AN5296 Application of the CA3018 Integrated
Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
Text: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000
|
Original
|
CA314
CA318
CA3146,
CA3146A,
CA3183,
CA3183A
CA3183A,
AN5296 Application of the CA3018 Integrated
an5296
ca314 DE
ca314 application notes
AN5296 Application note CA3018
"Application of the CA3018"
AN5296 Application of the CA3018 Integrated-Ci
CA3183E
CA318
CA3083
|
PDF
|
DFN3020B-8
Abstract: ZXTC4591AMC ZXTC4591AMCTA ZXTC6720MC
Text: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features and Benefits Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage 500mV max @ 1A • RSAT = 195mΩ for a low equivalent On-Resistance
|
Original
|
ZXTC4591AMC
500mV
-500mV
ZXTC6720MC
DS31929
DFN3020B-8
ZXTC4591AMC
ZXTC4591AMCTA
ZXTC6720MC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features and Benefits Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage 500mV max @ 1A • RSAT = 195mΩ for a low equivalent On-Resistance
|
Original
|
ZXTC4591AMC
500mV
-500mV
ZXTC6720MC
DS31929
|
PDF
|
TSC5303DCH
Abstract: TSC5303DCP transistor C14
Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
|
Original
|
TSC5303D
O-251
O-252
TSC5303DCH
TSC5303DCP
transistor C14
|
PDF
|
91A PNP
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage 500mV max @ 1A • RSAT = 195mΩ for a low equivalent On-Resistance
|
Original
|
ZXTC4591AMC
500mV
-500mV
DS31925
91A PNP
|
PDF
|
TSC5303D
Abstract: diode b10 250V transistor npn 2a
Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
|
Original
|
TSC5303D
O-251
O-252
TSC53erty
TSC5303D
diode b10
250V transistor npn 2a
|
PDF
|
3a npn to126 transistor
Abstract: 2sd1060l 2SD1060
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR 1 SOT-89 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A 1 TO-126 1 TO-92 1 TO-220 1 1 TO-252 TO-251 *Pb-free plating product number: 2SD1060L
|
Original
|
2SD1060
OT-89
O-126
O-220
O-252
O-251
2SD1060L
2SD1060-x-AB3-R
2SD1060L-x-AB3-R
2SD1060-x-T60-K
3a npn to126 transistor
2sd1060l
2SD1060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR 1 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-251 1 SOT-89 TO-126 ORDERING INFORMATION Ordering Number Lead Free
|
Original
|
2SB824
OT-89
O-251
O-126
2SB824L-x-AB3-R
2SB824G-x-AB3-R
2SB824L-x-T60-K
2SB824G-x-T60-K
2SB824L-x-TM3-T
2SB824G-x-TM3-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors
|
Original
|
FJB102
FJB102
FJB102TM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R
|
Original
|
2SD1060
2SD1060L-x-AB3-R
2SD1060G-x-AB3-R
2SD1060L-x-T60-K
2SD1060G-x-T60-K
2SD1060L-x-T92-B
2SD1060G-x-T92-B
2SD1060L-x-T92-K
2SD1060G-x-T92-K
2SD1060L-x-TA3-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP SILICON TRANSISTOR PNP PLANAR SILICON TRANSISTOR 1 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =-0.4V max/IC=-3A, IB=-0.3A 1 TO-251 1 TO-126 ORDERING INFORMATION Ordering Number Lead Free
|
Original
|
2SB824
O-251
O-126
2SB824G-x-AB3-R
2SB824L-x-T60-K
2SB824G-x-T60-K
2SB824L-x-TM3-T
2SB824G-x-TM3-T
OT-89
|
PDF
|
60V transistor npn 2a
Abstract: d 772 transistor NPN 2A TO 126 60V transistor npn ic2a to-126 transistor Transistor TO-126 Transistor to 126
Text: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 60V BVCEO 30V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Complementary part with TSB772 Part No.
|
Original
|
TSD882
O-126
200mA
TSB772
TSD882CK
O-126
200pcs
60V transistor npn 2a
d 772 transistor
NPN 2A TO 126
60V transistor npn ic2a
to-126 transistor
Transistor TO-126
Transistor to 126
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A
|
Original
|
TSD2150A
OT-89
200mA
TSB1424A
TSD2150ACY
|
PDF
|
3A 100V npn LOW SATURATION VOLTAGE
Abstract: TSD2098 TSD2098A
Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics
|
Original
|
TSD2098A
OT-89
100mA
TSD2098ACY
3A 100V npn LOW SATURATION VOLTAGE
TSD2098
TSD2098A
|
PDF
|
|
|
80V 1A NPN Transistor TO-92
Abstract: transistor b11 TSD2150A NPN Transistor TO92 5V 200mA 0118 transistor 2A 80v complementary transistor 0118 n-p-n
Text: TSD2150A Low Vcesat NPN Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.)
|
Original
|
TSD2150A
OT-89
200mA
TSB1424A
TSD2150ACY
TSD2150ACT
OT-89
80V 1A NPN Transistor TO-92
transistor b11
TSD2150A
NPN Transistor TO92 5V 200mA
0118 transistor
2A 80v complementary transistor
0118 n-p-n
|
PDF
|
TIP102
Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage
|
Original
|
TIP100/TIP101/TIP102
TIP105/106/107
O-220
TIP100
TIP101
TIP102
TIP100/TIP101/TIP102
TIP102
TIP102 Darlington transistor
TIP101
TIP100
NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
|
PDF
|
2SB1184
Abstract: 2SB1243 2SD1760 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864
|
Original
|
2SD1760
2SD1864
2SD1760
SC-63
65Max.
2SB1184
2SB1243
2SD1864
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage
|
Original
|
TIP100/TIP101/TIP102
TIP105/106/107
O-220
TIP100
TIP101
TIP102
TIP100/TIP101/TIP102
|
PDF
|
D07 15
Abstract: to-126 transistor TSB772CK TSB772 TSD882
Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882
|
Original
|
TSB772
O-126
200mA
TSD882
TSB772CK
-200mA
250pcs
D07 15
to-126 transistor
TSB772
TSD882
|
PDF
|
transistor F13
Abstract: transistor F13 10
Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Ordering Information Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882
|
Original
|
TSB772
O-126
-200mA
200mA
TSD882
TSB772CK
O-126
250pcs
transistor F13
transistor F13 10
|
PDF
|
d 772 transistor
Abstract: TSB772 TSD772CK TSD882 772 pnp transistor 200ma pnp
Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -50V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882
|
Original
|
TSB772
O-126
200mA
TSD882
TSD772CK
-200mA
d 772 transistor
TSB772
TSD882
772 pnp
transistor 200ma pnp
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP
|
Original
|
TSD1760
O-252
200mA
TSB1184CP
TSD1760CP
|
PDF
|
2SA2071
Abstract: 2SC5824 T100
Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5
|
Original
|
2SC5824
200mV
200mA)
2SA2071.
2SA2071
2SC5824
T100
|
PDF
|
d 772 transistor
Abstract: transistor 772 "PNP Transistor" TSB772 TSD772CK TSD882 transistor 200ma pnp
Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882
|
Original
|
TSB772
O-126
200mA
TSD882
TSD772CK
-200mA
d 772 transistor
transistor 772
"PNP Transistor"
TSB772
TSD882
transistor 200ma pnp
|
PDF
|
