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    TRANSISTOR P50N06 Search Results

    TRANSISTOR P50N06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P50N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P50N06

    Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18
    Text: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB


    OCR Scan     		SMP60N06-18 18-mQ P50N06-18 O-22QAB P-36737--Rev. P50N06 SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18 PDF

    p50n06

    Abstract: TRANSISTOR p50n06 transistor bc337 AN964 Mosfet P50N06 1N4148 BC337 LPR30 LT1585 bc337 transistor
    Text: AN964 APPLICATION NOTE VERY FAST LOAD TRANSIENT RESPONSE WITH THE NEW LPR30 APPLICATION INTRODUCTION Some applications requires high performances power supply characteristics in terms of fast recover to properly work. In particular it happen in the sequential system, where if an unexpected and high current


    Original     		AN964 LPR30 LT1585 p50n06 TRANSISTOR p50n06 transistor bc337 AN964 Mosfet P50N06 1N4148 BC337 bc337 transistor PDF

    P50N06

    Abstract: 1N4148 AN964 BC337 LPR30 LT1585 TRANSISTOR p50n06
    Text: AN964 APPLICATION NOTE VERY FAST LOAD TRANSIENT RESPONSE WITH THE NEW LPR30 APPLICATION INTRODUCTION Some applications requires high performances power supply characteristics in terms of fast recover to properly work. In particular it happen in the sequential system, where if an unexpected and high current


    Original     		AN964 LPR30 LT1585 P50N06 1N4148 AN964 BC337 TRANSISTOR p50n06 PDF