RIL3N
Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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711002b
00b3bll
BLY91C
OT-120.
RIL3N
transistor 1107
transistor tt 2222
W045
TT 2222
BLY91C
j0718
RF POWER TRANSISTOR NPN vhf
transistor L6
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transistor SE 431
Abstract: No abstract text available
Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem en t to B D 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a se V o lta g e Sym bol : BD176 Rating Unit
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BD176/178/180
BD176
BD178
transistor SE 431
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2SB424
Abstract: 2SD234 2SD235
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC1116A
Abstract: transistor 431A transistor tl 431A h a 431a transistor 2SC1619A 2SA119 2SC1008A 2SC16 2SC1517A SI 7300
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SCU03A
2SC1116A
tc-25t
2SC1619A
100MHz,
2SC1775A
transistor 431A
transistor tl 431A
h a 431a transistor
2SA119
2SC1008A
2SC16
2SC1517A
SI 7300
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bly91a
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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7110fl2b
BLY91A
T-33-07
OT-48/2
bly91a
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transistor SE 431
Abstract: QM150DY-2H transistor 431 N QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • lc • V cex • hFE Collector c u rre n t. 150A Collector-em itter vo lta g e . 1000V DC current g a in . 75
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QM150DY-2HK
E80276
E80271
transistor SE 431
QM150DY-2H
transistor 431 N
QM15
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ic TT 2222
Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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BLY89A
PL-25W
ic TT 2222
transistor tt 2222
BLY89A
TT 2222 npn
Transistor bly89a
TT 2222
npn 2222 transistor
yl 3710
dfv 36
mb 3712
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BLY88
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'îE D • ^53^31 002=11^2 SO? ■ APX BLY88Ü/01 A V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88Ã
BLY88
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transistor k 3728
Abstract: BLY90 A-04 TRIMMER capacitor 160 pF 270j capacitor SOT-55 philips Trimmer 60 pf
Text: — - ; — 5 - : _ N AMER P H IL IP S /D IS C R E T E 86D 0 1 92 8 . . — _ l i _ _ OLE I D •
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BLY90
transistor k 3728
BLY90
A-04
TRIMMER capacitor 160 pF
270j capacitor
SOT-55
philips Trimmer 60 pf
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SOT122A
Abstract: 7Z78437
Text: hSE 711DÖ2L □Qb3571 ÖSS BiPHIN T> PHILIPS BLY87C/01 IN TER NA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilita ry transmitters w ith a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to
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Qb3571
BLY87C/01
SOT122A
7Z78437
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D40 transistor
Abstract: D40A ct d40b D40B D40C D41B D41A D41C e100n
Text: v.'%% mm Êm b3E D GILDAY TE CH NI CAL LAMP 15 MIN 2,3 +/- .25 r COLLECTOR^? r gré.» -.22 MIN " 0 4 . 0 +/- .25 ± fenili COLLECTOR ¿¿-1 33 2 .5 4 f\6 t IGTL 3^77 ^40 0000 431 O^ö 5 +/• .25 1.5 - Sfili 0 $ +/- .25 1 M AX" 1; M AX Phototransistors Emitter to
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100nA
100nA
D40 transistor
D40A
ct d40b
D40B
D40C
D41B
D41A
D41C
e100n
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BLX95
Abstract: TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer
Text: b5E D 711DÖ2b 0Db353fl 523 « P H I N BLX95 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is
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0Db353fl
BLX95
VCC-28V
BLX95
TRIMMER capacitor 10-40 pf
G0b35
ptfe trimmer philips 100 pf
International Power Sources
PHILIPS 4312 amplifier
IEC134
uhf trimmer capacitor
Miniature Ceramic Plate Capacitors 2222 philips
philips 2222 trimmer
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BFS22A
Abstract: J22 transistor 27Z60 BFS22
Text: J b^E J> N AUER PHILIPS/DISCRETE bbS3^31 DDSÔ7BE Ifi? I IAPX BFS22A V.H.F. POWER TRANSISTOR N-P-N e p itaxia l planar tra n sisto r intended fo r use in class-A, B and C operated m obile, industrial and m ilita ry tra n s m itte rs w ith a supply voltage o f 13,5 V . The tra n sisto r is resistance stabilized. Every tra n
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BFS22A
