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    TRANSISTOR OF VALUE VCE 3V Search Results

    TRANSISTOR OF VALUE VCE 3V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR OF VALUE VCE 3V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 MMBTSC4226 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF
    Text: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA


    Original     		PDF MMBTSC4226 OT-23 MMBTSC4226 Transistor hFE CLASSIFICATION Marking CE R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF

    n7 transistor

    Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


    Original     		PDF 2SC1654 OT-23 BL/SSSTC096 n7 transistor marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5

    transistor code R24

    Abstract: R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24 MMBTSC4226
    Text: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: z Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA z High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA


    Original     		PDF MMBTSC4226 OT-23 MMBTSC4226 transistor code R24 R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


    Original     		PDF 2SC1654 OT-23 BL/SSSTC096

    germanium transistors NPN

    Abstract: 2sd879 transistor germanium MS 3A
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010 germanium transistors NPN transistor germanium MS 3A

    2sd879

    Abstract: germanium transistors NPN
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF 2SD879 2SD879 2SD879s QW-R201-043 germanium transistors NPN

    Zener diode 10b3

    Abstract: 9V 1A Transformer specification DIODE 10B3 D44C3A sr104 diode 10v ZENER DIODE Transformer 9v 1A 470 mf 16v LM3578 9V 2A Transformer specification
    Text: INTRODUCTION Isolated power supplies for I O cards are required to provide multiple outputs typically 9V at 0 mA–120 mA and 5V at 0 mA – 200 mA from a 3 3V input The transformer peak primary currents are generally very high there by eliminating the choice of many popular low-cost integrated circuits The


    Original     		PDF LM3578A D44C3A LM3578A Zener diode 10b3 9V 1A Transformer specification DIODE 10B3 sr104 diode 10v ZENER DIODE Transformer 9v 1A 470 mf 16v LM3578 9V 2A Transformer specification

    1nS pulse width circuit

    Abstract: MPS2369A High speed switching Transistor
    Text: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1


    Original     		PDF MPS2369A 300ns 100mA, 140KHz 1nS pulse width circuit MPS2369A High speed switching Transistor

    transistor substitution chart

    Abstract: S M R2632 saw resonator r2632 95hs01 saw Colpitts circuit design I-ETS-300-220 siemens R2632 R2632 433.92 Mhz two-port saw resonator RP1303
    Text: AN-1021 Fairchild Application Note 1021 3V RF-Transmitter Utilizing Fairchild’s HiSeC Encoder INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control, data exchange, keyless entry systems, and others. The


    Original     		PDF AN-1021 C56858 transistor substitution chart S M R2632 saw resonator r2632 95hs01 saw Colpitts circuit design I-ETS-300-220 siemens R2632 R2632 433.92 Mhz two-port saw resonator RP1303

    2SB1227

    Abstract: 2SD1829 motor and printer
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1500 Min @ (VCE= -3V, IC= -2.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1829 APPLICATIONS ·Designed for use in control of motor drivers, printer


    Original     		PDF 2SD1829 2SB1227 2SD1829 motor and printer

    transistor 2SD1830

    Abstract: 2Sd1830 2sd1830 equivalent 2SB1228
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1500 Min @ (VCE= -3V, IC= -4A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1830 APPLICATIONS ·Designed for use in control of motor drivers, printer


    Original     		PDF 2SD1830 transistor 2SD1830 2Sd1830 2sd1830 equivalent 2SB1228

    2SB1226

    Abstract: 2SD1828
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1500 Min @ (VCE= -3V, IC= -1.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1828 APPLICATIONS ·Designed for use in control of motor drivers, printer


    Original     		PDF 2SD1828 2SB1226 2SD1828

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    2SB1568

    Abstract: No abstract text available
    Text: , Una. L/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1568 Silicon PNP Darlington Power Transistor 1 DESCRIPTION • Collector-Emitter Breakdown Vbltage: V(BR)CEo= -80V(Min) • High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, lc= -2A)


    Original     		PDF 2SB1568 2SD2399 O-220F 10MHz 2SB1568

    BDW73C

    Abstract: bdw73d BDW73 BDW73A BDW73B BDW74 BDW74A BDW74B BDW74C BDW74D
    Text: BDW73, BDW73A, BDW73B, BDW73C, BDW73D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW74, BDW74A, BDW74B, BDW74C and BDW74D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE


    Original     		PDF BDW73, BDW73A, BDW73B, BDW73C, BDW73D BDW74, BDW74A, BDW74B, BDW74C BDW74D BDW73C bdw73d BDW73 BDW73A BDW73B BDW74 BDW74A BDW74B BDW74D

    BDW63D

    Abstract: BDW63 BDW63A BDW63B BDW63C BDW64 BDW64A BDW64B BDW64C BDW64D
    Text: BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D ● 60 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A TO-220 PACKAGE


    Original     		PDF BDW63, BDW63A, BDW63B, BDW63C, BDW63D BDW64, BDW64A, BDW64B, BDW64C BDW64D BDW63D BDW63 BDW63A BDW63B BDW63C BDW64 BDW64A BDW64B BDW64D

    BDW83

    Abstract: BDW83C BDW83D BDW83A BDW83B BDW84 BDW84A BDW84B BDW84C BDW84D
    Text: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A


    Original     		PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW83C BDW83D BDW83A BDW83B BDW84 BDW84A BDW84B BDW84D

    bdw73d

    Abstract: BDW73 BDW73A BDW73B BDW73C BDW74 BDW74A BDW74B BDW74C BDW74D
    Text: BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE


    Original     		PDF BDW74, BDW74A, BDW74B, BDW74C, BDW74D BDW73, BDW73A, BDW73B, BDW73C BDW73D bdw73d BDW73 BDW73A BDW73B BDW74 BDW74A BDW74B BDW74C BDW74D

    Untitled

    Abstract: No abstract text available
    Text: BDW73, BDW73A, BDW73B, BDW73C, BDW73D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW74, BDW74A, BDW74B, BDW74C and BDW74D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but


    Original     		PDF BDW73, BDW73A, BDW73B, BDW73C, BDW73D BDW74, BDW74A, BDW74B, BDW74C BDW74D

    Untitled

    Abstract: No abstract text available
    Text: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A


    Original     		PDF BDW53, BDW53A, BDW53B, BDW53C, BDW53D BDW54, BDW54A, BDW54B, BDW54C BDW54D

    BDW63

    Abstract: BDW63A BDW63B BDW63C BDW63D BDW64 BDW64A BDW64B BDW64C BDW64D
    Text: BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D ● 60 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A TO-220 PACKAGE


    Original     		PDF BDW64, BDW64A, BDW64B, BDW64C, BDW64D BDW63, BDW63A, BDW63B, BDW63C BDW63D BDW63 BDW63A BDW63B BDW63D BDW64 BDW64A BDW64B BDW64C BDW64D

    BDW54

    Abstract: BDW53 BDW53A BDW53B BDW53C BDW53D BDW54A BDW54B BDW54C BDW54D
    Text: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A


    Original     		PDF BDW54, BDW54A, BDW54B, BDW54C, BDW54D BDW53, BDW53A, BDW53B, BDW53C BDW53D BDW54 BDW53 BDW53A BDW53B BDW53D BDW54A BDW54B BDW54C BDW54D