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    TRANSISTOR R05 Search Results

    TRANSISTOR R05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R05 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    LDA210

    Abstract: LDA210S
    Text: LDA210 Dual Optocouplers, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units


    Original     		LDA210 LDA210 100mA 3750Vrms E7627 DS-LDA210-R05 LDA210S PDF

    LDA212

    Abstract: No abstract text available
    Text: LDA212 Dual Optocouplers, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units


    Original     		LDA212 LDA212 100mA 3750Vrms E7627 DS-LDA212-R05 PDF

    LDA211

    Abstract: LDA211S
    Text: LDA211 Dual Optocouplers, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units


    Original     		LDA211 LDA211 100mA 3750Vrms DS-LDA211-R05 LDA211S PDF

    LDA203

    Abstract: No abstract text available
    Text: LDA203 Dual Optocouplers, Unidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP


    Original     		LDA203 LDA203 100mA 3750Vrms E76270 DS-LDA203-R05 PDF

    LDA200

    Abstract: No abstract text available
    Text: LDA200 Dual Optocouplers, Bidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP


    Original     		LDA200 LDA200 100mA 3750Vrms E76270 DS-LDA200-R05 PDF

    Untitled

    Abstract: No abstract text available
    Text: LDA201 Dual Optocouplers, Unidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP


    Original     		LDA201 LDA201 100mA 3750Vrms E76270 DS-LDA201-R05 PDF

    Untitled

    Abstract: No abstract text available
    Text: LDA101 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Description Units VP % V mA The LDA101 is a unidirectional-input optocoupler


    Original     		LDA101 LDA101 3750Vrms DS-LDA101-R05 PDF

    EIA-481-2

    Abstract: J-STD-033 LDA101 LDA101S LDA101STR
    Text: LDA101 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Description Units VP % V mA The LDA101 is a unidirectional-input optocoupler


    Original     		LDA101 LDA101 3750Vrms DS-LDA101-R05 EIA-481-2 J-STD-033 LDA101S LDA101STR PDF

    LDA100STR

    Abstract: EIA-481-2 J-STD-033 LDA100 LDA100S
    Text: LDA100 Optocoupler, Bidirectional Input Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Description Units VP % V mA The LDA100 is a bidirectional-input optocoupler


    Original     		LDA100 LDA100 3750Vrms DS-LDA100-R05 LDA100STR EIA-481-2 J-STD-033 LDA100S PDF

    CPC1001N

    Abstract: No abstract text available
    Text: CPC1001N Optocoupler: Unidirectional Input, Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current Rating 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with


    Original     		CPC1001N CPC1001N 100mA 1500Vrms E76270 49410ight. DS-CPC1001N-R05 PDF

    irf44z

    Abstract: 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics
    Text: AN1520/D HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications http://onsemi.com Prepared by: Scott Deuty, Applications Engineer APPLICATION NOTE INTRODUCTION A new technology, HDTMOS, was recently introduced which addresses the needs of today’s power transistor users.


    Original     		AN1520/D r14525 irf44z 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics PDF

    JESD-625

    Abstract: EIA-481-2 J-STD-033 LDA111 LDA111S LDA111STR 6-Pin DIP Phototransistor Output Optocoupler
    Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA111 is a unidirectional-input optocoupler with


    Original     		LDA111 LDA111 100mA 3750Vrms DS-LDA111-R05 JESD-625 EIA-481-2 J-STD-033 LDA111S LDA111STR 6-Pin DIP Phototransistor Output Optocoupler PDF

    Untitled

    Abstract: No abstract text available
    Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA111 is a unidirectional-input optocoupler with


    Original     		LDA111 LDA111 100mA 3750Vrms DS-LDA111-R05 PDF

    PA1522H

    Abstract: MOS FET Array
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR P A 1 5 2 2 N-CHAIMIMEL POWER MOS FET ARRAY SWITCHING TYPE


    OCR Scan     		uPA1522 PA1522H MOS FET Array PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220 PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    NEC .PA1400H

    Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
    Text: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7


    OCR Scan     		PA1428H 13X26X4 NEC .PA1400H PA1400H PA1428H TYA 0298 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400 PDF

    SMD TRANSISTOR MARKING P28

    Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
    Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes


    OCR Scan     		5962-R053-94. SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 PDF

    stk433-870

    Abstract: No abstract text available
    Text: Ordering number : ANDSTK433000NE Thick-Film Hybrid IC STK433-000N-E series 2-4ch class-AB Audio Power IC from 40W to 150W Overview The STK433-000N-E series is a hybrid IC designed to be used in from 40W to 150W x 2,3,4ch class AB audio power amplifiers. Application


    Original     		ANDSTK433000NE STK433-000N-E STK433-040N-E STK433-060N-E STK433-130N-E STK433-330N-E 120517JI/AS stk433-870 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIC Division TENTATIVE Thick-Film Hybrid IC STK433-000N-E series 2-4ch class-AB Audio Power IC from 40W to 150W Overview The STK433-000N-E series is a hybrid IC designed to be used in from 40W to 150W x 2,3,4ch class AB audio power amplifiers. Application


    Original     		STK433-000N-E STK433-040N-E STK433-060N-E STK433-130N-E /20Hz 20kHz) 120517JI/AS PDF