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    TRANSISTOR RF C1213 Search Results

    TRANSISTOR RF C1213 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    TRANSISTOR RF C1213 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
    Text: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface


    OCR Scan     		20AWG, transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701 PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 PDF

    atc 17-33

    Abstract: atc 1733 860-960MHz
    Text: ERICSSON ^ PTF 10036 85 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 960 MHz. It is rated at 85 watts minimum output


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    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet
    Text: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output


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    CHARACTERISTIC OF TRANSISTOR C1213

    Abstract: transistor c1213 c1213 transistor transistor Rf C1213 G200
    Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization


    Original     		1-877-GOLDMOS 1301-PTF CHARACTERISTIC OF TRANSISTOR C1213 transistor c1213 c1213 transistor transistor Rf C1213 G200 PDF

    atc 17-33

    Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733
    Text: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure


    Original     		1-877-GOLDMOS 1301-PTF atc 17-33 transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733 PDF

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213
    Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full


    Original     		1-877-GOLDMOS 1522-PTF transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213 PDF

    S12237-02P

    Abstract: No abstract text available
    Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36


    Original     		PDF

    Transistor C1173

    Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
    Text: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		inR214 R0402 R0603 3314J Transistor C1173 L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161 PDF

    MC789P

    Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
    Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series


    OCR Scan     		C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P PDF

    SFH-1212

    Abstract: SFH-1212A smd transistor p3n sony chemical fuse Power management sony laptop circuit diagram smd schottky diode s4 SOD-123 bq78PL116 r25 transistor NTS4001NT1G bq76PL102
    Text: bq78PL116 SLUSAB8B – OCTOBER 2010 – REVISED FEBRUARY 2011 www.ti.com PowerLAN Master Gateway Battery Management Controller With PowerPump™ Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 • 23 • • • • • • • • •


    Original     		bq78PL116 16-Series-Cell bq76PL102 SFH-1212 SFH-1212A smd transistor p3n sony chemical fuse Power management sony laptop circuit diagram smd schottky diode s4 SOD-123 r25 transistor NTS4001NT1G PDF

    SFH-1212

    Abstract: SFH-1212A transistor c1213 SOT R23 pwm e-bike
    Text: bq78PL116 www.ti.com SLUSAB8A – OCTOBER 2010 – REVISED OCTOBER 2010 PowerLAN Master Gateway Battery Management Controller With PowerPump™ Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 • 23 • • • • • • • • •


    Original     		bq78PL116 16-Series-Cell bq76PL102 SFH-1212 SFH-1212A transistor c1213 SOT R23 pwm e-bike PDF

    c828 npn transistor datasheet

    Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
    Text: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		intellecR214 R0402 R0603 3314J c828 npn transistor datasheet FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet PDF

    MOSFET 2301

    Abstract: cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093
    Text: M C N 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Date 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 Page


    Original     		LVDS/12/15) C1232 C1230 470pF PR412 PR169 PR168 PC175 PC174 C1309 MOSFET 2301 cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093 PDF

    PDTA144E

    Abstract: CXD98 H0068NL R1453 Diode C1280 TPS2231 a6019 MAX8734AEEI T A6806 R1318
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Rev. 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00


    Original     		S-VI2/15) C1232 C1230 470pF PR412 PR169 PR168 PC175 PC174 C1309 PDTA144E CXD98 H0068NL R1453 Diode C1280 TPS2231 a6019 MAX8734AEEI T A6806 R1318 PDF