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    TRANSISTOR PNP VCEO 400V Search Results

    TRANSISTOR PNP VCEO 400V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP VCEO 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS * Telephone switching


    Original     		PDF MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching


    Original     		PDF MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch


    Original     		PDF MMBTA94 -400V 350mW OT-23 QW-R206-008

    TO-92 VCEO400V

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		PDF MPSA94 -400V 625mW MPSA94L-AB3-R MPSA94G-AB3-R MPSA94L-T92-B MPSA94G-T92-B MPSA94L-T92-K MPSA94G-T92-K MPSA94L-T92-R TO-92 VCEO400V

    transistor SOT23 4d

    Abstract: pnp transistor 300v sot23 pnp low saturation transistor sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 *Telephone switching


    Original     		PDF MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94-AE3-6-R MMBTA94L-AE3-6-R OT-23 MMBTA94L-AE3-6-R transistor SOT23 4d pnp transistor 300v sot23 pnp low saturation transistor sot23

    sot23 4d

    Abstract: transistor marking 4D MMBTA94
    Text: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch


    Original     		PDF MMBTA94 -400V 350mW OT-23 QW-R206-008 sot23 4d transistor marking 4D MMBTA94

    KSA1625

    Abstract: TO-92 VCEO400V
    Text: UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF KSA1625 -400V 625mW QW-R201-067 KSA1625 TO-92 VCEO400V

    PZTA94G-AA3-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		PDF PZTA94 -400V 625mW PZTA94L-AA3-R PZTA94G-AA3-R OT-223 QW-R207-026

    MPSA94L

    Abstract: UTC MPSA94L MPSA94
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage Lead-free: MPSA94L Halogen-free: MPSA94G


    Original     		PDF MPSA94 -400V 625mW MPSA94L MPSA94G MPSA94-AB3-R MPSA94-T92-B MPSA94-T92-K MPSA94L-AB3-R MPSA94L-T92-B MPSA94L UTC MPSA94L MPSA94

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF MPSA94 -400V 625mW

    MPSA94

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF MPSA94 -400V 625mW QW-R201-021 MPSA94

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF MPSA94 -400V 625mW QW-R201-021

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  FEATURES 3 * Collector-Emitter Voltage: VCEO = -400V * Collector Dissipation: PC MAX = 350mW * Low Collector-Emitter Saturation Voltage  APPLICATIONS 2 SOT-23 * Telephone Switching


    Original     		PDF MMBTA94 -400V 350mW OT-23 O-236) MMBTA94G-AE3-R QW-R206-008

    transistor SOT23 4d

    Abstract: MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 2 *Telephone switching *High voltage switch


    Original     		PDF MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94-AE3-R MMBTA94L-AE3-R transistor SOT23 4d MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R

    ITR04446

    Abstract: ITR04587
    Text: SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications


    Original     		PDF OP8501 ENN8007 VCEO400V) 2000mm2 ITR04446 ITR04587

    MMBTA94

    Abstract: MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R MMBTA94G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES 3 * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS 2 1 SOT-23 * Telephone switching


    Original     		PDF MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R MMBTA94G-AE3-R

    KSP94

    Abstract: PNP 400V KSP44
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage


    Original     		PDF KSP94 -400V KSP44 -300V, -400V, -10mA -50mA -100mA -10mA, -50mA, KSP94 PNP 400V KSP44

    2SA1784

    Abstract: 2SA1781
    Text: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


    Original     		PDF EN3520 2SA1784/2SC4644 VCEO400V) 2SA17814/2SC4644] 2SA1784 2SA1784 2SA1781

    2SC4615

    Abstract: 2044B 2SA1772 X-6468 x6468
    Text: Ordering number:EN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).


    Original     		PDF EN3398A 2SA1772 2SC4615 2SA1772/2SC4615 VCEO400V) 2045B 2SA1772/2SC4615] 2044B 2SC4615 2044B 2SA1772 X-6468 x6468

    TO-92 VCEO400V

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage SOT-89 1 TO-92 *Pb-free plating product number: MPSA94L


    Original     		PDF MPSA94 -400V 625mW OT-89 MPSA94L MPSA94-AB3-R MPSA94-T92-B MPSA94-T92-K TO-92 VCEO400V

    Untitled

    Abstract: No abstract text available
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSP94 MPSA44

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		PDF 3512B 2SA1786/2SC4646 2SA1786 2SC4646 2SA1786 12894TH AX-8287/4231MH 5180TA X-6912

    transistor on 4409

    Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
    Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).


    OCR Scan     		PDF EN4409 2SA1830/2SC4734 2SA1830 2SC4734 2SA1830/2SC4734 transistor on 4409 on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3511A _ 2SA1785/2SC4645 2SA1785:PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s •Large current capacity Ic = 1A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		PDF EN3511A 2SA1785/2SC4645 2SA1785 2SC4645 2SA1785 12894TH AX-8287/517OTA 2SA1785/2 SC4645