1N4153
Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
24-Hour
1N4153
NEL2001
2.2 uf 50v electrolytic
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2.2 uf 50v electrolytic
Abstract: 1N4153 NEL2001 NEL200101-24
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
24-Hour
2.2 uf 50v electrolytic
1N4153
NEL2001
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products M G S F2P02H D TMOS Field Effect Transistor P-Channel Enhancement-Mode MOSFET T his device re p re se nts a se rie s of pow er M O SFETs w hich
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MGSF2P02HD/D
F2P02H
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MRF5160
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M R F3866 The RF Line N PN S ilicon High Frequency T ransisto r SURFACE MOUNT RF TRANSISTOR NPN SILICON . . . designed fo r a m p lifie r and o s c illa to r a p p lica tio n s in in d u stria l e q u ip m e n t constructed
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F3866
MRF5160
MRF3866
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Untitled
Abstract: No abstract text available
Text: ISOCOn COMPONE NTS LTD 488 651 0 ISOCOM INC 7SC D • 4flflbS10 O O O O i m 75C 00114 bES ■ ISO D 7 - ^ A ^ 3 ICPL 2631 Dual HighCMR,High Speed Opto Isolator FEATURES • • • • • L S T T L /T T L Compatible High Speed High Density Packaging Guaranteed Performance Over
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4flflbS10
ICPL2631
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transistor 2sd525
Abstract: 2SD525
Text: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.
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2SD525
2SB595.
transistor 2sd525
2SD525
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2SD798
Abstract: No abstract text available
Text: TO SH IBA 2SD798 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD798 IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX High DC Current Gain hp’g ' 1 sn n rivrin ì V. = 9 .v Tr. = 9. a /ì 1.5MAX.
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2SD798
O-220AB
2-10A1A
2SD798
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transistor 2sk2700
Abstract: No abstract text available
Text: TO SHIBA 2SK2700 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm
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2SK2700
20kil)
transistor 2sk2700
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transistor Sh 550
Abstract: No abstract text available
Text: TO SHIBA 2SK2232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2232 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3
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2SK2232
36mfl
transistor Sh 550
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2SD553
Abstract: Toshiba 2sd553
Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.
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2SD553
2SB553.
2-10A1A
O-220AB
2SD553
Toshiba 2sd553
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2SB553
Abstract: No abstract text available
Text: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A
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2SB553
2SD553.
2SB553
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transistor Ic 1A
Abstract: No abstract text available
Text: 2SA1012 TO SH IBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm « ii MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2SA1012
2SC2562.
O-220AB
SC-46
2-10A1A
--50V,
transistor Ic 1A
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C23r
Abstract: No abstract text available
Text: @ M IT E L s e m ic o n d u c t o r SP5769 3GHz l2C Bus Synthesiser Target Specification This supersedes Septem ber 1998 1.3 Edition The SP5769 is a single chip frequency synthesiser designed for tuning systems up to 3GHz.
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SP5769
DS4878
SP5769
C23r
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DIODE ED 34
Abstract: No abstract text available
Text: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3
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2SK2350
DIODE ED 34
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SB1015 TOSHIBA TRANSISTOR 2 S SILICON PNP TRIPLE DIFFUSED TYPE B 1 0 1 5 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) at IC = - 3 A , IB = -0 .3 A • Collector Power Dissipation : P £ = 25W (Tc = 25°C)
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2SB1015
2SD1406
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Untitled
Abstract: No abstract text available
Text: r& T O K O TK75020 ZVS RESONANT CONTROLLER FEATURES APPLICATIONS • Optimized for Off-Line and Battery Powered ■ Cold Cathode Fluorescent Lamps ■ Resonant Power Supplies Operation ■ Internal Zero-Voltage Detector ■ Power Supplies for Notebook Computers
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TK75020
TheTK75020
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MJ12003
Abstract: byi30
Text: motorola x s t r s /r sc 15E D | f 1,31,7554 QDaSOÛ? fi f 7*3*10 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 AM PERE H O R IZ O N T A L D E F L E C T IO N T R A N SIS T O R NPN SILICON POWER T R AN SISTO R . . . sp e c ific a lly designed fo r use in C R T d e fle c tio n c ircu its.
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2sb595
Abstract: 2sb595o 2SB595-O transistor 2sd525
Text: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.
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2SB595
--100V
2SD525.
2sb595
2sb595o
2SB595-O
transistor 2sd525
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GT15J102
Abstract: 2-10R1C J102 RL-20 V100 Vgg-15 5-J04
Text: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATINS • • • • 10 ± 0.3 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V^g (sat) “ 4.0V (Max.)
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GT15J102
GT15J102
2-10R1C
J102
RL-20
V100
Vgg-15
5-J04
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35N15E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTW35N15E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 35 AMPERES 150 VOLTS RDS on = 0-05 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-01
35N15E
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Untitled
Abstract: No abstract text available
Text: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATINS • • • • 10 ± 0.3 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V^g (sat) “ 4.0V (Max.)
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GT15J102
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transistor nec cel
Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
transistor nec cel
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Untitled
Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
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2SD1415A
Abstract: No abstract text available
Text: TO SH IBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 High DC Current Gain : hFE = 2000 (Min.) (VCE = 3 V, IC = 3 A)
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2SD1415A
2SD1415A
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