TRANSISTOR S9018 G Search Results

TRANSISTOR S9018 G Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR S9018 G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
g21 Transistor Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25	Original	S9018 400MHz	PDF
S9018 transistor Abstract: S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	S9018 400MHz S9018 transistor S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8	Original	OT-23 S9018 OT-23 400MHz	PDF
s9018 transistor Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8	Original	OT-23 S9018 OT-23 400MHz s9018 transistor	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	S9018	PDF
S9018 Abstract: S9018 transistor transistor S9018 S9018 J8 transistor SOT23 J8 Text: S9018 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500	Original	S9018 OT-23 01-Jun-2004 400MHz S9018 S9018 transistor transistor S9018 S9018 J8 transistor SOT23 J8	PDF
S9018 transistor Abstract: S9018 transistor S9018 S9018* transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 3. COLLECTOR	Original	OT-23 S9018 OT-23 400MHz S9018 transistor S9018 transistor S9018 S9018* transistor	PDF
transistor S9018 Abstract: S9018 S9018 transistor S9018 to-92 Text: S9018 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-92 Power dissipation o P CM :0.31 W (Tamb=25 C) Collector current I CM :0.05 A Collector-base voltage V (BR)CBO :25 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	S9018 transistor S9018 S9018 S9018 transistor S9018 to-92	PDF
S9018H Abstract: S9018G Text: MCC S9018 S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H S9018G	PDF
S9018H Abstract: transistor s9018h transistor S9018 Text: MCC S9018 S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H transistor s9018h transistor S9018	PDF
S9018 Abstract: transistor S9018 Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A	Original	S9018 31Watts -55OC 100uAdc, 20Vdc, 15Vdc, 10mAdc, S9018 transistor S9018	PDF
transistor S9018 Abstract: s9018 Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A	Original	S9018 31Watts -55OC 100uAdc, 20Vdc, 15Vdc, 10mAdc, transistor S9018 s9018	PDF
transistor S9018 Abstract: S9018 S9018 to-92 S9018 transistor S9018 TO92 Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018 31Watts -55OC 10mAdc, 400MHz) transistor S9018 S9018 S9018 to-92 S9018 transistor S9018 TO92	PDF

Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018-G S9018-H S9018-I 31Watts -55OC S9018	PDF
transistor s9018 Abstract: S9018H Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, transistor s9018 S9018H	PDF
Untitled Abstract: No abstract text available Text: MCC S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc,	PDF
S9018H Abstract: No abstract text available Text: MCC S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, S9018H	PDF
S9018G Abstract: S9018H Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.	Original	S9018-G S9018-H S9018-I 31Watts -55OC S9018 S9018G S9018H	PDF
transistor cross reference Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER	Original	OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
secos gmbh Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers	Original	SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649	PDF
secos gmbh Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3	Original	SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA	PDF
S9018 transistor Abstract: S9018 S9018* transistor S9018 TO92 Text: M C C TO-92 Plastic-EncapsuSate Transistors S9018 TRANSISTOR NPN FEATURES P cm; 0.31W (Tamb=25°C) Icm: 0.05 A V\|8R)CB0: 25 V ► Junction tem perature range T j.T s tg : ELECTRICAL -5 5 “C to + 150°C CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e	OCR Scan	S9018 400MHz S9018 S9018 transistor S9018* transistor S9018 TO92	PDF

TRANSISTOR S9018 G Search Results

TRANSISTOR S9018 G Result Highlights (5)

TRANSISTOR S9018 G Datasheets Context Search

g21 Transistor

Untitled

S9018 transistor

Untitled

s9018 transistor

Untitled

S9018

S9018 transistor

transistor S9018

S9018H

S9018H

S9018

transistor S9018

transistor S9018

Untitled

transistor s9018

Untitled

S9018H

S9018G

transistor cross reference

Y2 transistor

secos gmbh

secos gmbh

S9018 transistor