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    TRANSISTOR S49 Search Results

    TRANSISTOR S49 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S49 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-S493

    Abstract: Q62702-S636
    Text: BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code Q62702-S493


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    PDF Q62702-S493 Q62702-S636 E6288 E6325 Q62702-S493 Q62702-S636

    TO-92 SS

    Abstract: Q62702-S493 Q62702-S636
    Text: BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code Q62702-S493


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    PDF Q62702-S493 Q62702-S636 E6288 E6325 TO-92 SS Q62702-S493 Q62702-S636

    IR s27

    Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
    Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.


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    PDF HT48RA0-5 HT622x) HT48RA0-5 20SSOP) IR s27 infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor

    sud*45N05-20L

    Abstract: No abstract text available
    Text: SUD45N05-20L N-Channel Enhancement-Mode Transistor, Logic Level Product Summary rDS on (W) ID (A)a 0.018 @ VGS = 10 V "43 0.020 @ VGS = 4.5 V "43 VDS (V) 50 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45N05-20L S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


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    PDF SUD45N05-20L O-252 S-49516--Rev. 13-Sep-96 sud*45N05-20L

    SUD30N03-30

    Abstract: No abstract text available
    Text: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


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    PDF SUD30N03-30 O-252 S-49520--Rev. 18-Dec-96 SUD30N03-30

    SUB75N05-06

    Abstract: SUP75N05-06
    Text: SUP/SUB75N05-06 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


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    PDF SUP/SUB75N05-06 O-220AB O-263 SUB75N05-06 SUP75N05-06 O-220AB O-263) O-263 S-49520--Rev. 18-Dec-96 SUB75N05-06 SUP75N05-06

    SUD50N03-10

    Abstract: No abstract text available
    Text: SUD50N03-10 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "15 0.019 @ VGS = 4.5 V "12 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD50N03-10 S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF SUD50N03-10 O-252 S-49520--Rev. 18-Dec-96 SUD50N03-10

    SUD45P03-15

    Abstract: No abstract text available
    Text: SUD45P03-15 P-Channel Enhancement-Mode Transistor Product Summary rDS on (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF SUD45P03-15 O-252 S-49520--Rev. 18-Dec-96 SUD45P03-15

    SUD45N05-20L

    Abstract: No abstract text available
    Text: SUD45N05-20L N-Channel Enhancement-Mode Transistor, Logic Level Product Summary rDS on (W) ID (A)a 0.018 @ VGS = 10 V "43 0.020 @ VGS = 4.5 V "43 VDS (V) 50 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45N05-20L S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


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    PDF SUD45N05-20L O-252 S-49516--Rev. 13-Sep-96 SUD45N05-20L

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor s49

    Abstract: KS624530 powerex ks62
    Text: m H B XX KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


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    PDF KS624530 Amperes/600 transistor s49 KS624530 powerex ks62

    Untitled

    Abstract: No abstract text available
    Text: BSS92 Infine on technologies SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = "0'8.-2.0 V Type Vbs BSS92 -240 V Type BSS92 BSS92 BSS92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 -0.15 A ^DS(on) Package


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    PDF BSS92 Q62702-S497 Q62702-S633 Q62702-S502 E6288 E6296

    Q1205

    Abstract: ss92 BSS92 transistor sS92 siemens ss92
    Text: SIEMENS BSS92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b -0.15 A BSS92 ^DS -240 V Type BSS92 BSS92 BSS 92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 flDS(on) 20 a Package Marking


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    PDF BSS92 BSS92 Q62702-S497 Q62702-S633 Q62702-S502 E6288 E6296 E6325 Q1205 ss92 transistor sS92 siemens ss92

    transistor Siemens sS 92

    Abstract: siemens ss92 ss92 SS 92 siemens E-6325 transistor sS92 SS-92 BSS92
    Text: SIEMENS BSS 92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode 2 . • Logic Level i * ^GS th = -0.8.-2.0 V ^ 3 VPT05158 Pin 1 Type BSS 92 Vds -240 V Type BSS 92 BSS 92 BSS 92 BSS 92 Ordering Code Q62702-S458 Q62702-S497 Q62702-S633


