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    TRANSISTOR P6N MOTOROLA Search Results

    TRANSISTOR P6N MOTOROLA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

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    transistor P6n motorola

    Abstract: tdk cpt transistor P6n tdk 107MS
    Text: fi 19- 1268; Rev 0: 8/97 Low-Voltage, Precision Step-Down C ontroller tor Portable CPU Power Up to 95% efficiency is achieved through synchronous rectification and Maxim's proprietary Idle Mode con­ trol scheme. E fficiency is greater than 80% over a 1000:1 load-current range, extending battery life in system -suspend or standby modes. Excellent dynam ic


    OCR Scan     		PDF 102nn transistor P6n motorola tdk cpt transistor P6n tdk 107MS