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    TRANSISTOR S59 Search Results

    TRANSISTOR S59 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S59 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101 BFU590QX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101

    FJY3009R

    Abstract: FJY4009R
    Text: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Eqivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4009R FJY3009R FJY3009R FJY4009R

    transistor S59

    Abstract: FJY3009R FJY4009R
    Text: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Equivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4009R FJY3009R transistor S59 FJY3009R FJY4009R

    transistor S59

    Abstract: Transistor Equivalent list FJY3009R FJY4009R
    Text: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Equivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4009R FJY3009R transistor S59 Transistor Equivalent list FJY3009R FJY4009R

    S594TX

    Abstract: S594TXR S594TXRW TRANSISTOR SMD MARKING g1
    Text: S594TX/S594TXR/S594TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S594TX/S594TXR/S594TXRW S594TX D-74025 05-Jun-01 S594TXR S594TXRW TRANSISTOR SMD MARKING g1

    S594TX

    Abstract: S594TXR S594TXRW
    Text: S594TX/S594TXR/S594TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S594TX/S594TXR/S594TXRW S594TX D-74025 05-Jun-01 S594TXR S594TXRW

    Untitled

    Abstract: No abstract text available
    Text: S595TX/S595TXR/S595TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S595TX/S595TXR/S595TXRW S595TX D-74025 05-Jun-01

    Untitled

    Abstract: No abstract text available
    Text: S593TX/S593TXR/S593TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S593TX/S593TXR/S593TXRW S593TX D-74025 05-Jun-01

    S595TX

    Abstract: S595TXR S595TXRW
    Text: S595TX/S595TXR/S595TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S595TX/S595TXR/S595TXRW S595TX D-74025 05-Jun-01 S595TXR S595TXRW

    S593TX

    Abstract: S593TXR S593TXRW X3R marking
    Text: S593TX/S593TXR/S593TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S593TX/S593TXR/S593TXRW S593TX D-74025 05-Jun-01 S593TXR S593TXRW X3R marking

    S595TX

    Abstract: S595TXR S595TXRW
    Text: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S595TX/S595TXR/S595TXRW S595TX D-74025 05-Jun-01 S595TXR S595TXRW

    Untitled

    Abstract: No abstract text available
    Text: S594TX/S594TXR/S594TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S594TX/S594TXR/S594TXRW S594TX D-74025 05-Jun-01

    S593TX

    Abstract: S593TXR S593TXRW
    Text: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF S593TX/S593TXR/S593TXRW S593TX D-74025 05-Jun-01 S593TXR S593TXRW

    S594TX

    Abstract: S594TXR S594TXRW mg sot-143 smd transistor marking sep
    Text: S594TX/S594TXR/S594TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, medium forward transadmittance


    Original     		PDF S594TX/S594TXR/S594TXRW OT-143 OT-143R OT-343R D-74025 02-Sep-04 S594TX S594TXR S594TXRW mg sot-143 smd transistor marking sep

    S595TX

    Abstract: S595TXR S595TXRW smd transistor marking sep SG1C
    Text: S595TX/S595TXR/S595TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance


    Original     		PDF S595TX/S595TXR/S595TXRW OT-143 OT-143R OT-343R D-74025 03-Sep-04 S595TX S595TXR S595TXRW smd transistor marking sep SG1C

    Untitled

    Abstract: No abstract text available
    Text: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, high forward transadmittance


    Original     		PDF S595TX/S595TXR/S595TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 02-May-05

    mg sot-143

    Abstract: SG1C S593TX S593TXR S593TXRW SMD transistor 26 sot 23 sot343r
    Text: S593TX/S593TXR/S593TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance


    Original     		PDF S593TX/S593TXR/S593TXRW OT-143 OT-143R OT-343R D-74025 02-Sep-04 mg sot-143 SG1C S593TX S593TXR S593TXRW SMD transistor 26 sot 23 sot343r

    Untitled

    Abstract: No abstract text available
    Text: KS621230A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S IH Q IG D d f l in Q t O n Transistor Module 300 Amperes/1200 Volts O U T L IN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621230A7 Amperes/1200

    transistor S59

    Abstract: KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62
    Text: m U E R E X KS621230A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lB D S f H n g t O f l Transistor Module 300 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621230A7_ Amperes/1200 transistor S59 KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.


    OCR Scan     		PDF 0SD433Ã DDD37DS T-91-01 800mA D37Db T-91-Q1

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    TRANSISTOR C 557 B

    Abstract: transistor bc 557 c le B 557 PNP TRANSISTOR 8C556 transistor B 560 nf21 BC558 pnp transistor BC 558 transistor BC546 pnp bc559 transistor
    Text: PNP EPITAXIAL SILICON TRANSISTO R BC556/557/558/S59/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: 8C556, Veto* -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 TO-92 ABSO LUTE MAXIMUM RATINGS T a = 2 5 1 C Sym bol Characteristic Collector-Base Capacitance


    OCR Scan     		PDF BC556/557/558/S59/560 8C556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR C 557 B transistor bc 557 c le B 557 PNP TRANSISTOR 8C556 transistor B 560 nf21 BC558 pnp transistor BC 558 transistor BC546 pnp bc559 transistor

    gs gl 317

    Abstract: telefunken ha 880 gl 1150 S595TRW 945 mosmic
    Text: Tem ic S595TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF s595trw S595TRW 22-Oct-97 22-Oct-97 gs gl 317 telefunken ha 880 gl 1150 945 mosmic