Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
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transistor marking c4
Abstract: UTCMMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 2 3 MARKING SOT-523 C4
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MMBT1815
150mA
MMBT1015
OT-523
QW-R221-009
transistor marking c4
UTCMMBT1815
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MMBT1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
MMBT1015
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TRANSISTOR b100
Abstract: No abstract text available
Text: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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UTCMMBT1815
150mA
MBT1015
OT-23
QW-R206-014
TRANSISTOR b100
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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mbt1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
mbt1015
MMBT1815
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100 pf, ATC Chip Capacitor
Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
Text: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6
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MRF6401PHT/D
MRF6401
SOE200
MRF6401
MRF6401PHT/D*
100 pf, ATC Chip Capacitor
motorola rf Power Transistor
SMD Transistor Y14
100 pf, ATC Chip Capacitor 100A
Motorola Potentiometer
8B TRANSISTOR SMD
470 resistor
motorola rf device data book
SMD Transistor 6f
SMD potentiometer
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transistor rf m 1104
Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641
Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7
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MRF6414PHT/D
MRF6414
1N4007
SD135
MRF6414
MRF6414PHT/D*
transistor rf m 1104
motorola rf Power Transistor
motorola rf 1104 Power Transistor
SD135
MOTOROLA TRANSISTOR T2
100 mf capacitor
Motorola 1N4007
transistor 228 npn motorola
motorola rf device
MRF641
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MBB284
Abstract: BFG35 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION
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BFG35
OT223
BFG55.
BFG35
MSB002
OT223.
MBB284
BFG35 amplifier
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BFG135 amplifier
Abstract: BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
MBB285
MBB287
BFG135 amplifier
BFG135 A amplifier
BFG135 TRANSISTOR
BFG135
MEA946
MEA945
MBB298
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2N5179
Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
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2N5179
2N5179
npn UHF transistor 2N5179
rf power amplifier transistor with s-parameters
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
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2N5179
2N5179
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TRANSISTOR ML6
Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain
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BFQ270
OT172A1.
TRANSISTOR ML6
TRANSISTOR ML5
resistor MR25 philips
SFR16T
philips MR25
npn 2222 transistor
ZO 103 MA 75 533
resistor MR25
Miniature Ceramic Plate Capacitors 2222 philips
MR25 resistor
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NPN planar RF transistor
Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor
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BFG10;
BFG10/X
BFG10
NPN planar RF transistor
BFG10
SOT143 C9
XN-71
transistor K 2937
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Transistor W03
Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
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AN1465
START540
23dBm,
OT-343
SC-70)
30mils
Transistor W03
AN1465
ultra low noise NPN transistor
ultra linearity rf transistor
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ic ma 8910
Abstract: 2SC4319
Text: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4319
S21el2
Coll53
ic ma 8910
2SC4319
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smd transistor bcv62
Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
Text: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A
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MRF6401PHT/D
MRF6401
BCV62
1600-200otorola,
smd transistor bcv62
SMD Transistor Y14
TRANSISTOR HK SMD
Transistor t 2 smd motorola
8B TRANSISTOR SMD
RTW 317 SMD
smd transistor 8B
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 2 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 7-5dB f=2GHz Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4322
SC-59
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 5 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain. • N F=1.8dB , |S2 lel2= 7-5dB f=2GHz ± 0.1 1 . 2 5 Í 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4325
Na200
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 0 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 15dB f=lG H z 'S M A X IM U M RATINGS (Ta = 25°C)
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2SC4320
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 1 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lG H z ± 0.1 1 . 2 5 Í 0.1 M A X IM U M RATINGS (Ta = 25°C)
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2SC4321
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 4 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 9-5dB f=2GHz . " S M A X IM U M RATINGS (Ta = 25°C)
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2SC4324
EMITTE098
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BFG35
Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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BFG35
OT223
OT223.
MSA035
TRANSISTOR FQ
BFG35 amplifier
BHS111
npn 2222 transistor
TRANSISTOR NPN c4 nf
C2570
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