2028
Abstract: KSR-2028-000 marking RA4 sot23 13001 TRANSISTOR transistor 2028 SRA2204S transistor ra4
Text: SRA2204S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2204S
OT-23
KSR-2028-000
-10mA
-10mA,
2028
KSR-2028-000
marking RA4 sot23
13001 TRANSISTOR
transistor 2028
SRA2204S
transistor ra4
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marking RA4
Abstract: No abstract text available
Text: SRA2204S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2204S
SRA2204S
OT-23
KSR-2028-001
KSR-2028-001
marking RA4
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marking RA4
Abstract: No abstract text available
Text: SRA2204SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2204SF
SRA2204SF
OT-23F
KSR-2012-001
KSR-2012-001
marking RA4
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SRA2204SF
Abstract: No abstract text available
Text: SRA2204SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2204SF
OT-23F
KSR-2012-000
-10mA
-10mA,
SRA2204SF
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SRA2204SF
Abstract: No abstract text available
Text: SRA2204SF PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRA2204SF
OT-23F
KSD-R5C030-000
SRA2204SF
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SRA2204S
Abstract: No abstract text available
Text: SRA2204S PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process
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SRA2204S
OT-23
KSD-R5C029-000
SRA2204S
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104BLM
Abstract: THC63LVDF84A NL128102BC23-03 53780-2090 Molex ba7 transistor NL128102BC 154LHS04
Text: DATA SHEET TFT COLOR LCD MODULE NL128102BC23-03 39 cm 15.4 Inches , 1280 x 1024 Pixels, 16,194,277 Colors, LVDS Interface, Wide Viewing Angle, High Luminance DESCRIPTION The NL128102BC23-03 is a TFT (thin film transistor) active-matrix color liquid crystal display (LCD) comprising
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NL128102BC23-03
NL128102BC23-03
THC63LVDF84A,
DE0203
104BLM
THC63LVDF84A
53780-2090 Molex
ba7 transistor
NL128102BC
154LHS04
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E170632
Abstract: 181PW051 NEC E170632 NL128102AC28-07 THC63LVDF84A 15 inch NEC lcd backlight inverter ROHM Electronics THC63LVDF83A CSA-C22 ba7 transistor
Text: DATA SHEET TFT COLOR LCD MODULE NL128102AC28-07 46 cm 18.1 inches , 1280 x 1024 pixels, 16,777,216 colors, LVDS interface, Ultra-wide viewing angle DESCRIPTION The NL128102AC28-07 is a TFT (thin film transistor) active-matrix color liquid crystal display (LCD) comprising
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NL128102AC28-07
NL128102AC28-07
NL128102AC2807
THC63LVDF84Aly
DE0202
E170632
181PW051
NEC E170632
THC63LVDF84A
15 inch NEC lcd backlight inverter
ROHM Electronics
THC63LVDF83A
CSA-C22
ba7 transistor
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201BLM02
Abstract: mark Gb5 201PW021 circuit diagram flourescent tube thc63lvdf83a ATI 216 lvds connector 14 pin 1.0mm 1280Y TC4-19 trf 640 a
Text: PRELIMINARY DATA SHEET TFT COLOR LCD MODULE NL128102AC31-02 51 cm 20.1 inches , 1280 ´ 1024 pixels, 8bit/color, Incorporated backlight and Inverter Ultra wide viewing angle DESCRIPTION NL128102AC31-02 is a TFT (Thin Film Transistor) active matrix color liquid crystal display (LCD) comprising amorphous
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NL128102AC31-02
NL128102AC31-02
THC63LVDF84A
201BLM02
mark Gb5
201PW021
circuit diagram flourescent tube
thc63lvdf83a
ATI 216
lvds connector 14 pin 1.0mm
1280Y
TC4-19
trf 640 a
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NL10276BC26
Abstract: b0741 NL10276BC26-01 D1022 B7410036 TFT LCD TV data driver IC
Text: DATA SHEET TFT COLOR LCD MODULE NL10276BC26-01, 02 34 cm 13.3 TYPE , 1024 x 768 PIXELS, 262144 COLORS, INCORPORATED ONE LAMP/EDGE-LIGHT TYPE BACKLIGHT DESCRIPTION NL10276BC26-01, 02 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module
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NL10276BC26-01,
DS90CF562,
10276BC26-02
ES2228421
A100100100100
NL10276AC28-02
B7410036
A102492546011
LZ-20P-SL-SMT
NL10276BC26
b0741
NL10276BC26-01
D1022
TFT LCD TV data driver IC
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SRA2204S
