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    TRANSISTOR S1D Search Results

    TRANSISTOR S1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR S1d

    Abstract: Q62702-A1243 SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package


    Original     		PDF VPW05980 Q62702-A1243 SCT-595 Jun-18-1997 EHP00842 EHP00843 TRANSISTOR S1d Q62702-A1243 SCT-595

    TRANSISTOR S1d

    Abstract: SMBTA42 SMBTA92
    Text: SMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		PDF SMBTA42 SMBTA92 VPS05161 Nov-30-2001 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d SMBTA42 SMBTA92

    TRANSISTOR S1d

    Abstract: smbta42
    Text: SMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		PDF SMBTA42 SMBTA92 VPS05161 Sep-27-2002 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d smbta42

    TRANSISTOR S1d

    Abstract: No abstract text available
    Text: SMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		PDF SMBTA42 SMBTA92 VPS05161 Jun-29-2001 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d

    TRANSISTOR S1d

    Abstract: BCW66 SMBTA92
    Text: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBTA42/MMBTA42 SMBTA92 SMBTA42/MMBTA42 VPS05161 TRANSISTOR S1d BCW66 SMBTA92

    TRANSISTOR S1d

    Abstract: SMBTA92
    Text: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBTA42/MMBTA42 SMBTA92 SMBTA42/MMBTA42 VPS05161 Feb-21-2003 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d SMBTA92

    Untitled

    Abstract: No abstract text available
    Text: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBTA42/MMBTA42 SMBTA92 VPS05161 SMBTA42/MMBTA42

    TRANSISTOR S1d

    Abstract: s1D marking, datasheet sot-23
    Text: SMBTA 42 NPN Silicon Transistor for High Voltages 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP 2 1 Type Marking SMBTA 42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Oct-14-1999 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d s1D marking, datasheet sot-23

    TRANSISTOR S1d

    Abstract: No abstract text available
    Text: SMBTA42M NPN Silicon High-Voltage Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings


    Original     		PDF SMBTA42M SMBTA92M VPW05980 SCT595 Jun-29-2001 EHP00842 EHP00843 TRANSISTOR S1d

    TRANSISTOR S1d

    Abstract: SCT595 SMBTA42M SMBTA92M
    Text: SMBTA42M NPN Silicon High-Voltage Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings


    Original     		PDF SMBTA42M SMBTA92M VPW05980 SCT595 Nov-30-2001 EHP00842 EHP00843 TRANSISTOR S1d SCT595 SMBTA42M SMBTA92M

    TRANSISTOR S1d

    Abstract: SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595


    Original     		PDF VPW05980 SCT-595 Oct-14-1999 EHP00842 EHP00843 TRANSISTOR S1d SCT-595

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    power transistor 1802

    Abstract: transistor 010C ARF1510
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1510 40MHz ARF1510 power transistor 1802 transistor 010C

    ARF1511

    Abstract: 225MH
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1511 40MHz ARF1511 125lb 225MH

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1510 40MHz ARF1510 125lb

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1511 40MHz ARF1511

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		PDF ARF1510 40MHz ARF1510

    AMPLIFIER 1500w

    Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
    Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1510 40MHz ARF1510 125lb AMPLIFIER 1500w Simple test MOSFET Procedures Transistor S1D 750w planar transistor AN 1510

    rf power generator

    Abstract: ARF1511 750w planar transistor ARF 250v 1500w
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1511 40MHz ARF1511 125lb rf power generator 750w planar transistor ARF 250v 1500w

    C 4927

    Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1511 40MHz ARF1511 125lb C 4927 AMPLIFIER 1500w Simple test MOSFET Procedures

    TRANSISTOR S1d

    Abstract: AX 1101
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


    OCR Scan     		PDF Q62702-A1243 SCT-595 EHP00844 TRANSISTOR S1d AX 1101

    BSD215

    Abstract: bsd214 BSD212 BSD213 transistor BD 341
    Text: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high


    OCR Scan     		PDF BSD212 BSD215 BSD213 BSD215 BSD214 DDb7717 B5D212 transistor BD 341

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E


    OCR Scan     		PDF 68000-A6482 OT-23 Jan-22-1999 P00839

    IS21E

    Abstract: Transistor S1D
    Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE S1D43 tentative OVHF UHF BAND LOW NOISE AM P L I F IE R APLICATIONS Iß I ooWöI Low Noise : Figure : NF=1.5dB(at f=2GHz) High Gain : IS21e 12=16dB(at f=2GHz) MAXIMUM RATINGS SYMBOL RATING UNIT


    OCR Scan     		PDF S1D43 IS21e 1S21e Transistor S1D