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    TRANSISTOR REVERS CHARACTERISTIC Search Results

    TRANSISTOR REVERS CHARACTERISTIC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR REVERS CHARACTERISTIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BPRN00563

    Abstract: RB160M fairchild diode smd code Forward Surge Current Ifsm Max 30A
    Text: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR


    Original     		PDF RB160M-90 OD-123 WEE/AK0049TZ BPRN00563 08-Jul-2011 BPRN00563 RB160M fairchild diode smd code Forward Surge Current Ifsm Max 30A

    ir igbt 1200V 40A

    Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
    Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package


    Original     		PDF IRGPS40B120U Super-247 20KHz Super-247TM 5M-1994. O-274AA ir igbt 1200V 40A igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package

    L9351

    Abstract: No abstract text available
    Text: L9351 HIGH SIDE DRIVER . . . . ADVANCE DATA LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE VERY LOW QUIESCENT CURRENT 30mA max NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CURRENT SHORT CIRCUIT PROTECTION


    Original     		PDF L9351 L9351

    L9351

    Abstract: No abstract text available
    Text: L9351 HIGH SIDE DRIVER . . . . ADVANCE DAT A LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE VERY LOW QUIESCENT CURRENT 30mA max NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CURRENT SHORT CIRCUIT PROTECTION


    Original     		PDF L9351 L9351

    IRGP4062DPBF

    Abstract: IRGP4062D
    Text: IRGP4062-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of the parts tested for ILM 


    Original     		PDF IRGP4062-EPbF O-247AD O-247AD J-STD-020D) AEC-Q101-002) AEC-Q101-001) AEC-Q101-005) IRGP4062DPBF IRGP4062D

    30 rpm geared DC motor datasheet

    Abstract: PD4-I5709X3208 pd4i57 10 rpm geared DC motor Nanotec Electronic Nanotec Electronic GmbH UL LED DRIVER nanotec db optocoupler with encoder for speed control stepper motor stall current input output phase
    Text: PDx-I Manual Version 2.1 Plug & Drive Series PDx-I -1- PDx-I 2004 Nanotec Electronic GmbH Gewerbestr. 11 85652 Landsham / Pliening Tel.: Fax: (089) 900 686-0 (089) 900 686-50 Internet: www.nanotec.com All rights reserved. This documentation should be carefully read before the installation and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C IC = 40A, TC = 100°C tSC ≥ 5µs, TJ max = 175°C C C G GC E VCE(on) typ. = 1.60V @ IC = 24A n-channel G Gate Applications • Inverters • UPS • Welding E E GC TO-247AD IRGP4640-EP


    Original     		PDF IRGP4640PbF IRGP4640-EPbF O-247AD IRGP4640-EP O-247AC JESD22-A114) JESD22-C101)

    Untitled

    Abstract: No abstract text available
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418.

    12v 15A dc motor speed controller circuit diagram

    Abstract: laser disk spindle motor controller chart polygon mirror motor DTC24 AN8245 8 pin regulater ic
    Text: ICs for Motor AN8245K, AN8245SCR Laser Disk Spindle Motor Controller • Overview AN8245K The AN8245K and AN8245SCR are speed control drive ICs of the brushless motors by means of the 3-phase fullwave current drive system. They are suitable for controlling/driving the laser disk spindle motors, LBP polygon


    Original     		PDF AN8245K, AN8245SCR AN8245K AN8245SCR AN8245K 12v 15A dc motor speed controller circuit diagram laser disk spindle motor controller chart polygon mirror motor DTC24 AN8245 8 pin regulater ic

    Untitled

    Abstract: No abstract text available
    Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage


    OCR Scan     		PDF KSC2786 600MHz 100MHz 100MHz 0D24fll5

    transistor revers characteristic

    Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol


    OCR Scan     		PDF KSC1674 600MHz 100MHz D0S474t, E22KO transistor revers characteristic NF005 KSC1674 QDS4744 TRANSISTOR 100MHz

    IF8A

    Abstract: 16812
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 “ “ TO SH IB A 99D <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR FIELD 16812 EFFECT D T -3 9 -1 3 TRANSISTOR Y T F *4 4 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSH H I G H SPEED, H I G H C U R R E N T S W I T C H I N G A P P L I CATIONS.