Abstract: No abstract text available
Text: SRA2204SF PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion OUT • I nt erface circuit and driver circuit applicat ion OUT IN Features IN • Wit h built- in bias resist ors • Sim plify circuit design • Reduce a quant it y of part s and
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SRA2204SF
KSD-R5C030-000
SRA2204S
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Untitled
Abstract: No abstract text available
Text: SRA2204S PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion OUT • I nt erface circuit and driver circuit applicat ion OUT Features IN • Wit h built- in bias resist ors • Sim plify circuit design • Reduce a quant it y of part s and
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SRA2204S
KSD-R5C029-000
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RA45H4452M
Abstract: RA45H4452M-101 transistor marking zg
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA45H4452M
440-520MHz
RA45H4452M
45-watt
520-MHz
RA45H4452M-101
transistor marking zg
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50ND2
Abstract: RA45H4047M RA45H4047M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4047M
400-470MHz
RA45H4047M
45-watt
470-MHz
50ND2
RA45H4047M-101
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hatfield attenuator
Abstract: MITSUBISHI RF module RF MOSFET MODULE RF MOSFET MODULE RA45H4452M RA45H4452M RA45H4452M-01 RA45H4452M-E01 circuit diagram power amplifier 450w d408
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M 440-520MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA45H4452M
440-520MHz
RA45H4452M
45-watt
520-MHz
hatfield attenuator
MITSUBISHI RF module
RF MOSFET MODULE
RF MOSFET MODULE RA45H4452M
RA45H4452M-01
RA45H4452M-E01
circuit diagram power amplifier 450w
d408
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RA45H4047M
Abstract: RA45H4047M-01 RA45H4047M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M 400-470MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4047M
400-470MHz
RA45H4047M
45-watt
470-MHz
RA45H4047M-01
RA45H4047M-E01
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RA45H4045MR
Abstract: RA45H4045MR-01 RA45H4045MR-E01 transistor MOSFET 924 ON
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR 400-450MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4045MR
400-450MHz
RA45H4045MR
45-watt
450-MHz
RA45H4045MR-01
RA45H4045MR-E01
transistor MOSFET 924 ON
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RA45H4047M
Abstract: RA45H4047M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4047M
400-470MHz
RA45H4047M
45-watt
470-MHz
RA45H4047M-01
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RA45H4045MR
Abstract: RA45H4045MR-01 RF POWER amplifier 10 watt
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4045MR
400-450MHz
RA45H4045MR
45-watt
450-MHz
RA45H4045MR-01
RF POWER amplifier 10 watt
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RA45H4452M
Abstract: RA45H4452M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA45H4452M
440-520MHz
RA45H4452M
45-watt
520-MHz
RA45H4452M-01
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d408
Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
d408
DD 128 D transistor
GG13
LT 7212
MHz-860
RA45H7687M1-101
DD 128 transistor
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s3331
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors
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LXEE18300X
S3331
LXE18300X
350fll
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Transistor Equivalent list
Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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OT439A
LXE16350X
RA439
Transistor Equivalent list
Transistor AND DIODE Equivalent list
capacitor feed-through
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bt 109 transistor
Abstract: CD493 RA444
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 ns/10% • Internal input and output prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors
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ns/10%
MX1011B700Y
CD493
bt 109 transistor
CD493
RA444
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