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    TRANSISTOR P2F Search Results

    TRANSISTOR P2F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P2F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    ON MARKING P2F

    Abstract: PXT2222A PXT2907A PXT2907APNP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2907A PNP switching transistor Product specification Supersedes data of 1999 Apr 14 2002 Mar 20 Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA


    Original     		PDF M3D109 PXT2907A PXT2222A. MAM297 SCA74 613514/04/pp8 ON MARKING P2F PXT2222A PXT2907A PXT2907APNP

    Untitled

    Abstract: No abstract text available
    Text: PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com


    Original     		PDF PZT2907A OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D

    BP317

    Abstract: PXT2222A PXT2907A p2f 43
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA


    Original     		PDF M3D109 PXT2907A PXT2222A. MAM297 SCA63 115002/00/03/pp8 BP317 PXT2222A PXT2907A p2f 43

    Untitled

    Abstract: No abstract text available
    Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 OT-223 PZT2907AT1/D

    sot-223 body marking D K Q F

    Abstract: transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
    Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D sot-223 body marking D K Q F transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G

    transistor P2F

    Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 transistor P2F ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G

    transistor P2F

    Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF PZT2907AT1 OT-223 PZT2222AT1 transistor P2F ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f

    p2f sot-223

    Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3

    p2f sot-223

    Abstract: PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916

    MARKING P2F

    Abstract: No abstract text available
    Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 MARKING P2F

    MARKING P2F

    Abstract: 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 p2f sot-223
    Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1 inch/1000 r14525 PZT2907AT1/D MARKING P2F 1N916 PZT2222AT1 PZT2907AT3 p2f sot-223

    MARKING P2F

    Abstract: PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F
    Text: MOTOROLA Order this document by PZT2907AT1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF PZT2907AT1/D PZT2907AT1 OT-223 PZT2222AT1 PZT2907AT1/D* MARKING P2F PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F

    transistor marking p2f

    Abstract: MARKING p2F p2f marking
    Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 r14525 PZT2907AT1/D transistor marking p2f MARKING p2F p2f marking

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567

    P2T2907

    Abstract: P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT1 PZT2907AT3 11111111M 30i sot223 P2907A
    Text: MOTOROU Order this document by P~2907ATllD SEMICONDUCTOR TECHNICAL DATA PNP Silicon EpitmiaI Wansistor P2T2907ATI This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF 2907ATllD P2T2907ATI OT-223 PZT2222AT1 PZT2907AT1 MK145BP, 2PHX25151F-5 2907ATIID P2T2907 P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT3 11111111M 30i sot223 P2907A

    transistor SMD P2F

    Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
    Text: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage


    Original     		PDF PXT2907A transistor SMD P2F smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F

    H7CR-BW-500

    Abstract: H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER
    Text: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).


    Original     		PDF IEC1010-1/EN61010-1 H7CR-8/11 M012-E1-1B H7CR-BW-500 H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES


    OCR Scan     		PDF PXT2907A PXT2222A. PXT2907A 115002/00/03/pp8

    ZT2907A

    Abstract: PZT2907AT3 ON MARKING P2F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    OCR Scan     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 ZT2907A ON MARKING P2F

    MARKING P2F

    Abstract: transistor P2F PZT2907AT3 motorola P2F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 M otorola P referred Devios This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    OCR Scan     		PDF OT-223 PZT2222AT1 PZT2907AT1 MARKING P2F transistor P2F PZT2907AT3 motorola P2F

    sot-223 body marking D K Q F

    Abstract: sot223 p2f
    Text: »•üysüM, Order this data sheet by PZT2907AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed


    OCR Scan     		PDF PZT2907AT1/D OT-223 PZT2222AT1 PZT2907AT1 2PHX25151F-3 sot-223 body marking D K Q F sot223 p2f

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Switching and linear amplification. DESCRIPTION


    OCR Scan     		PDF PXT2907A PXT2222A.

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is


    OCR Scan     		PDF PZT2907AT1 OT-223 PZT2222AT1 b3ti75SS J357b