Untitled
Abstract: No abstract text available
Text: FS8844-DS-17_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.7 Datasheet FS8844 250 mA Low Quiescent Current LDO Linear Regulator FS8844 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8844-DS-17
FS8844
OT-23
100mA
280mV
350mV
250mA
700mV
850mV
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SM912LV
Abstract: SM912FQD SM2A912 MBCC-306 SM912D SM912F SM91R SMA91EFQD mini spst switch SM2A912D
Text: VALU-BEAM 912 Series AC- and DC-powered sensors with solid-state outputs Features • Choose models for 10 to 30V dc or 24 to 250V ac operation. • DC models have bipolar solid-state outputs: one NPN sinking and one PNP (sourcing). • AC models have an SPST solid-state output rated for up to 3/4 amp with simple
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Untitled
Abstract: No abstract text available
Text: CPH5506 PNP/NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers. Features • Composite type with 2 transistors of PNP transistor and NPN transistor, facilitating high-density mounting.
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CPH5506
CPH5506
CPH3115
CPH3215,
CPH5506-applied
20IB1=
20IB2
750mA
991215TM2fXHD
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Untitled
Abstract: No abstract text available
Text: FS8853-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8853 Fo 300 mA LDO Linear Regulator FS8853 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,
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FS8853-DS-23
FS8853
FS8853
OT-23
OT-89
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Untitled
Abstract: No abstract text available
Text: FS8855-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8855 Fo 500 mA LDO Linear Regulator FS8855 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,
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FS8855-DS-23
FS8855
FS8855
OT-89
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Untitled
Abstract: No abstract text available
Text: FS8860-DS-19_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.9 FS8860 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8860-DS-19
FS8860
FS8860
OT-223
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2SC2785
Abstract: transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123
Text: 2SC2785 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 123 Features 3. BASE High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92S
2SC2785
O-92S
2SA1175
100mA,
2SC2785
transistor 2sc2785
2SC2785 transistor
TO92S
transistor 2sa1175
KF 25 transistor
transistor 123
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PNP 9012
Abstract: 9012 pnp transistor data sheet transistor 9012 transistor c 9012 9012 pnp Circuit diagram transistor 9012 8-lead plastic so 1N5819 9012 transistor pin diagram 3N80
Text: SS6652 Micro-Power Inverting DC/DC Controller n n FEATURES DESCRIPTION The SS6652 is a high-performance inverting l 2.4V to 7V input voltage operation. l Adjustable output voltage up to -40V. l Low quiescent current at 80µA. l Pulse frequency modulation maintains high
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SS6652
SS6652
70KHz
160KHz
PNP 9012
9012 pnp transistor
data sheet transistor 9012
transistor c 9012
9012 pnp
Circuit diagram transistor 9012
8-lead plastic so
1N5819
9012 transistor pin diagram
3N80
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Untitled
Abstract: No abstract text available
Text: FS8853-DS-26_EN OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8853 300 mA LDO Linear Regulator FS8853 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8853-DS-26
FS8853
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage VCEO:50V z Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) z Complementary to 2SA1175 PNP transistor
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O-92S
2SC2785
O-92S
2SA1175
100mA,
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Untitled
Abstract: No abstract text available
Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8855-DS-26
FS8855
500mAï
700mV
850mV
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2sC2785
Abstract: 2SA1175 TRANSISTOR 2SA1175 2SC2785 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage z Excellent hFE Linearity z Complementary to 2SA1175 PNP transistor 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92S
2SC2785
O-92S
2SA1175
100mA,
2sC2785
TRANSISTOR 2SA1175
2SC2785 transistor
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FS8860
Abstract: No abstract text available
Text: FS8860-DS-21_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.1 Datasheet FS8860 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8860-DS-21
FS8860
OT-223
O-252
OT-223.
FS8860
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 ^CEO PA CK A G E PN P T O -66 * Tc = 25°C 4 l ef ^C E m in /m a x @ A /V ^FE@ VcE(sat) @ I c/ I b (V @ A /A ) P * M> W ATTS fj (M H z) ,6@ 1/.125 25 4 3 0 -1 0 0 @ .2 5 /l .6@ 1/.125 25 4 1 3 0 -1 0 0 @ .2 5 /l
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2PB710AR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP general purpose transistor 2PB710A FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 50 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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2PB710A
SC-59
2PD602A.
2PB710AQ
2PB710AS
MAM322
2PB710AR
SC-59)
OT346
2PB710AR
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sot-23 Marking LG
Abstract: Transistor pnp ef 250 AEED SOT-23 MARKING 20A
Text: Central CMPT7090L Semiconductor Corp. SURFACE MOUNT LOWV c e SAT PNP POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT7090L is a Low VCE(SAT) PNP Transistor in a space AEED POWER saving Power SOT-23 surface mount package, IIP? natreneranicmct
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CMPT7090L
OT-23
50MHz
17-December
OT-23
sot-23 Marking LG
Transistor pnp ef 250
AEED
SOT-23 MARKING 20A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2 1 1 9 3 * NPN Silicon Power Transistors MJ2 1 1 9 4 * The M J21193 and M J21194 u tiliz e P e rfo ra te d E m itte r te c h n o lo g y and are specifically designed for high power audio output, disk head positioners and linear
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MJ21193/D
J21193
J21194
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T346
Abstract: 2P transistor
Text: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification.
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2PB709A
B601A
MAM322
SC-59)
OT346
T346
2P transistor
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bd250
Abstract: No abstract text available
Text: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD249 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current
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BD250,
BD250A,
BD250B,
BD250C
BD249
OT-93
BD250
BD250A
BD250B
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Untitled
Abstract: No abstract text available
Text: Central CMPT5086 CMPT5087 semiconductor Corp. DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and
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CMPT5086
CMPT5087
CMPT5086,
CMPT5086:
CMPT5087:
OT-23
CP588,
26-September
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transistor 36c
Abstract: tip36 transistor tip36 tip36b
Text: TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current
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TIP36,
TIP36A,
TIP36B,
TIP36C
TIP35
OT-93
TIP36
TIP36A
TIP36B
transistor 36c
transistor tip36
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BD246C
Abstract: transistor BD245
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD245 Series • 80 W at 25°C Case Temperature • 10 A Continuous Collector Current
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BD246,
BD246A,
BD246B,
BD246C
BD245
OT-93
BD246
BD246A
BD246B
transistor BD245
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Untitled
Abstract: No abstract text available
Text: TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP33 Series • 80 W at 25°C Case Temperature • 10 A Continuous Collector Current
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TIP34,
TIP34A,
TIP34B,
TIP34C
TIP33
OT-93
TIP34
TIP34A
TIP34B
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Untitled
Abstract: No abstract text available
Text: Panasonic ICs for Motor A N 8 4 1OSA Under development Actuator Motor Drive 1C • Overview Unit ! mm T h e A N 8 4 1 0 S A is a head actuator drive IC for disk memory device. The operating supply voltage is designed to support the 5V or 3.3V system. This IC incorporates the power PNP transistor in the
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36-pin
bT32fl52
AN8410SA
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