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    TRANSISTOR R57 Search Results

    TRANSISTOR R57 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j 6815 transistor

    Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS

    TRANSISTOR J 6815 EQUIVALENT

    Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754

    transistor marking R57 ghz

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz

    transistor marking R57 ghz

    Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800

    Untitled

    Abstract: No abstract text available
    Text: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays


    Original     		PDF MAX17102 450mA MAX17102

    Untitled

    Abstract: No abstract text available
    Text: MP3393 8-String Step-Up White LED Driver with External Transistor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3393 is a step-up controller with 8 current channel sources designed to power WLED backlights for large LCD panels. • • •


    Original     		PDF MP3393 MP3393 202mV MP3393â SOIC28

    Untitled

    Abstract: No abstract text available
    Text: 19-4706; Rev 0; 7/09 MAX17100 Evaluation Kit The MAX17100 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The


    Original     		PDF MAX17100 500mA regulato00 MAX17100

    LTC1681

    Abstract: 72V DC to 12V dC converter circuit diagram LT1698 FZT690 buck converter vout 100v 48V to 12V buck transformer LT1006S8 Si4450 6 pin pulse transformer BAT54 on semi
    Text: DESIGN FEATURES LT1681 and LTC1698 Team Up to Provide a Complete Solution for 48V Input, 2-Transistor Synchronous by Kurk Mathews Forward Converters While the need for 48V input networking equipment grows, logic voltages continue to fall well below 5V. Designing an efficient supply to


    Original     		PDF LT1681 LTC1698 LT1681/LTC1698 V/20A 250kHz LTC1681 72V DC to 12V dC converter circuit diagram LT1698 FZT690 buck converter vout 100v 48V to 12V buck transformer LT1006S8 Si4450 6 pin pulse transformer BAT54 on semi

    TRANSISTOR R57

    Abstract: 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A
    Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 20 GHz ICBO PARAMETERS AND CONDITIONS TYP MAX 1000 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000 hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA


    Original     		PDF NE664M04 2SC5754 TRANSISTOR R57 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A

    Untitled

    Abstract: No abstract text available
    Text: 19-4354; Rev 0; 10/08 MAX17108 Evaluation Kit The MAX17108 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17108 10-channel, high-voltage level-shifting scan driver for active-matrix, thin-film transistor (TFT) liquidcrystal display (LCD) applications.


    Original     		PDF MAX17108 10-channel, 200mA MAX17108

    TRANSISTOR R57

    Abstract: free ic 339 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2 NE678M04
    Text: MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR NE664M04 FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 The NE664M04 is fabricated using NEC's state-of-the-art


    Original     		PDF NE664M04 OT-343 NE664M04 TRANSISTOR R57 free ic 339 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04-T2 NE678M04

    2SC5754

    Abstract: DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A NE678M04 NE68019 S21E
    Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 NEC's NE664M04 is fabricated using NEC's state-of-the-art


    Original     		PDF NE664M04 OT-343 NE664M04 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04-T2-A NE678M04 NE68019 S21E

    NE664M04

    Abstract: 0810 GL
    Text: PRELIMINARY DATA SHEET MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR NE664M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1 1.25 0.650.65 +0.01 +0.30-0.05 leads 1, 3 and ,4


    Original     		PDF NE664M04 OT-343 NE664M04 NE663M04 GSM1800) NE678M04 0810 GL

    TRANSISTOR R57

    Abstract: 0827 ne664 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2
    Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 NEC's NE664M04 is fabricated using NEC's state-of-the-art


    Original     		PDF NE664M04 OT-343 NE664M04 TRANSISTOR R57 0827 ne664 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04-T2

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    motorola AN1308

    Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100

    ELMWOOD SENSORS

    Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


    Original     		PDF STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


    Original     		PDF STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor

    kia7805p

    Abstract: dg1u dg1u relay 104j capacitor C517 transistor KIA7806P carbon resistor KIA7815PI KIA7806PI t1.6a 250v
    Text: Quality Uncompromised Technical Manual SURROUND SOUND PROCESSOR RSP-1066 Table of Contents Parts Upgrade Procedure.12


    Original     		PDF RSP-1066 kHF902 T315mA/250V) X-1330-04 CP404 CN903 T2A/250V) CP407 CN602 CP602 kia7805p dg1u dg1u relay 104j capacitor C517 transistor KIA7806P carbon resistor KIA7815PI KIA7806PI t1.6a 250v

    BC547 SMD-Typ

    Abstract: bc547 smd transistor 3 pin TIP122 smd stv2118 STV2112 BC547 STV2118A Transistor morocco tip122 crt tv flyback transformer pin connections BC547 TRANSISTOR SMD
    Text: STV2145 I2C BUS CONTROLLED EAST-WEST AND VERTICAL INTERFACE . . . . . . . INTEGRATED VERTICAL SAWTOOTH GENERATOR WITH AMPLITUDE CONTROL LOOP 50Hz - 60Hz INTERLACE MODE INTRINSICALLY CONTROLLED BY STV2118A VERTICAL SIZE CORRECTION (BREATHING) TO ADAPT DEFLECTION SENSITIVITY


    Original     		PDF STV2145 STV2118A BC547 SMD-Typ bc547 smd transistor 3 pin TIP122 smd stv2118 STV2112 BC547 STV2118A Transistor morocco tip122 crt tv flyback transformer pin connections BC547 TRANSISTOR SMD

    stv2118a

    Abstract: BC547 SMD-Typ 3 pin TIP122 smd TIP122 smd bc547 smd transistor Transistor morocco tip122 BC547 smd crt tv flyback transformer pin connections SMD BC547 stv2118
    Text: STV2145 I2C BUS CONTROLLED EAST-WEST AND VERTICAL INTERFACE . . . . . . . INTEGRATED VERTICAL SAWTOOTH GENERATOR WITH AMPLITUDE CONTROL LOOP 50Hz - 60Hz INTERLACE MODE INTRINSICALLY CONTROLLED BY STV2118A VERTICAL SIZE CORRECTION (BREATHING) TO ADAPT DEFLECTION SENSITIVITY


    Original     		PDF STV2145 STV2118A stv2118a BC547 SMD-Typ 3 pin TIP122 smd TIP122 smd bc547 smd transistor Transistor morocco tip122 BC547 smd crt tv flyback transformer pin connections SMD BC547 stv2118

    KSR1107

    Abstract: KSR2107 t313
    Text: SAMSUNG SEMICONDUCTOR INC 14E O | 714,4145 0007123 7 | PNP EPITAXIAL SILICON TRANSISTOR KSR2107 SWITCHING APPLICATION T-31-'3 Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit . • Built in bias Resistor (R,=22KO, R,=47KO)


    OCR Scan     		PDF KSR2107 KSR1107 OT-23 -10/M, -10mA, KSR1107 KSR2107 t313