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    TRANSISTOR PNP 10A Search Results

    TRANSISTOR PNP 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide


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    STD888 STD888 STD888L-at QW-R209-028 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


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    ZXTC6720MC ZXTDE4M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION


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    ZXTC6717MC ZXTDA1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it


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    UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207-024 PDF

    2N2955

    Abstract: 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS „ DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    2N2955 2N2955 2N2955L-T30-Y QW-R205-004 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP PDF

    2n2955

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    2N2955 2N2955 2N2955L-T30-Y QW-R205-004 PDF

    2N2955

    Abstract: 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    2N2955 2N2955 2N2955L 2N2955-T30-K 2N2955L-T30-K QW-R205-004 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP PDF

    marking DA1

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A


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    ZXTC6717MC ZXTDA1M832 marking DA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


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    ZXTC6720MC ZXTDE4M832 PDF

    MLP322

    Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
    Text: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state


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    ZXT4M322 MLP322 MLP322 ZXT4M322 ZXTD4M322TA ZXTD4M322TC PDF

    PT10m

    Abstract: A1210 BTA1210J3
    Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


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    C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR  APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.  FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    2SA2016 2SA2016G-AB3-R 2SA2016L-TN3-R 2SA2016G-TN3-R OT-89 O-252 2SA2016G QW-R208-018 PDF

    PNP SOT89

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. „ FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    2SA2016 2SA2016L-AB3-R 2SA2016G-AB3-R 2SA2016L-TN3-R 2SA2016G-TN3-R 2SA2016L-TN3-T 2SA2016G-TN3-T OT-89 O-252 PNP SOT89 PDF

    2N2955

    Abstract: No abstract text available
    Text: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    2N2955 2N2955 PDF

    power transistor 2n2955

    Abstract: 2N2955 2n2955 Power Transistor PNP SWITCHING TRANSISTOR 60V 2n2955 pnp power transistor
    Text: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    2N2955 2N2955 QW-R205-004 power transistor 2n2955 2n2955 Power Transistor PNP SWITCHING TRANSISTOR 60V 2n2955 pnp power transistor PDF

    TIP110A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR „ DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. „ FEATURES * Low VCE SAT


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    TIP110A TIP110A TIP110AL-TA3-T TIP110AG-TA3-T O-220 QW-R203-004 PDF

    pnp 400v 10a

    Abstract: MPSA194 MPSA19 equivalent t92 MPSA194L-T92-B
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. „ FEATURES


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    MPSA194 MPSA194 MPSA194L MPSA194G MPSA194-T92-B MPSA194-T92-K MPSA194L-T92-B MPSA194L-T92-K MPSA194G-T92-B MPSA194G-T92-K pnp 400v 10a MPSA19 equivalent t92 MPSA194L-T92-B PDF

    2SA2016L-AB3-R

    Abstract: 2SA20 2SA2016 2SA2016-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS 1 * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES SOT-89 *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    2SA2016 OT-89 2SA2016L 2SA2016-AB3-R 2SA2016L-AB3-R 2005t QW-R208-018 2SA2016L-AB3-R 2SA20 2SA2016 2SA2016-AB3-R PDF

    TIP110A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR „ DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. „ FEATURES * Low VCE SAT


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    TIP110A TIP110A TIP110AL TIP110AG TIP110A-TA3-T TIP110AL-TA3-T TIP110AG-TA3-T O-220 QW-R203-004 PDF

    "dual TRANSISTORs" pnp npn

    Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
    Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


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    ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034 PDF

    MLP832

    Abstract: ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1
    Text: ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


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    ZXTDA1M832 MLP832 ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1 PDF

    ZXTC6717MC

    Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor


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    ZXTC6717MC 100mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31926 ZXTC6717MC marking DA1 DFN3020B-8 ZXTC6717MCTA PDF

    Untitled

    Abstract: No abstract text available
    Text: > In the majority o f low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


    OCR Scan
    120mA 350mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: Compensation for Linear Regulators In the majority o f low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


    OCR Scan
    120mA 350mA, PDF