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    PDF Q62702-S458 Q62702-S497 Q62702-S633 Q62702-S502 E6288 E6296 E6325 transistor Siemens sS 92 siemens ss92 ss92 SS 92 siemens E-6325 transistor sS92 SS-92 BSS92

    bss101

    Abstract: bss 419
    Text: SIEMENS BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 CO Type b 0.13 A BSS 101 240 V Type BSS 101 BSS 101 BSS 101 Ordering Code Q62702-S484 Q62702-S493 Q62702-S636 Pin 3 G


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    PDF Q62702-S484 Q62702-S493 Q62702-S636 E6288 E6325 bss101 bss 419

    dd127d

    Abstract: dd127db marking g5 BF transistor dd127 BF550R Sot-23R hf transistor BF550 SOT23R
    Text: Te m ic BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features • • High power gain Low noise figure 1 1 R ^ 2 ET 3 3 2 S49280 95 10527 BF550 Marking: G2 Plastic case SOT 23


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    PDF BF550 BF550R 0G12705 DD127Db dd127d marking g5 BF transistor dd127 Sot-23R hf transistor SOT23R

    siemens bss100

    Abstract: BSS100 BSS100 TO-92 BSS100 Siemens
    Text: SIEMENS BSS 100 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 .8 .2 .0 V Type (O £ BSS 100 100 V Type BSS 100 BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S483 Q62702-S499 Q62702-S007 Q67000-S206 b


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    PDF Q62702-S483 Q62702-S499 Q62702-S007 Q67000-S206 E6288 E6296 E6325 BSS100 siemens bss100 BSS100 BSS100 TO-92 BSS100 Siemens

    Untitled

    Abstract: No abstract text available
    Text: BSS 100 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Type ^DS !d f î DS(on) Package Marking BSS 100 100 V 0.22 A 6Q TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S499


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    PDF Q62702-S499 Q62702-S007 Q62702-S206 E6288 E6296 E6325 BSS100

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    C4552

    Abstract: l78m12cv
    Text: SGS-THOMSON L78M00 SERIES POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 0.5A ■ OUTPUT VO LTAGES OF 5 ; 6 ; 8 ; 1 2 ; 1 5 ; 1 8 ; 20 ; 24V ■ THERM AL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION D E S C R IP T IO N


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    PDF L78M00 OT-82 L78MOO L78MXX S-4977 C4552 l78m12cv

    1D TRANSISTOR

    Abstract: DIODE 1D
    Text: T fmtc SUD50N03-10 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V DS V r DS(on) (£2) 0.010 @ VGS = 10 V 0.019 @ VGS = 4.5 V 30 I d (A) ±15 ±12 v;f _ - «I 8^ TO-252 O XX G O- Drain Connected to Tab G D S Top View Ô Order Number:


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    PDF SUD50N03-10 O-252 SUD50N03-10 S-49520--Rev. 18-Dec-96 1D TRANSISTOR DIODE 1D

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB 37E LTD 0133167 » SEMELAB J U L 0 6 1988 MJ14000 MJ14002 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for switching applications and high power amplifier circuits M E C H A N IC A L D A T A Dim ensions in mm FEATURES « -1 6 • 15 A lo w v ce|sat,


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    PDF MJ14000 MJ14002 MJ14000 00002E7

    Untitled

    Abstract: No abstract text available
    Text: r Z Z ^ 7# L 7 8 m oo S E R IE S S G S -T H O M S O N HO@lfS lHICT!®!D<Bi POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A • OUTPUT VOLTAGES OF 5; 6 ; 8 ; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION


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    PDF L78M00 O-220, ISOWATT220, OT-82, OT-194

    Untitled

    Abstract: No abstract text available
    Text: Temic SUD45P03-15 Semiconductors P-Channel Enhancement-Mode Transistor P rod uct S u m m a r y V d s V 30 r DS(on) (£2) I d (A )a 0.015 @ Vos = -10 V ± 13 0.024 @ Vgs = -4.5 V ±8 po TO-252 O G O Drain Connected to Tab G D S Top View Ö D Order Number:


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    PDF SUD45P03-15 O-252 S-49520--Rev. 18-Dec-96