    OCR Scan     		PDF DT-39-13 250liA 250uA 00A/us IF8A 16812

    bfr14a

    Abstract: Transistor BFR14a
    Text: BFR14A NPN Silicon planar microwave transistor B F R 1 4 A is an expitaxial N P N silicon planar m icrow ave transistor. Due to its low noise figure high am plification and low distortion it is particularly suitable for use in low -n oise pre-stages, broad-band, IF and radar amplifiers up to 5 G H z as w ell as


    OCR Scan     		PDF BFR14A Q62702-F416 BFR14A Transistor BFR14a

    DIODE T53

    Abstract: diode sg 35 transistor marking p3 T53 diode STTA212S
    Text: £Z7 ^ 7# SGS-THOMSON M » iL iO T ( s iO O S S TTA 212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av ) 2A V rrm 1200V trr (typ) 65ns Vf PRELIMINARY DATASHEET 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­


    OCR Scan     		PDF

    HFA06TB60

    Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
    Text: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi


    OCR Scan     		PDF HFA08TB60 HFA06TB60 00A/fiS diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32

    HFA25PB60

    Abstract: Fast Rec Rect CL50 27ac
    Text: P D -2 .3 3 8 international im i Rectifier HEXFRED Provisional Data Sheet HFA25PB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics V •FfAV 25 A »II w r / oo _ Qrr typ) 112 nC 10 A 250 1.7 Alus Ir r m di(rec)M/dt (tvp)


    OCR Scan     		PDF HFA25PB60 00A/JXS Fast Rec Rect CL50 27ac

    Untitled

    Abstract: No abstract text available
    Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic


    OCR Scan     		PDF KSC1674 600MHz 100MHz 100MHz

    BF 234 transistor

    Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
    Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz


    OCR Scan     		PDF KSC2786 600MHz -22dB 100MHz O-92S KSC2786 100MHz T-31-17 BF 234 transistor transistor RF POWER TRANSISTOR 100MHz samsung tv

    qm150hy-h

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES i QM150HY-H j HIGH POWER SWITCHING USE ! INSULATED TYPE | QM150HY-H • Ic • Vcex Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain.75


    OCR Scan     		PDF QM150HY-H QM150HY-H E80276 E80271

    IDEC

    Abstract: 25CC 2SK3445 v1h diode
    Text: TOSHIBA 25K3445 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE rc-MOS V 2 S K 3445 TENTATIVE INDUSTRIAL HIGH SPEED SWITCHING APPLICATIONS CHOPPE R REGULA [ 10N DC-DC CO NVtRT ER AND MO TOR DRIVE APPLICAT3G NS. * Low Drain - Squroe ON Resistance r


    OCR Scan     		PDF 25K3445 2SK3445 DS-10V. IDEC 25CC 2SK3445 v1h diode

    Transistor SJ 2517

    Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a
    Text: 17E D TELEFUNKEN ELECTRONIC • ODD^SbS BUV70 ■¡nyilFttJlMlM electronic Cr*Miv«■fcchnotogte* T -33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies features: • Implantation • • High reverse voltage • Triple diffusion


    OCR Scan     		PDF BUV70 T-33-13 T0126 15A3DIN Transistor SJ 2517 transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a

    MG300N1

    Abstract: MG300N1US1 pj 889 diode mg300n
    Text: GTR MODULE SILICON N CHANNEL IGBT MG300N1US1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=l.Oys Max. trr=0-5|is(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) .Enhancement-Mode . The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG300N1US1 MG300N1 MG300N1US1 pj 889 diode mg300n

    L9350

    Abstract: S-925A
    Text: SGS -THOMSON k7 È ü*[R } o [ILi(g¥^(Q )res L9350 HIGH SIDE DRIVER ADVANCE DATA • ■ ■ ■ ■ LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CUR­


    OCR Scan     		PDF L9350 L9350 100/A S-925A

    TEA-1035

    Abstract: TEA 1035 2SK1749 tea1035 aakm IEM209
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1749 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1749 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PACKAGE DIMENSIONS lin millimeters FEATURES


    OCR Scan     		PDF 2SK1749 2SK1749 IEM209) TEA-1035 TEA 1035 tea1035 aakm IEM209