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    TRANSISTOR PB Search Results

    TRANSISTOR PB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    UN1518

    Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L „ ORDERING INFORMATION Order Number


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    UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor PDF

    transistor equivalent table

    Abstract: PBLS4002D
    Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 01 — 1 December 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package


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    PBLS4002D OT457 SC-74) transistor equivalent table PBLS4002D PDF

    PBLS4004D

    Abstract: No abstract text available
    Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 01 — 9 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package


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    PBLS4004D OT457 SC-74) PBLS4004D PDF

    PBLS4001D

    Abstract: 13905
    Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 01 — 30 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package


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    PBLS4001D OT457 SC-74) PBLS4001D 13905 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220


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    TIP120 TIP125 O-220 TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 PDF

    OF TRANSISTOR tip122

    Abstract: TRANSISTOR tip122 TIP122 transistor TIP122 hFE is transistor to220 equivalent of TIP122 TIP122L TIP122-T60-K DATA SHEET OF TRANSISTOR tip122 tip122 to-126
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP122 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. *Pb-free plating product number: TIP122L


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    TIP122 TIP122 TIP122L TIP122-T60-K TIP122L-T60-K TIP122-TA3-T TIP122L-TA3-T O-126 O-220 QW-R204-016 OF TRANSISTOR tip122 TRANSISTOR tip122 TIP122 transistor hFE is transistor to220 equivalent of TIP122 TIP122L TIP122-T60-K DATA SHEET OF TRANSISTOR tip122 tip122 to-126 PDF

    Marking M60

    Abstract: transistor 11
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


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    NSM6056MT1G SC-74 NSM6056M/D Marking M60 transistor 11 PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


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    NSM6056MT1G NSM6056M/D PDF

    SGA9189

    Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
    Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to


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    SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor PDF

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


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    SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89 PDF

    2SB1132

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L


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    2SB1132 OT-89 2SB1132 -500mA/-50mA) O-252 2SB1132L 2SB1132-x-AB3-R 2SB1132L-x-AB3-R 2SB1132-x-TN3-R 2SB1132L-x-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


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    LDTA124EET1 SC-89 PDF

    SGA-9089Z

    Abstract: 105051
    Text: SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


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    SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" 105051 PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523UB 2SAR523M 2SAR523EB R1010A PDF

    2SAR523EB

    Abstract: 2SCR523
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A 2SCR523 PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A PDF

    2A marking

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS DESCRIPTION


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    M3D425 PBSS2515F SC-89 OT490) PBSS3515F. MAM410 PBSS2515F 613514/01/pp8 2A marking PDF

    301 marking code PNP transistor

    Abstract: PBSS4350D PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


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    M3D302 PBSS5350D 603506/01/pp8 301 marking code PNP transistor PBSS4350D PBSS5350D PDF

    PBSS4350D

    Abstract: PBSS5350D MCD920
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


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    M3D302 PBSS4350D 603506/01/pp8 PBSS4350D PBSS5350D MCD920 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F PNP transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification PNP transistor PBSS3515F PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS DESCRIPTION


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    M3D425 PBSS3515F SC-89 OT490) PBSS2515F. MAM411 PBSS3515F 613514/01/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


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    NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D PDF

    419B-02

    Abstract: NSM11156DW6T1G marking .544 sot363
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


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    NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363 PDF

    transistor 2sc4793

    Abstract: 2sc4793 power amplifier 2sc4793 TRANSISTOR 2SC4793L-TF3-T 2SC4793-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 TO-220F *Pb-free plating product number:2SC4793L ORDERING INFORMATION


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    2SC4793 O-220F 2SC4793L 2SC4793-TF3-T 2SC4793L-TF3-T 2C4793L-TF3-T QW-R219-009 transistor 2sc4793 2sc4793 power amplifier 2sc4793 TRANSISTOR 2SC4793L-TF3-T 2SC4793-TF3-T PDF