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    TRANSISTOR PO3 Search Results

    TRANSISTOR PO3 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3134M15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The medium power pulsed radar transistor device part number IB3134M15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz.


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    PDF IB3134M15 IB3134M15 IB3134M15-REV-NC-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH45 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor device part number IB3135MH45 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C


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    PDF IB3135MH45 IB3135MH45 IB3135MH45-REV-NC-DS-REV-NC

    IB3134M25

    Abstract: No abstract text available
    Text: Part Number: Integra IB3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB3134M25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C


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    PDF IB3134M25 IB3134M25 IB3134M25-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C


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    PDF IB2731MH25 IB2731MH25 IB2731MH25-REV-NC-DS-REV-D

    TB9101FNG

    Abstract: h-bridge circuit diagram dumper
    Text: TENTATIVE TB9101FNG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TB9101FNG 2ch H-Bridge driver for DC Brushed Motor TB9101FNG is a 2ch H-bridge driver which is designed specifically for Automotive. 2ch DMOS transistor are built-in for directly driving small DC Brushed motor. It is each contain two


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    PDF TB9101FNG TB9101FNG h-bridge circuit diagram dumper

    TRANSISTOR JC

    Abstract: STK400-490 FL 210 transistor
    Text: Ordering number:ENN5247 Thick Film Hybrid IC STK400-490 3ch AF Power Amplifier Split Power Supply (25W + 50W + 25W, THD = 0.4%) Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multichannel speaker applications. It comprises two 25W channels (left and right) and a 50W channel (center) in a single


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    PDF ENN5247 STK400-490 STK400-490 STK400- STK401- STK400-490] TRANSISTOR JC FL 210 transistor

    TRANSISTOR JC

    Abstract: No abstract text available
    Text: Ordering number:ENN5247 Thick Film Hybrid IC STK400-490 3ch AF Power Amplifier Split Power Supply (25W + 50W + 25W, THD = 0.4%) Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multichannel speaker applications. It comprises two 25W channels (left and right) and a 50W channel (center) in a single


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    PDF ENN5247 STK400-490 STK400-490 STK400- STK401- TRANSISTOR JC

    TR4943

    Abstract: DIP42S LC66P408 QIP48E R4944A
    Text: Ordering number:ENN3492 CMOS IC LC66P408 4-bit Microcontroller with Built-in PROM Overview Package Dimensions The LC66P408 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for prototyping and


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    PDF ENN3492 LC66P408 LC66P408 LC6640X 42-pin 48-pin TR4943 DIP42S QIP48E R4944A

    murata cst

    Abstract: TR4943 27128 ROM pin configuration
    Text: Ordering number:ENN3492 CMOS IC LC66P408 4-bit Microcontroller with Built-in PROM Overview Package Dimensions The LC66P408 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for prototyping and


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    PDF ENN3492 LC66P408 LC66P408 LC6640X 42-pin 48-pin murata cst TR4943 27128 ROM pin configuration

    358S

    Abstract: ic 358s 356a transistor TR4943 transistor p02 Murata CST 11,0
    Text: Ordering number:ENN3122A CMOS IC LC66P308 4-bit Microcontroller with Built-in PROM Overview Package Dimensions The LC66P308 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC663XX series mask ROM devices, making it ideal for prototyping and


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    PDF ENN3122A LC66P308 LC66P308 LC663XX 42-pin 48-pin 358S ic 358s 356a transistor TR4943 transistor p02 Murata CST 11,0

    358S

    Abstract: ic rom 27128 ic 358s RESONATOR 4MHZ R4944A TR4943 DIP42S LC66P308 QIP48E E408
    Text: Ordering number:ENN3122A CMOS IC LC66P308 4-bit Microcontroller with Built-in PROM Overview Package Dimensions The LC66P308 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC663XX series mask ROM devices, making it ideal for prototyping and


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    PDF ENN3122A LC66P308 LC66P308 LC663XX 42-pin 48-pin 358S ic rom 27128 ic 358s RESONATOR 4MHZ R4944A TR4943 DIP42S QIP48E E408

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


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    PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot

    transistor A 564

    Abstract: S-AV8 2-13B1A 564 transistor S-AU4
    Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the


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    PDF TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M67717 8 7 2 9 0 5 M H z , 3 W , FM FOR M O B ILE RADIO A P P LIC A TIO N DESCRIPTION M 67717 is a th ick film RF po w er m odule sp ecifically OUTLINE DRAWING Dimensions in mm designed fo r 8 7 2 ~ 9 0 5 M H z , 3W F M m obile radios.


