Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR S 1014 Search Results

    TRANSISTOR S 1014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S 1014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1030mhz

    Abstract: 2TD12 HV400 SM200 1090mhz
    Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed


    Original     		PDF HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz

    transistor s 1014

    Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
    Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200

    500W TRANSISTOR

    Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
    Text: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-500L on/18us HVV1011-500L on/18 HV800 MIL-STD-883, 429-HVVi EG-01-PO17X7 500W TRANSISTOR 500W RF Transistor 1030 MHz

    HV400

    Abstract: 1030 mhz interrogator 1030 PULSED
    Text: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-075L on/18us HVV1011-075L on/18 429-HVVi EG-01-POXXX1 HV400 1030 mhz interrogator 1030 PULSED

    HVV1011-1000L

    Abstract: transistor 1000W 1000w power supply 1030 PULSED
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXX2 transistor 1000W 1000w power supply 1030 PULSED

    diode gp 429

    Abstract: HVV1011-1000L interrogator transistor 1000W
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXXX 07/XX/09 diode gp 429 interrogator transistor 1000W

    diode AR s1 56

    Abstract: 264NC DM8401
    Text: S DM8401 J UNE 21, 2005 ver1.3 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -30V -5.3A 20 @ V G S = 10V 30V


    Original     		PDF DM8401 diode AR s1 56 264NC DM8401

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at 1030 MHz & 1090 MHz using a 2.4ms pulse burst 32 s on/18 s off x 48 repeated every 24ms.


    Original     		PDF HVV1011-500L on/18 HV800A MIL-STD-883,

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    907 TRANSISTOR smd

    Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
    Text: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in


    OCR Scan     		PDF BFQ149 MSB013 907 TRANSISTOR smd smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    LT 6242

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 TENT A T I V E DA T A PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in m m The T O S H I B A TLP624, -2 and -4 consist of a g a l l i u m a r s e n i d e infrared emitting diode op t i c a l l y coupled to a photo-transistor.


    OCR Scan     		PDF TLP624 TLP624, TLP624-2 TLP62 CLA326 fr39dU LT 6242

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED S PHOTO-TRANSISTOR T L P 6 2 1 , - 2 , - 4 Unit in mm PROGRAMMABLE CONTROLLER AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621-2 offers two isolated channels in


    OCR Scan     		PDF TLP621, TLP621-2 TLP621-4 5000Vrms E67349 l29dlL

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP629,TLP629-2,TLP629-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP629, TLP629-2, TLP629-4 TELECOMMUNICATION OFFICE MACHINE TELEPHONE USE EQUIPMENT The T O S H IB A TLP629, -2, and -4 consists of a photo­ transistor op tically coupled to a g alliu m arsenide


    OCR Scan     		PDF TLP629 TLP629-2 TLP629-4 TLP629, TLP629-2, TLP629â TLP629-4 150mA

    TLP555

    Abstract: TLP558 1S1588 E67349
    Text: TOSHIBA TLP558 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC TLP558 ISOLATED BUS DRIVER HIGH SPEED LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP558 consists of a G a A iA s lig h t em itting diode and


    OCR Scan     		PDF TLP558 TLP558 000V//Â TLP555 1S1588 1S1588 E67349

    m5009

    Abstract: pnp high emitter base voltage 15 volt 2N5009 2N5330 2N5006 2N5007 2N5008 E131 E134 SFT8200
    Text: SOLID STATE DEVICES INC |fl3bb011 0002130 h | 1EE D T - ^3 -X3 2N5007 AND 2 N5009 10 AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE s S a S I E r l l 14830 Valley View Avenue La Mirada, California 90638


    OCR Scan     		PDF fl3bb011 2N5007 M5009 2N5006 2N5008 pnp high emitter base voltage 15 volt 2N5009 2N5330 2N5007 2N5008 E131 E134 SFT8200

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP559 TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G a A M s IRED & PHOTO IC LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The T O S H IB A TLP559 consists of a G aA€A s high-output lig h t


    OCR Scan     		PDF TLP559 TLP559 2500Vrms

    p733

    Abstract: toshiba TLP tip733
    Text: TOSHIBA TLP 733JL P 734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P733 TI P73ZL OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY The T O S H IB A TLP733 and TLP734 consist of a photo-transistor op tically coupled to a gallium arsenide infrared em itting diode in a


    OCR Scan     		PDF 733JL P73ZL TLP733 TLP734 UL1577, E67349 EN60065 EN60950 11-7A8 p733 toshiba TLP tip733

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP624,TLP624-2,TLP624-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP624, TLP624-2, TLP624-4 PRO GRAM M ABLE CONTROLLERS AC / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP624, -2 and -4 consist of a g alliu m arsenide infrared em itting diode op tically coupled to a photo-transistor.


    OCR Scan     		PDF TLP624 TLP624-2 TLP624-4 TLP624, TLP624-2, TLP624-4

    toshiba TLP

    Abstract: ic vrm
    Text: TOSHIBA TLP 733JL P 734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P 7 3 3 TI P73ZL OFFICE MACHINE. U n it in mm HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. The T O S H IB A TLP733 and TLP734 consist of a photo-transistor op tically coupled to a gallium arsenide infrared em itting diode in a


    OCR Scan     		PDF 733JL P73ZL TLP733 TLP734 UL1577, E67349 EN60065 EN60950 11-7A8 toshiba TLP ic vrm

    da qz transistor

    Abstract: transistor qz n channel mosfet 500 mA 400 v N and P MOSFET
    Text: A dvanced I / I 1 lia Z S S / L in e a r ALD1107/ALD1117 D e v ic e s , I n c . QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance­ ment mode matched MOSFET transistor arrays intended fora broad range


    OCR Scan     		PDF ALD1107/ALD1117 ALD1107/ALD1117 ALD1106 ALD1116 ALD1101 ALD1103) ALD1102 da qz transistor transistor qz n channel mosfet 500 mA 400 v N and P MOSFET

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    TLP555

    Abstract: 1S1588 TLP558 TOSHIBA TLP558 E67349
    Text: TO SH IBA TLP558 TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO IC TLP558 ISOLATED BUS DRIVER HIGH SPEED LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP558 consists of a GaA€As ligh t em itting diode and


    OCR Scan     		PDF TLP558 TLP558 1000V7/Â TLP555 1S1588 TOSHIBA TLP558 E67349