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    TRANSISTOR PNP ALG Search Results

    TRANSISTOR PNP ALG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP ALG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPCP8F01

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive


    Original     		PDF TPCP8F01 TPCP8F01

    Untitled

    Abstract: No abstract text available
    Text: HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type PCT Process HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) High-speed switching : PNP


    Original     		PDF HN4B101J

    marking 5K

    Abstract: HN4B101J
    Text: HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type PCT Process HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) High-speed switching : PNP


    Original     		PDF HN4B101J marking 5K HN4B101J

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


    Original     		PDF RN2107CT RN2109CT RN2107CT, RN2108CT, RN1107CT RN1109CT

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


    Original     		PDF RN2101CT RN2106CT RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN1101CT RN1106CT

    RN1110ACT

    Abstract: RN1111ACT RN2110ACT RN2111ACT
    Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2110ACT RN2111ACT RN1110ACT, RN1111ACT RN1110ACT RN1111ACT RN2111ACT

    Untitled

    Abstract: No abstract text available
    Text: RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110CT, RN2111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN2110CT RN2111CT RN2110CT, RN1110CT, RN1111CT

    Untitled

    Abstract: No abstract text available
    Text: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN1110CT, RN1111CT RN2110CT, RN2111CT

    RN2112ACT

    Abstract: RN2113ACT
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2112ACT RN2113ACT RN1112CT, RN1113CT RN2113ACT

    RN1101ACT

    Abstract: RN1106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT 1D43
    Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


    Original     		PDF RN2101ACT RN2106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN1101ACT RN1106ACT RN1106ACT RN2103ACT RN2106ACT 1D43

    Untitled

    Abstract: No abstract text available
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT, RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2112ACT RN2113ACT RN2112ACT, RN1112CT, RN1113CT

    Untitled

    Abstract: No abstract text available
    Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2110ACT RN2111ACT RN1110ACT, RN1111ACT

    Untitled

    Abstract: No abstract text available
    Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT, RN2102ACT, RN2103ACT RN2104ACT, RN2105ACT, RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


    Original     		PDF RN2101ACT RN2106ACT RN2101ACT, RN2102ACT, RN2103ACT RN2104ACT, RN2105ACT, RN1101ACT RN1106ACT

    Untitled

    Abstract: No abstract text available
    Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


    Original     		PDF RN2101ACT RN2106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN1101ACT RN1106ACT

    Untitled

    Abstract: No abstract text available
    Text: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN1110CT, RN1111CT RN1110CT RN2110CT, RN2111CT

    Untitled

    Abstract: No abstract text available
    Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT, RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2110ACT RN2111ACT RN2110ACT, RN1110ACT, RN1111ACT

    Untitled

    Abstract: No abstract text available
    Text: RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112CT, RN2113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN2112CT RN2113CT RN2112CT, RN1112CT, RN1113CT

    RN1901AFS

    Abstract: RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS
    Text: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


    Original     		PDF RN2901AFS RN2906AFS RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2902AFS RN1901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2107CT RN2109CT RN2107CT RN2108CT RN1107CT RN1109CT RN2108CT

    RN1901AFS

    Abstract: RN1906AFS RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS marking D5 TOSHIBA
    Text: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


    Original     		PDF RN2901AFS RN2906AFS RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2904AFS RN1901AFS RN1906AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS marking D5 TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


    Original     		PDF RN2901AFS RN2906AFS RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN1901AFS RN1906AFS

    Untitled

    Abstract: No abstract text available
    Text: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm


    Original     		PDF RN1110CT, RN1111CT RN1110CT RN2110CT, RN2111CT

    2851 transistor npn

    Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
    Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to


    OCR Scan     		PDF 0S0433Ã CI003L -H053 2851 transistor npn A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907

    B 773 transistor

    Abstract: 2N4403
    Text: ß. ' •- ALLE6R0 MICROSYSTEMS INC T3 D • QS0433ß QQQ3b71 4 ■ AL6R T -9 1-0 1 PROCESS ODA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power


    OCR Scan     		PDF 50433A T-91-01 G50433Ã G003b72 T-91-01 -al77 B 773 transistor 2N4403