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    TRANSISTOR S2F Search Results

    TRANSISTOR S2F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S2F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR S2F

    Abstract: FJX2907A
    Text: FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage


    Original     		FJX2907A OT-323 -10mA, TRANSISTOR S2F FJX2907A PDF

    TRANSISTOR S2F

    Abstract: FJX2907A
    Text: FJX2907A FJX2907A General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage


    Original     		FJX2907A OT-323 -10mA, TRANSISTOR S2F FJX2907A PDF

    FJX2907A

    Abstract: TRANSISTOR S2F
    Text: FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage


    Original     		FJX2907A OT-323 -10mA, FJX2907A TRANSISTOR S2F PDF

    TRANSISTOR S2F

    Abstract: No abstract text available
    Text: FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage


    Original     		FJX2907A OT-323 -10mA, FJX2907ATF TRANSISTOR S2F PDF

    TRANSISTOR S2F

    Abstract: No abstract text available
    Text: FJX2907A FJX2907A General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCES Collector-Emitter Voltage


    Original     		FJX2907A OT-323 -10mA, TRANSISTOR S2F PDF

    PJ 0349

    Abstract: PJ 2399 0709s
    Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA


    OCR Scan     		AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s PDF

    SMBT2222A SOT23

    Abstract: of ic 2907
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F


    Original     		SMBT2907A/MMBT2907A SMBT2222A MMBT2222A SMBT2907A/MMBT2907A SMBT2222A SOT23 of ic 2907 PDF

    2907 TRANSISTOR PNP

    Abstract: 2907 MMBT2222A SMBT2222A
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F


    Original     		SMBT2907A/MMBT2907A SMBT2222A MMBT2222A SMBT2907A/MMBT2907A 2907 TRANSISTOR PNP 2907 MMBT2222A PDF

    S2F MARKING SOT23

    Abstract: TRANSISTOR S2F s2F SOT23 BCW66 MMBT2222A SMBT2222A MARKING CODE 24 TRANSISTOR smbt2222a sot23 marking code YM MARKING CODE SOT23-3
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F


    Original     		SMBT2907A/MMBT2907A SMBT2222A MMBT2222A SMBT2907A/MMBT2907A BCW66 S2F MARKING SOT23 TRANSISTOR S2F s2F SOT23 BCW66 MMBT2222A MARKING CODE 24 TRANSISTOR smbt2222a sot23 marking code YM MARKING CODE SOT23-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration


    Original     		SMBT2907A/MMBT2907A SMBT2222A/ MMBT2222A VPS05161 SMBT2907A/MMBT2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration


    Original     		SMBT2907A/MMBT2907A SMBT2222A/ MMBT2222A VPS05161 SMBT2907A/MMBT2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B


    Original     		SMBT2907A/MMBT2907A SMBT2222A MMBT2222A SMBT2907A/MMBT2907A PDF

    2907 TRANSISTOR PNP

    Abstract: marking eh sot23 of ic 2907 2907 2907 TRANSISTOR MMBT2222A SMBT2222A
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B


    Original     		SMBT2907A/MMBT2907A SMBT2222A MMBT2222A SMBT2907A/MMBT2907A 2907 TRANSISTOR PNP marking eh sot23 of ic 2907 2907 2907 TRANSISTOR MMBT2222A PDF

    2907 TRANSISTOR PNP

    Abstract: 2907 S2F MARKING SOT23 MMBT2222A SMBT2222A
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration 2=E 3=C


    Original     		SMBT2907A/MMBT2907A SMBT2222A/ MMBT2222A SMBT2907A/MMBT2907A VPS05161 2907/A EHP00752 EHP00753 Jun-12-2002 2907 TRANSISTOR PNP 2907 S2F MARKING SOT23 MMBT2222A SMBT2222A PDF

    2907A

    Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
    Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E


    Original     		Q68000-A6474 VPS05161 OT-23 Jan-22-1999 2907/A EHP00754 2907A 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		SMBT2907A SMBT2222A VPS05161 Jul-11-2001 2907/A EHP00752 EHP00753 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474


    OCR Scan     		68000-A6474 OT-23 PDF

    2907 TRANSISTOR PNP

    Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
    Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		VPS05161 OT-23 2907/A EHP00752 EHP00753 Oct-14-1999 EHP00754 2907 TRANSISTOR PNP 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ji-MOSV T E N T A T IV E 2SK3443 High Speed Switching, High Current Applications Industrial Applications U nit in mm Switching Regulator, DC-DC Converter and Motor Drive Applications


    OCR Scan     		2SK3443 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON L7800AB/AC SERIES PRECISION 1A REGULATORS • OUTPUT CURRENT IN EXCESS OF 1A ■ OUTPUT VOLTAGES OF 5; 6; 8; 9; 12; 15; 18; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION ■ 2% OUTPUT VOLTAGE TOLERANCE


    OCR Scan     		L7800AB/AC L7800A O-220 G0S1410 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r


    OCR Scan     		fl23fc QL73L3 23b320 PDF

    i354

    Abstract: 2N7222 IRFM440 IRFM440D i-354
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		IRFM440 MIL-S-1S500/596] IRFM440D IRFM440U O-254 MIL-S-19B00 14A551455 i354 2N7222 IRFM440 i-354 PDF

    DIODE S2F

    Abstract: TPC6006-H
    Text: TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPC6006-H Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • High-speed switching • Small gate charge: Qsw = 2.4 nC (typ.)


    Original     		TPC6006-H DIODE S2F TPC6006-H PDF

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 PDF