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    PDF M67717

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57774 220 DESCRIPTION 2 2 5 M H z , 2 5 W , FM M O B ILE RADIO OUTLINE DRAWING The M57774 is a th ic k film RF power module o f 220 ~ 225MHz, 30W o u tp u t, specifically designed fo r 220 ~ 225MHz, 25W FM m obile radios. FEATURES


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    PDF M57774 M57774 225MHz,

    M37470E4-XXXSP

    Abstract: No abstract text available
    Text: M IT S U B IS H I M IC RO CO M PUTERS M 37470E4-XXXSP M 37470E8-XXXSP PROM VER SIO N of M 3 7 4 7 0 M 4 -X X X S P .M 3 7 4 7 0 M 8 -X X X S P DESCRIPTION The M37470E4-XXXSP is a single-chip microcomputer de­ signed with CMOS silicon gate technology. It is housed in a


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    PDF 37470E4-XXXSP 37470E8-XXXSP M37470E4-XXXSP 32-pin M37470M4-XXXSP 12VJoL

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I M IC RO CO M PUTERS 7470/7471 Group S IN G LE -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION The 7470/7471 group is a single-chip microcomputer de­ signed with CMOS silicon gate technology. It is housed in a 32-pin shrink plastic molded DIP. The M37471M2XXXSP/FP is a single-chip microcomputer designed with


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    PDF 32-pin M37471M2XXXSP/FP 42-pin 56-pin M37471M2-XXXtial 0024flb2

    RA30H3340M

    Abstract: No abstract text available
    Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H3340M Silicon MOS FET Power Amplifier, 330-400MHz 30W MOBILE RADIO PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS SUPPLY 3 V dd :DRAIN BIAS SUPPLY 4 Po :RF O U TPUT


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    PDF RA30H3340M 330-400MHz 25deg 50ohm RA30H3340M

    transistor w2a 40

    Abstract: xw4f 4500 microcomputer
    Text: MITSUBISHI MICROCOMPUTERS 4551 Group SINGLE-CHIP 4-BIT CMOS M ICROCOMPUTER DESCRIPTION • LCD control circuit Segment Common o u tp u


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    PDF 14-bit M34551E8-XXXFP, M34551E8FP PCA7414 transistor w2a 40 xw4f 4500 microcomputer

    tb6630

    Abstract: LC66356B DIP42S LC66354B LC66358A LC66358B QIP48E LC6650 3025B kbr-2.0ms
    Text: Ordering number : EN4677 CMOS LSI LC66354B, 66356B, 66358B No. 4677 Four-bit Single-Chip Microcontrollers On-Chip 4 K/6 K/8 K-byte ROM I Overview The LC66354B, LC66356B and LC66358B are 42-pin package four-bit CMOS microcontrollers that integrate on a sin g le ch ip all fu n ctio n s req u ired in a control


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    PDF EN4677 LC66354B, 66356B, 66358B LC66356B LC66358B 42-pin LC66358A LC66000 tb6630 DIP42S LC66354B QIP48E LC6650 3025B kbr-2.0ms

    M37475M4-XXXSP

    Abstract: M37476M4-XXXFP MELPS-740 MELPS 740
    Text: baMTflSfl 001715b 750 • M I T H M IT S U B S S H f M IC R O C O M P U T E R S M37475IVS2-XXXSP,&i37475IVI4-XXXSP M 3 7 4 7 5 IV 1 8 -X X X S P ,M 3 7 4 7 6 IV 1 2 -X X X S P /F P I V I3 7 4 7 6 M 4 - X X X S P / F P , M 3 7 4 7 6 iy i8 - X X X S P / F P


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    PDF 001715b M37475IVS2-XXXSP, i37475IVI4-XXXSP M37475M2-XXXSP 32-pin M37476M2XXXSP/FP 42-pin. 56-pin iW37475IVJ2- IVG37475M M37475M4-XXXSP M37476M4-XXXFP MELPS-740 MELPS 740

    transistor po3

    Abstract: stereo amplifier
    Text: DUAL LOW VOLTAGE POW ER AM PLIFIER NJM2076 s j T he N JM 2076 is a dual pow er amplifier, which operates with l.OV m inim um supply voltage. T h e N JM 2076 is suit­ able to small radio and head-phone o f stereo and single BTL application. • Package Outline


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    PDF NJM2076 NJH207GD NJM207BM transistor po3 stereo amplifier

    t4 358b

    Abstract: transistor bl p81 55bB LC66512B LC66562A LC66566A LC66E516 LC66P516 pc710 "Ceramic Filter"
    Text: Ordering number:EN3934B C M O S LSI LC66562A, LC66566A 4-bit Microcontrollers with Built-in ROM / //V, % r/ // y O V ER V IE W The LC66562A and LC66566A are 4-bit microcon­ trollers with built-in 12 and 16 Kbyte ROMs, respec­ tively. They incorporate RA M , input/output ports, a


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    PDF EN3934B 3934B LC66562A, LC66566A LC66562A LC66566A LC66000 LC66512B, t4 358b transistor bl p81 55bB LC66512B LC66E516 LC66P516 pc710 "Ceramic Filter"