TRANSISTOR S9011 CHARACTERISTICS Search Results

TRANSISTOR S9011 CHARACTERISTICS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR S9011 CHARACTERISTICS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor S9011 Abstract: S9011* transistor S9011 Transistor S9011 characteristics s9011 transistor Text: S9011 S9011 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.31 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.03 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃	Original	PDF	S9011 30MHz transistor S9011 S9011* transistor S9011 Transistor S9011 characteristics s9011 transistor
transistor s9011 Abstract: S9011* transistor transistor marking code SOT-23 Transistor S9011 characteristics S9011 SOT-23 transistor code PB marking AM sot-23 NPN Silicon Epitaxial Planar Transistor sot23 marking code br transistor sot23 pf Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current. IC= 30mA） z Power dissipation.(PC=200mW S9011 Pb Lead-free APPLICATIONS z AM converter, AM/FM if amplifier general purpose transistor. SOT-23	Original	PDF	S9011 200mW) OT-23 SSTC126 transistor s9011 S9011* transistor transistor marking code SOT-23 Transistor S9011 characteristics S9011 SOT-23 transistor code PB marking AM sot-23 NPN Silicon Epitaxial Planar Transistor sot23 marking code br transistor sot23 pf
transistor S9011 Abstract: Transistor S9011 characteristics S9011* transistor S9011 datasheet of ic 555 datasheet ic 555 IC 555 f-30MHz s9011 transistor S9011 npn Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9011 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0.31 W（Tamb=25℃） Collector current ICM: 0.03 A Collector-base voltage V BR CBO : 30 V Operating and storage junction temperature range	Original	PDF	S9011 O--92 270TYP 050TYP transistor S9011 Transistor S9011 characteristics S9011* transistor S9011 datasheet of ic 555 datasheet ic 555 IC 555 f-30MHz s9011 transistor S9011 npn
transistor S9011 Abstract: S9011 S9011 npn S9011* transistor FORWARd International Transistor S9011 characteristics Text: I e FORWARD INTERNATIONAL ELECTRONICS LID . S9011 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER , AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at T r a M ^ C Characteristic Symbol Rating Collector-Base Volage	OCR Scan	PDF	S9011 100uA 10VIE) 500ohm transistor S9011 S9011 S9011 npn S9011* transistor FORWARd International Transistor S9011 characteristics
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	PDF	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p