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF FCX789A -100mA -10mA -10mA -50mA, 50MHz -500mA, -50mA MARKING SMD PNP TRANSISTOR 2a SMD 8A TRANSISTOR SMD TRANSISTOR MARKING 2A TRANSISTOR SMD PNP 1A SMD BR TRANSISTOR SMD 1a 9 MARKING SMD PNP TRANSISTOR 1a MARKING SMD PNP TRANSISTOR FCX789A smd ic marking 1A

    SMD TRANSISTOR MARKING 6C

    Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
    Text: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA


    Original     		PDF BC817W BC817-25W BC817-40W BC817-16W SMD TRANSISTOR MARKING 6C smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b

    SMD 8A TRANSISTOR

    Abstract: smd transistor 8A transistor SMD 8A diode 60V 8A 2SJ302
    Text: MOSFET SMD Type Mos Field Effect Power Transistor 2SJ302 TO-263 +0.1 1.27-0.1 RDS on 0.24 (VGS=-4V,ID=-6A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss Ciss=1200PF TYP. 5.60 (VGS=-10V,ID=-8A) +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on) 0.1 +0.2 8.7-0.2


    Original     		PDF 2SJ302 O-263 1200PF SMD 8A TRANSISTOR smd transistor 8A transistor SMD 8A diode 60V 8A 2SJ302

    transistor smd 6a

    Abstract: fzt749 transistor marking 6A transistor FZT749 6a smd transistor
    Text: Transistors SMD Type NPN Silicon Planar Medium Power Transistor FZT749 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 Low saturation voltage. +0.15 1.65-0.15 Features +0.2 0.90-0.2


    Original     		PDF FZT749 OT-223 -100mA -50mA, -100mA, 100MHz -500mA, -50mA transistor smd 6a fzt749 transistor marking 6A transistor FZT749 6a smd transistor

    FZT788B

    Abstract: MARKING SMD PNP TRANSISTOR 2a TRANSISTOR SMD 1a 9 smd ic marking 1A
    Text: Transistors SMD Type PNP Silicon Planar Medium Power High Gain Transistor FZT788B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low equivalent on-resistance; RCE sat 93mÙ at 3A. +0.1 3.00-0.1 Gain of 300 at IC=2 Amps and Very low saturation voltage. +0.15


    Original     		PDF FZT788B OT-223 -10mA -50mA, 50MHz -500mA, -50mA FZT788B MARKING SMD PNP TRANSISTOR 2a TRANSISTOR SMD 1a 9 smd ic marking 1A

    FZT853

    Abstract: npn smd 2a smd transistor 2A 6a smd transistor
    Text: Transistors SMD Type NPN Silicon Planar High Current Transistor FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3


    Original     		PDF FZT853 OT-223 300mA* 100mA, 50MHz 100mA FZT853 npn smd 2a smd transistor 2A 6a smd transistor

    FZT949

    Abstract: smd transistor 2A 1V100
    Text: Transistors SMD Type PNP Silicon Planar High Current High Performance Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current.


    Original     		PDF FZT949 OT-223 -400mA* -250mA* -500mA -10mA, -100mA, 50MHz -400mA FZT949 smd transistor 2A 1V100

    npn smd 2a

    Abstract: smd transistor 2A FZT789A smd ic marking 1A
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT789A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low equivalent on-resistance; RCE sat 93mÙ at 3A. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3


    Original     		PDF FZT789A OT-223 -20mA -100mA -10mA -10mA, -50mA, 50MHz -500mA, -50mA npn smd 2a smd transistor 2A FZT789A smd ic marking 1A

    transistor smd 6a

    Abstract: 6a smd transistor smd transistor 2A smd transistor marking br TRANSISTOR SMD 1a 9 FZT649
    Text: Transistors SMD Type NPN Silicon Planar High Performance Transistor FZT649 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage.


    Original     		PDF FZT649 OT-223 100mA 300mA 100mA, 100MHz 500mA transistor smd 6a 6a smd transistor smd transistor 2A smd transistor marking br TRANSISTOR SMD 1a 9 FZT649

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Planar High Current High Performance Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current.


    Original     		PDF FZT949 OT-223 -400mA* -250mA* -500mA -10mA, -100mA, 50MHz -400mA

    smd transistor 718

    Abstract: FMMT718 TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23
    Text: Transistors IC SMD Type Switching Transistor FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current.


    Original     		PDF FMMT718 OT-23 625mW -50mA -10mA, -50mA 100MHz -20mA smd transistor 718 FMMT718 TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23

    smd transistor MARKING 2A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1


    Original     		PDF FMMT619 OT-23 625mw 200mA 100MHz smd transistor MARKING 2A

    SMD 3B

    Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
    Text: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)


    Original     		PDF KPCF8402 SMD 3B smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor

    w342

    Abstract: SDC09
    Text: Surface-mount Power Transistor Array SDC09 External Dimensions SMD-16A 0.89±0.15 0.25 2.54±0.25 +0.15 0.75 –0.05 16 V V mJ 9 a 6.8max ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max


    Original     		PDF SDC09 10max 15max 80min SMD-16A w342 SDC09