TRANSISTOR S2A
Abstract: FJX3906
Text: FJX3906 FJX3906 General Purpose Transistor 2 1 PNP Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage
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FJX3906
OT-323
TRANSISTOR S2A
FJX3906
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FJX3906
Abstract: No abstract text available
Text: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage
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FJX3906
OT-323
FJX3906
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TRANSISTOR S2A
Abstract: transistor marking S2A s2a transistor
Text: FJX3906 FJX3906 General Purpose Transistor 2 1 PNP Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCES Collector-Emitter Voltage
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FJX3906
OT-323
TRANSISTOR S2A
transistor marking S2A
s2a transistor
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FJX3906
Abstract: No abstract text available
Text: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage
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FJX3906
OT-323
FJX3906
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TRANSISTOR S2A
Abstract: No abstract text available
Text: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage
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FJX3906
OT-323
FJX3906TF
TRANSISTOR S2A
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Untitled
Abstract: No abstract text available
Text: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
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FJX3906
SC-70
FJX3906TF
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Untitled
Abstract: No abstract text available
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
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marking code s2a SOT23
Abstract: smbt3906 MMBT3906 infineon
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
marking code s2a SOT23
smbt3906
MMBT3906 infineon
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PDF
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MMBT3906
Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
EHP00771
EHP00768
Jul-28-2003
MMBT3906
SMBT3906
EHP00772
TRANSISTOR S2A
1N916
MMBT3904
SMBT3904
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power 22E
Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Aug-20-2001
EHP00769
power 22E
TRANSISTOR S2A
s2A SOT23
1N916
SMBT3904
SMBT3906
H12E
sot23 transistor marking 12E
IC MARKING NS-05
marking s2A
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power 22E
Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Nov-30-2001
EHP00769
power 22E
TRANSISTOR S2A
SMBT3906
1N916
SMBT3904
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3906
Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Text: SMBT 3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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100mA
VPS05161
OT-23
EHP00772
EHP00773
Oct-14-1999
EHP00768
EHP00769
3906
transistor 3906
k0300
H12E
1N916
EHP00772
3906 pnp
ic power 22E
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TRANSISTOR S2A
Abstract: power 22E FBPT-923
Text: CHENMKO ENTERPRISE CO.,LTD CH3906N1PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FBPT-923 FEATURE * Small surface mounting type. FBPT-923
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CH3906N1PT
FBPT-923
FBPT-923)
200mA)
TRANSISTOR S2A
power 22E
FBPT-923
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CH3906GP
Abstract: SOT-23 marking S2A
Text: CHENMKO ENTERPRISE CO.,LTD CH3906GP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CH3906GP
OT-23
OT-23)
200mA)
CH3906GP
SOT-23 marking S2A
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 8 Watts Push - Pull
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SQ201
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SC201
Abstract: No abstract text available
Text: polyfet rf devices SC201 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,
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SC201
SC201
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 25 Watts Push - Pull
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SK204
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended
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S8201
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TRANSISTOR S2A
Abstract: SD201
Text: polyfet rf devices SD201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended
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SD201
TRANSISTOR S2A
SD201
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 8 Watts Single Ended
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S8202
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MMBT3906_R2_00001
Abstract: No abstract text available
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
OT-23
-200mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
MMBT3906_R2_00001
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MMBT3906
Abstract: MMBT3906_R1_00001 MMBT3906R
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
-200mA
2002/95/EC
IEC61249
OT-23
OT-23,
MIL-STD-750,
MMBT3906
MMBT3906_R1_00001
MMBT3906R
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA
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MMBT3906
OT-23
-200mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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6c2 transistor
Abstract: No abstract text available
Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 2
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OCR Scan
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100mA
3904S
3906S
VPS05604
3906S
Q62702-A1202
EHA07173
OT-363
EHP00767
EHP00770
6c2 transistor
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