Untitled
Abstract: No abstract text available
Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology
|
Original
|
MJE172
OT-32
OT-32
MJE172
|
PDF
|
mje182
Abstract: to-126 HIGH SPEED SWITCHING transistor
Text: MJE182 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology
|
Original
|
MJE182
OT-32
OT-32
MJE182
to-126 HIGH SPEED SWITCHING transistor
|
PDF
|
transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
|
Original
|
HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
|
PDF
|
MJE13009d
Abstract: 1A 300V TRANSISTOR MJE13009-D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.
|
Original
|
MJE13009D
MJE13009D
QW-R203-041
1A 300V TRANSISTOR
MJE13009-D
|
PDF
|
NPN Transistor 600V TO-220
Abstract: ULB124G ulb124
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
|
Original
|
ULB124
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
O-251
QW-R213-013
NPN Transistor 600V TO-220
ULB124G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
|
Original
|
ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-K
ULB124G-xx-T60-K
|
PDF
|
ULB124
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
|
Original
|
ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-T
ULB124G-xx-T60-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES DESCRIPTION • S-mini package NPN transistor in a plastic SOT323 S-mini package. • High speed switching. APPLICATIONS It is intended for high speed switching applications.
|
OCR Scan
|
PMST2369
OT323
OT323)
|
PDF
|
NTE2312
Abstract: 220v 2a transistor
Text: NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited
|
Original
|
NTE2312
NTE2312
220v 2a transistor
|
PDF
|
MJD18002D2
Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain
|
Original
|
MJD18002D2
MJD18002D2
r14525
MJD18002D2/D
MJD18002D2T4
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
SMD310
MJD18002D2-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR . . . . . . STM PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR TV . SWITCHING REGULATORS
|
OCR Scan
|
BUY69A
BUY69A
P003F
|
PDF
|
18002D2
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain
|
Original
|
MJD18002D2
MJD18002D2
18002D2
|
PDF
|
02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
|
Original
|
MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
MJD18002D2T4G
18002d2
MJD18002D2T4
MPF930
MTP8P10
MJD18002D2 Motorola
MTP12
|
PDF
|
NPN Transistor 1500V
Abstract: BU706 colour television schematics QDBA553 transistor smps high voltage offline smps
Text: 0056551 6 • 3~ t3 SGS-THOMSON LICTBOBOeS S G S-THOMSON BU706 3QE i HIGH VOLTAGE NPN TRANSISTOR ADVANCE DATA ■ HIGH VOLTAGE ■ HIGH SPEED SWITCHING DESCRIPTION The BU706 is a high voltage, high speed switching silicon multiepitaxial NPN transistor in TO-218 plas
|
OCR Scan
|
QDBA553.
BU706
BU706
O-218
300ns,
NPN Transistor 1500V
colour television schematics
QDBA553
transistor smps high voltage
offline smps
|
PDF
|
|
|
transistor case To 106
Abstract: BUT11A Transistor morocco 1300
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION
|
Original
|
BUT11A
BUT11A
O-220
O-220
transistor case To 106
Transistor morocco 1300
|
PDF
|
BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
|
OCR Scan
|
CB-19
BUX45
transistor et 460
|
PDF
|
2SC4550
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
|
Original
|
2SC4550
2SC4550
|
PDF
|
NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
|
Original
|
2SC4552
2SC4552
NEC 2sc4552
|
PDF
|
2SC4551
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
|
Original
|
2SC4551
2SC4551
|
PDF
|
NTE2319
Abstract: No abstract text available
Text: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
|
Original
|
NTE2319
NTE2319
800ns
|
PDF
|
BUV20
Abstract: No abstract text available
Text: BUV20 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ SWITCHING REGULATORS
|
Original
|
BUV20
BUV20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS
|
OCR Scan
|
BUL216
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO
|
Original
|
BTC1510F3
BTC1510F3
BTC1510F3L-TN3-R
BTC1510F3G-TN3-R
BTC1510F3L-TQ2-T
BTC1510F3G-TQ2-T
BTC1510F3L-TQ2-R
BTC1510F3G-TQ2-R
O-252
O-263
|
PDF
|
BUT100
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUT100 HIGH POWER NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION . MOTOR CONTROL . UNINTERRUPTABLE POWER SUPPLY
|
OCR Scan
|
BUT100
BUT100
P0030
|
PDF
|
