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    TRANSISTOR SC 157 Search Results

    TRANSISTOR SC 157 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SC 157 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC237

    Abstract: bc547 marking transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power


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    PDF 416/SC inch/3000 2SA1774 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 bc547 marking transistor

    2N2222A motorola

    Abstract: BC237 H2A transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package


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    PDF 70/SOT inch/3000 MSB1218A-RT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N2222A motorola BC237 H2A transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


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    PDF LMSD1819A-RT1G SC-70/SOT-323 SC-70/SOTâ

    2N3819

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for


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    PDF OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2907AWT1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package


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    PDF 323/SC MMBT2907AWT1 323/SC

    marking 6AA SOD

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is


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    PDF 323/SC MMBT2222AWT1 323/SC marking 6AA SOD

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. 1


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    PDF LMBT2222ATT1 SC-89 LMBT2222ATT3

    HBFP-0450

    Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    PDF HBFP-0450 SC-70 OT-343) HBFP-0450 5968-5434E 5988-0133EN 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1

    BJT BF 167

    Abstract: kf 203 e 011 transistor HBFP0450TR1 L 3705
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    PDF HBFP-0450 SC-70 OT-343) HBFP-0450 packa00 5968-2070E BJT BF 167 kf 203 e 011 transistor HBFP0450TR1 L 3705

    Untitled

    Abstract: No abstract text available
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    PDF HBFP-0450 SC-70 OT-343) HBFP-0450 5968-2070E 5968-5434E

    Untitled

    Abstract: No abstract text available
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz


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    PDF HBFP-0450 SC-70 OT-343) HBFP-0450 5968-2070E

    MRF917T1

    Abstract: mrf917 S212 HP11590
    Text: MOTOROLA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors LOW NOISE HIGH FREQUENCY TRANSISTOR CASE 419–02, STYLE 3 SC–70/SOT–323 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 12 Vdc Collector–Base Voltage


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    PDF MRF917T1 70/SOT MRF917T1 mrf917 S212 HP11590

    INA-12063

    Abstract: INA-12 INA-12063-BLK INA-12063-TR1 ir 032
    Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance


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    PDF INA-12063 OT-363 SC-70) INA-12063 5965-5365E INA-12 INA-12063-BLK INA-12063-TR1 ir 032

    BC237

    Abstract: BC857A 0482 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB710-RT1 COLLECTOR 3 Motorola Preferred Device 3 2 BASE 1 EMITTER 2 1 CASE 318D–04, STYLE 1 SC–59 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage


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    PDF MSB710-RT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 BC857A 0482 transistor

    285-1

    Abstract: 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063 INA-12063-BLK
    Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance


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    PDF INA-12063 OT-363 SC-70) INA-12063 285-1 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063-BLK

    ic sc 6200

    Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


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    PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E ic sc 6200 transistor 2222a data sheet AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Pb-Free package is available L2SC4083PWT1G 3 COLLECTOR z 3 1 BASE 1 2 EMITTER 2 SC-70/SOT-323 Absolute maximum ratings Ta=25 oC Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage


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    PDF L2SC4083PWT1G SC-70/SOT-323 L2SC4083PWT1G

    d0147

    Abstract: 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC3838K 2SC4083 T146
    Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: — 2SC3838K; AD^, where ★is hFE code — 2SC4083; 1D-*, where ★ is hFE code high transition frequency, typically


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    PDF 2SC3838K 2SC4083 SC-59) SC-70) 2SC3838K; 2SC4083; 2SC3838K GD147bS 2SC3838K, d0147 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC4083 T146

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 1041T060
    Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low


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    PDF

    transistor BD 522

    Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
    Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


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    PDF b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800

    PT4572A

    Abstract: TO-117A az4v pt45
    Text: nOTOROLA SC XSTRS/R F 4bE D • b3b7554 00^5132 M ■ MOTb T -2 S -Û 5 MOTOROLA ■i SEM ICONDUCTOR ■ TECHNICAL DATA PT45/2A The RF Line NPN Silicon High Frequency Transistor lc = zoo mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for broadband class A applications requiring high output, low distortion


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    PDF b3b7554 PT45/2A 244D-01. O-117A) PT4572A TO-117A az4v pt45

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


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    PDF MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68

    5965-5365E

    Abstract: marking CJP TT 2490 marking aat sot363 6252 IC circuit diagram
    Text: Whit HEWLETT* wSKM PACKARD 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit • Single Positive Supply Voltage 1.5 - 5V Surface Mount Package SOT-363 (SC -70) • Current Adjustable, 1 to


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    PDF INA-12063 OT-363 INA-12063 OT-363 OT-143 2J001005 5965-5365E 5965-5365E marking CJP TT 2490 marking aat sot363 6252 IC circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by CA3146/D MOTOROLA M SC XSTRS/R F 4bE » b3b7254 0CHb4Ab MOTOROLA Q •MOTb - r ~ H ^ Z 5 CA3146 SEMICONDUCTORS P.O. BOX 20912 • PHOENIX. ARIZONA 85036 Specifications and A p p lication s Information GENERAL PURPOSE TRANSISTOR ARRAY


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    PDF CA3146/D b3b7254 CA3146 A3146