BFS22A
J22 transistor
27Z60
BFS22
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BFS23A
Abstract: 4312 020 36640
Text: b5E D PHILIPS INTERNATIONAL m 711002b Ü0b2b27 731 BFS23A ¡PHIN X V.H.F. POWER TRANSISTOR N-P-N epitaxial Planartransistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage o f 28 V. The transistor is resistance stabilized. Every tran
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711002b
0b2b27
BFS23A
9-j18
O-39/1
BFS23A
4312 020 36640
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BLX95
Abstract: BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm
Text: » • bbsa'm oas'ìbHi dhs N AMER PHILIPS/DISCRETE IAPX BLX95 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is
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BLX95
BLX95
BB313
L1042
blx95a
TRIMMER capacitor 10-40 pf
D45 TRANSISTOR
philips 2222 trimmer
IEC134
Miniature Ceramic Plate Capacitors 2222 philips
15Kg-cm
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D02fc
Abstract: ITE13F06
Text: Si GE C P L E S S E Y SHM C O N D U C T O R S PRELIMINARY INFORMATION D S 4310 -1.2 IT E 1 3 F 0 6 /IT E 1 3 C 0 6 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE13X06 is a robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT designed for
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ITE13X06
ITE13X06
37bfi5E2
37bflS22
2b361
002b3Ã
D02fc
ITE13F06
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J119 transistor
Abstract: enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104
Text: Ph » |P ^ « n jicon ducto» ^ ^ bfc,53^ 3 1 D DB^ fiM b M APX Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN C O N F IG U R A T IO N • High pow er gain • Low noise figure • G o o d therm al stability
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BLF145
OT123
-SOT123
7Z31SOS.
9-j14
5-j14
J119 transistor
enamelled copper wire tables
4312 020 36640
BLF145
SSB transmitter
222285247104
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A 673 C2 transistor
Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Text: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.
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711002b
BLW30
OT120
-SOT12Q
MBA451
RA377
A 673 C2 transistor
RF POWER TRANSISTOR NPN vhf
BLW30
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PDF
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BLY88A
Abstract: A41E BLY88 W1032 Paver Components
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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DQ57R27
BLY88A
to-16
BLY88A
A41E
BLY88
W1032
Paver Components
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BLY93A
Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
Text: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran
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001450t.
BLY93A
OT-56.
Tmb-25
BLY93A
D 1062 transistor
Trimmer 10-60 pf
IEC134
transistor ao
yl 1060
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BLY87A
Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009
Text: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y
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711002b
G027C1G3
BLY87A
T-33-07
BLY87A
transistor bly87a
C 1008 y transistor
RF POWER TRANSISTOR NPN
T-33-07
a 1009
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BFS22A
Abstract: No abstract text available
Text: PHILIPS bSE IN TE RNA TI ONA L T> m 711002b O D b S b n bbS I PHIN B FS 2 2 A V.H.F. POW ER TRAN SISTO R N-P-N epitaxial planar transistor intended fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran
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711002b
BFS22A
BFS22A
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transistor itt 975
Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz
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BLX15
transistor itt 975
BLX15
philips blx15
BY206
blx15 push pull
hie bd135
PHILIPS 4312 amplifier
Philips Application BLX15
TRANSISTOR blx15
4312 020 36640
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Untitled
Abstract: No abstract text available
Text: LIN Doc #; 1431 WFMTY M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f P rogrammable R eference I n n o v a t i o n P r o d u c t i o n D ata DESCRIPTION T he LX1431 is a n adjustable sh u n t voltage regulator featuring 100mA sink capability, a
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LX1431
100mA
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