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    TRANSISTOR PH18 Search Results

    TRANSISTOR PH18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PH18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j5

    Abstract: 45W AMP PH1819-45A Wireless power
    Text: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation


    Original     		PDF PH1819-45A PH11819-45A PH1819-4 100KHz 1805MHz 1842MHz 1880MHz transistor j5 45W AMP PH1819-45A Wireless power

    PH1819-45

    Abstract: DSAE001132
    Text: PH1819-45 Wireless Bipolar Power Transistor 45W, 1805-1880 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching


    Original     		PDF PH1819-45 PH1819-45 DSAE001132

    POE-15

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
    Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP


    Original     		PDF PH1819-15N POE-15 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom

    Untitled

    Abstract: No abstract text available
    Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching


    Original     		PDF PH1819-33

    33w NPN

    Abstract: Pacific Wireless PH1819-33
    Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching


    Original     		PDF PH1819-33 33w NPN Pacific Wireless PH1819-33

    PH1819-15N

    Abstract: No abstract text available
    Text: PH1819-15N Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 15 W PEP


    Original     		PDF PH1819-15N PH1819-15N

    PH1819-4N

    Abstract: 1850 transistor
    Text: PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 4 W PEP


    Original     		PDF PH1819-4N PH1819-4N 1850 transistor

    13MM

    Abstract: PH1819-4N v6 4n diode
    Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point


    Original     		PDF PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode

    transistor b 595

    Abstract: ATC100A PH1819-45
    Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System


    Original     		PDF PHl819-45 transistor b 595 ATC100A PH1819-45

    PH1875L

    Abstract: No abstract text available
    Text: PH1875L N-channel TrenchMOS logic level FET Rev. 01 — 29 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


    Original     		PDF PH1875L PH1875L

    Solutions

    Abstract: PH1819-10
    Text: PH1819-10 Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • Designed for cellular base station applications -30 dBc typ. 3rd IMD at 10 W PEP Common emitter configuration


    Original     		PDF PH1819-10 Solutions PH1819-10

    PH1819-10

    Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
    Text: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP


    Original     		PDF PH1819-10 Fld850 PH1819-10 Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819

    TRANSISTOR 185 846

    Abstract: 1N914B PH1819-2
    Text: =-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 2W PH1819-2 Features Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration


    Original     		PDF PH1819-2 TRANSISTOR 185 846 1N914B PH1819-2

    c337 transistor

    Abstract: C338 c338 transistor
    Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PH1825AL PH1825AL c337 transistor C338 c338 transistor

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    LTC 433

    Abstract: input 12v 9v output converter diagram LT3845 16ME470WF DN433 flyback converter 3845 16ME47 PH1875L ic lt3845 387K
    Text: A Positive-to-Negative Voltage Converter Can Be Used for Stable Outputs Even with a Widely Varying Input – Design Note 433 Victor Khasiev + – , LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.


    Original     		PDF DN433 dn433f LTC 433 input 12v 9v output converter diagram LT3845 16ME470WF flyback converter 3845 16ME47 PH1875L ic lt3845 387K

    181945

    Abstract: No abstract text available
    Text: A fik k Coming Attractions M aann A M P c<o m p a n y Wireless Bipolar Power Transistor, 45W 1805-1880 MHz PH1819-45 Features • • • • • NPN Silicon Microwave Power Transistor Com m on Emitter Class AB O peration Internal Input and O utput Im pedance Matching


    OCR Scan     		PDF PH1819-45 181945

    J5417AKK

    Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417
    Text: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo­ lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805


    OCR Scan     		PDF PH1819-45A PH11819-45A PH1819-45A J5417AKK TT50M50A ATC100A MALLORY 150 CAPACITORS Rogers 6010.5 transistor 41 j5417

    1N4Z45

    Abstract: T33 transistor
    Text: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g


    OCR Scan     		PDF PH1819-33 1N4Z45 T33 transistor

    b 595 transistor

    Abstract: transistor b 595
    Text: m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.78 -1.90 GHz Features • • • • • PH1819-10 SL.Ü :i4 dd'- D esigned for C ellular Base Station A pplications -30 dBc Typ 3 rd IMD at 10 W atts PEP C o m m o n K m itter C onfig u ratio n


    OCR Scan     		PDF PH1819-10 b 595 transistor transistor b 595

    Untitled

    Abstract: No abstract text available
    Text: M fc c m m an A M P com pany Wireless Bipolar Power Transistor, 4W 1.78- 1.90 GHz PH1819-4N Features • • • • • • • • /i?b U8 4?> NPN Silicon M icrowave Power T ransistor D esign ed for Linear Am plifier A pplications Class AB: -34 dB c Typ 3rd IMD at 4 Watts PEP


    OCR Scan     		PDF PH1819-4N

    IU 1047

    Abstract: transistor 1005 oj
    Text: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point


    OCR Scan     		PDF PH1819-2 IU 1047 transistor 1005 oj

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP


    OCR Scan     		PDF PH1819-15N

    PH1819-30

    Abstract: PH1819
    Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching


    OCR Scan     		PDF PH1819-30 PH1819-30 PH1819