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    TRANSISTOR SMD 303 Search Results

    TRANSISTOR SMD 303 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB350UPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB350UPE DFN1010D-3 OT1215)

    14N03L

    Abstract: 14N03LA 14N03
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original     		PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03LA 14N03

    13n03la

    Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
    Text: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level


    Original     		PDF IPD13N03LA IPU13N03LA P-TO252-3-11 P-TO251-3-21 Q67042-S4159 13N03LA 13n03la 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22

    14N03L

    Abstract: 14N03
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original     		PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03

    67a smd

    Abstract: 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on max. SMD version 6.8 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6015 2N08L07 P-TO263-3-2 67a smd 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a

    14N03LA

    Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB14N03LA PG-TO263-3-2 14N03LA 14N03LA 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 JESD22

    IPB14N03LA

    Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB14N03LA PG-TO263-3-2 Q67042-S4156 14N03LA 14N03 14N03LA smd code D24 SMD CODE d20

    y1 smd transistor

    Abstract: transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd
    Text: Lighting Ballast - European Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4


    Original     		PDF O-252 BUF644 100-kHz O-220 BUF654 BUF742-S-069 y1 smd transistor transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd

    transistor SMD Y1

    Abstract: smd transistor Y1 sot-23
    Text: Lighting Ballast - American Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4


    Original     		PDF BUF644 100-kHz O-220 BUF654 BUF742-S-069 O-252 transistor SMD Y1 smd transistor Y1 sot-23

    transistor smd R11

    Abstract: TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23
    Text: NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB High Intensity LED Drivers Using NCP3065/NCV3065 Evaluation Board User's Manual Introduction http://onsemi.com EVAL BOARD USER’S MANUAL High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light


    Original     		PDF NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB NCP3065/NCV3065 EVBUM2155/D transistor smd R11 TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23

    5962R9581301QXC

    Abstract: 5962R9581301VXC 95813 CDFP3-F14 smd transistor s3 5962R9581301QCC 5962R9581301VCC HI-303 HS1-303RH HS-303RH
    Text: HS-303RH TM Data Sheet November 2001 Radiation Hardened CMOS Dual SPDT Analog Switch • QML, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose γ 1 x 105 RAD(Si) • No Latch-Up, Dielectrically Isolated Device Islands • Pin for Pin Compatible with Intersil HI-303 Series Analog


    Original     		PDF HS-303RH MIL-PRF-38535 HS-303RH 5962R9581301QXC 5962R9581301VXC 95813 CDFP3-F14 smd transistor s3 5962R9581301QCC 5962R9581301VCC HI-303 HS1-303RH

    smd transistor Q5

    Abstract: SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc
    Text: AND8298 High Intensity LED Drivers Using NCP3065/NCV3065 Prepared by: Petr Konvicny ON Semiconductor http://onsemi.com Introduction High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light sources. Improvements in high brightness LEDs present the


    Original     		PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor Q5 SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc

    d3 017 smd 6 pin

    Abstract: 95813 5962R9581301TCC 5962R9581304TXC HI-303 HS1-303RH-T HS-303RH-T HS9-303RH-T
    Text: HS-303RH-T Data Sheet July 1999 Radiation Hardened CMOS Dual SPDT Analog Switch • QML Class T, Per MIL-PRF-38535 The HS-303RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free


    Original     		PDF HS-303RH-T MIL-PRF-38535 100kRAD HS-303RH-T d3 017 smd 6 pin 95813 5962R9581301TCC 5962R9581304TXC HI-303 HS1-303RH-T HS9-303RH-T

    95813

    Abstract: 5962R9581301TCC 5962R9581301TXC HI-303 HS1-303RH-T HS-303RH-T HS9-303RH-T HS1-303RH CDFP3-F14
    Text: HS-303RH-T TM Data Sheet November 2001 Radiation Hardened CMOS Dual SPDT Analog Switch • QML Class T, Per MIL-PRF-38535 The HS-303RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free


    Original     		PDF HS-303RH-T MIL-PRF-38535 100kRAD HS-303RH-T 95813 5962R9581301TCC 5962R9581301TXC HI-303 HS1-303RH-T HS9-303RH-T HS1-303RH CDFP3-F14

    5962F9581304VXC

    Abstract: 5962F9581304QXC smd transistor s3 HI-303 HS-303ARH HS-303RH 60MeV-mg 3d1431 5962F9581304VCC
    Text: HS-303ARH Data Sheet December 14, 2006 Radiation Hardened CMOS Dual SPDT Analog Switch Features • QML, Per MIL-PRF-38535 The HS-303ARH analog switch is a monolithic device fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG process technology to insure


    Original     		PDF HS-303ARH FN6411 MIL-PRF-38535 HS-303ARH HS-303RH, 300kRAD 5962F9581304VXC 5962F9581304QXC smd transistor s3 HI-303 HS-303RH 60MeV-mg 3d1431 5962F9581304VCC

    capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102

    transistor d143

    Abstract: HS-303BRH smd k14a 5962F9581304VXC K14A D143 303B 95813 HI-303 Intersil HS0
    Text: HS-303ARH, HS-303BRH Data Sheet July 7, 2008 Radiation Hardened CMOS Dual SPDT Analog Switch FN6411.1 Features • QML, Per MIL-PRF-38535 The HS-303ARH and HS-303BRH analog switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG process


    Original     		PDF HS-303ARH, HS-303BRH FN6411 MIL-PRF-38535 HS-303ARH HS-303BRH HS-303RH, 300kRAD transistor d143 smd k14a 5962F9581304VXC K14A D143 303B 95813 HI-303 Intersil HS0

    transistor SMD p12

    Abstract: SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd NCP1252 CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ
    Text: TN1252 NCP1252 Boost and CAT4026 LED Driver Board 2010-October-04 TECHNICAL NOTE Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package. No licenses to ON Semiconductor’s or any third party’s Intellectual Property is conveyed by the transfer of this


    Original     		PDF TN1252 NCP1252 CAT4026 2010-October-04 TN4026/D transistor SMD p12 SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    Rad hard for Harris

    Abstract: No abstract text available
    Text: HS-303RH-T Data Sheet July 1999 Radiation Hardened CMOS Dual SPDT Analog Switch File Number 4602.1 Features QM L Class T, Per MIL-PRF-38535 Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML


    OCR Scan     		PDF HS-303RH-T 100kRAD HS-303RH-T 1-800-4-HARRIS Rad hard for Harris

    5962-95813

    Abstract: No abstract text available
    Text: HS-303RH-T S em iconductor December 1998 Data Sheet Radiation Hardened CMOS Dual SPDT Analog Switch File Num ber 4602 Features QM L Class T, Per MIL-PRF-38535 Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML


    OCR Scan     		PDF HS-303RH-T MIL-PRF-38535 100kRAD HS-303RH-T 1-800-4-HARR 5962-95813