LDA110
Abstract: optocoupler bi-directional
Text: LDA110 Optocoupler, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1
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LDA110
LDA110
100mA
3750Vrms
E76270
DS-LDA110-R06
optocoupler bi-directional
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LDA111
Abstract: No abstract text available
Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1
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LDA111
LDA111
100mA
3750Vrms
E76270
DS-LDA111-R06
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LDA100
Abstract: LDA100STR B0907
Text: LDA100 Optocoupler, Bidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Units VP % V mA Description The LDA100 is a bidirectional-input optocoupler
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LDA100
LDA100
3750Vrms
DS-LDA100-R06
LDA100STR
B0907
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LDA101
Abstract: No abstract text available
Text: LDA101 Optocoupler, Unidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Units VP % V mA Description The LDA101 is a unidirectional-input optocoupler
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LDA101
LDA101
3750Vrms
DS-LDA101-R06
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very simple walkie talkie circuit diagram
Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
very simple walkie talkie circuit diagram
blf278 models
walkie talkie circuit diagram
simple walkie talkie circuit diagram
SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6
BF245c spice model
smd TRANSISTOR code marking 8K
MOBILE jammer GSM 1800 MHZ
BSS83 spice model
smd TRANSISTOR code marking 7k sot23
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double TRANSISTOR SMD MARKING CODE mc
Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
double TRANSISTOR SMD MARKING CODE mc
walkie talkie circuit diagram
very simple walkie talkie circuit diagram
smd TRANSISTOR code marking 8K
smd m5 transistor 6-pin
walkie talkie Transceiver IC
mesfet lnb
toshiba smd marking code transistor
blf574
BLF578
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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Motorola transistor smd marking codes
Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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Motorola transistor smd marking codes
Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become
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schematic diagram tv sony 21 trinitron
Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV
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KV-EF34M80
RM-951
SCC-U28D-A
NA324-M3
A80LPD10X)
SBX3005-01
RM-951)
schematic diagram tv sony 21 trinitron
cxa2139s
CXA2130S
IC cxa2139s
ic CXA2130S
C3807 transistor datasheet
sony ic cxa2130s
free CXA2139S
c3807 power transistor
STV5112
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 DC, pro Zweig / per arm 0,16 pro B au stein / per module 0,03 RthCK pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties
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FF500
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transistor KF
Abstract: No abstract text available
Text: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,175 C/W Rthjc DC, pro Zweig / per arm
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125-C,
transistor KF
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ODD1173
Abstract: FF200R06KF2 FF200R06KF FF500 15fis Scans-0031044 FF200R06
Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 0,16 DC, pro Zweig / per arm 0,03 pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties V CES Maximum rated values
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00R600
FF20DN
FF500
ODD1173
FF200R06KF2
FF200R06KF
15fis
Scans-0031044
FF200R06
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties
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FF2MR06KF3.
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties
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ZWR06KF3/5
3MQ32T?
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vqe 24 d
Abstract: VQE 24 vqe 14 vqe 24 e VQE 13 we vqe 24 d
Text: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm al properties Therm ische Eigenschaften 0,175 C/W Rthjc DC, pro Baustein / per module 0,35 °C/W DC, pro Zweig / per arm 0,06 “C/W RthCK pro B a u ste in /p e r module
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FF7SR06KF2IÃ
125-C,
vqe 24 d
VQE 24
vqe 14
vqe 24 e
VQE 13
we vqe 24 d
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kf 202 transistor
Abstract: No abstract text available
Text: FF 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V qes Maximum rated values 600 V 100 A le Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,140 °C/W 0,280 C/W DC, pro Zweig / per arm
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12EFC,
kf 202 transistor
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KF 35 transistor
Abstract: No abstract text available
Text: FF 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 100 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,140 °C/W 0,280 C/W DC, pro Zweig / per arm
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LN800
Abstract: C2E1 F400 diode f400
Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties
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D0DD25fl
34D32CI7
LN800
C2E1
F400
diode f400
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2SK49
Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
Text: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,
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SC-43
2SK49
JA BJT
P514
t430 transistor
transistor T600
p745 h
me 218l
p745 Transistor
F030
P460
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