TRANSISTOR P0903BDG Search Results

TRANSISTOR P0903BDG Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR P0903BDG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P0903BDG Abstract: p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P0903BDG O-252 Temperature2004 SEP-24-2004 P0903BDG p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg	PDF
P0903BDG Abstract: p0903bd p0903 ELM32424LA-S Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)	Original	ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG p0903bd p0903	PDF
P0903BDG Abstract: ELM32424LA-S Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)	Original	ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG	PDF
P0903BDG Abstract: ELM32424LA-S p0903bd p0903b Text: シングル N チャンネル MOSFET ELM32424LA-S •概要 ■特長 ELM32424LA-S は低入力容量低電圧駆動、低・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=50A ・ Rds on < 9.5mΩ (Vgs=10V) ・ Rds(on) < 16mΩ (Vgs=4.5V)	Original	ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG ELM32424LA-S p0903bd p0903b	PDF
ELM32424LA Abstract: ELM32424LA-S Text: 单 N 沟道 MOSFET ELM32424LA-S •概要 ■特点 ELM32424LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=50A ·Rds on < 9.5mΩ (Vgs=10V) ·Rds(on) < 16mΩ (Vgs=4.5V) ■绝对最大额定值项目	Original	ELM32424LA-S P0903BDG O-252 SEP-24-2004 ELM32424LA ELM32424LA-S	PDF