TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Search Results

TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3461 Abstract: ITR05611 ITR05612 ITR05613 ITR05614 ITR05616 Text: Ordering number:ENN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching tf : 0.1µs typ . · Wide ASO.	Original	ENN1596C 2SC3461 00V/8A 2SC3461] 2SC3461 ITR05611 ITR05612 ITR05613 ITR05614 ITR05616	PDF
2SC3461 Abstract: No abstract text available Text: Ordering number:EN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO.	Original	EN1596C 2SC3461 00V/8A 2SC3461] 2SC3461	PDF
transistor 2SC4429 Abstract: 2SC4429 28522 EN2852 2sc4429 equivalent Text: Ordering number:EN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.	Original	EN2852 2SC4429 00V/8A 2039D 2SC4429] transistor 2SC4429 2SC4429 28522 EN2852 2sc4429 equivalent	PDF
transistor 2SC4429 Abstract: 2SC4429 2sc4429 equivalent ITR06873 ITR06874 ITR06875 ITR06876 Text: Ordering number:ENN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.	Original	ENN2852 2SC4429 00V/8A 2039D 2SC4429] transistor 2SC4429 2SC4429 2sc4429 equivalent ITR06873 ITR06874 ITR06875 ITR06876	PDF
TRANSISTOR NPN 8A 800V high speed switching Abstract: 2SC3910 HIGH CURRENT HIGH SPEED SWITCHING NPN VCEO 800V Transistor 800V NPN Transistor 8A TRANSISTOR NPN 8A 800V npn transistor vceo 800v Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3910 DESCRIPTION •High Speed Switching ·High Collector-Base Breakdown Voltage: V BR CEO= 800V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for high speed switching applications	Original	2SC3910 TRANSISTOR NPN 8A 800V high speed switching 2SC3910 HIGH CURRENT HIGH SPEED SWITCHING NPN VCEO 800V Transistor 800V NPN Transistor 8A TRANSISTOR NPN 8A 800V npn transistor vceo 800v	PDF
NTE283 Abstract: npn 10a 800v Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include	Original	NTE283 NTE283 npn 10a 800v	PDF
2sd2581 Abstract: 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)	Original	2SD2581 2sd2581 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor	PDF
Untitled Abstract: No abstract text available Text: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE2677	PDF
TRANSISTOR NPN 8A 800V high speed switching Abstract: 2SC4924 NPN Transistor 8A npn transistor 1500v 2a Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION •High Breakdown Voltage: V BR CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection	Original	2SC4924 TRANSISTOR NPN 8A 800V high speed switching 2SC4924 NPN Transistor 8A npn transistor 1500v 2a	PDF
transistor 2SC4125 Abstract: 2SC4125 npn 10a 800v 2SC4125 TRANSISTOR TRANSISTOR NPN 8A 800V NPN Transistor 8A transistor 800V 1A NPN Transistor 1500V Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for very high-definition color display horizontal	Original	2SC4125 transistor 2SC4125 2SC4125 npn 10a 800v 2SC4125 TRANSISTOR TRANSISTOR NPN 8A 800V NPN Transistor 8A transistor 800V 1A NPN Transistor 1500V	PDF
BU2525AX Abstract: NPN Transistor 1500V TRANSISTOR NPN 8A 800V npn transistor vceo 800v Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2525AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of large	Original	BU2525AX 100mA BU2525AX NPN Transistor 1500V TRANSISTOR NPN 8A 800V npn transistor vceo 800v	PDF
Untitled Abstract: No abstract text available Text: J.£ii£u , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5079 f DESCRIPTION • High Breakdown Voltage: VCBO= 1500V (Min) • High Switching Speed • High Reliability	Original	KSD5079	PDF
NTE2348 Abstract: No abstract text available Text: NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V	Original	NTE2348 NTE2348	PDF
NTE2597 Abstract: No abstract text available Text: NTE2597 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V	Original	NTE2597 NTE2597	PDF

2sc3552 Abstract: transistor 2sC3552 transistor IC 12A 400v 2SC3552 M 2sc3552 transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION •High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	2SC3552 2sc3552 transistor 2sC3552 transistor IC 12A 400v 2SC3552 M 2sc3552 transistor	PDF
transistor IC 12A 400v Abstract: npn 10a 800v NPN Transistor 10A 400V power Diode 800V 12A power Diode 800V 20A NTE2598 Text: NTE2598 Silicon NPN Transistor High Voltage, High Current Switch TO3PBL Type Package Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V	Original	NTE2598 transistor IC 12A 400v npn 10a 800v NPN Transistor 10A 400V power Diode 800V 12A power Diode 800V 20A NTE2598	PDF
npn 10a 800v Abstract: NTE2598 Text: NTE2598 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V	Original	NTE2598 npn 10a 800v NTE2598	PDF
Untitled Abstract: No abstract text available Text: , Line. -d 'onauekoi Lpi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. KSD5090 Silicon NPN Power Transistor I1 DESCRIPTION 2 1 • High Breakdown Voltage- 1^ri 1 : VCBO= 1500V (Min) • High Switching Speed	Original	KSD5090	PDF
400VF Abstract: npn 10a 800v 2SC3461 Text: I Ordering num ber:EN 1596C _2SC3461 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.	OCR Scan	1596C 2SC3461 00V/8A 300ps 7cH707Li DD5D114 400VF npn 10a 800v 2SC3461	PDF
2SC4429 Abstract: ic 204 rac 6a 400v Text: Ordering number: EN 2852 2SC4429 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications F eatures - High breakdown voltage, high reliability • Fast switching speed tf: O.ljis typ • Wide ASO • Adoption of MBIT process	OCR Scan	2SC4429 00V/8A 300ps 002D2D1 DDS02DH 2SC4429 ic 204 rac 6a 400v	PDF
npn triple diffused transistor 500v 8a Abstract: No abstract text available Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage (V c b o = 1 500V) • High Speed Switching (tf=0.1/jS) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating	OCR Scan	KSD5090 500/uH npn triple diffused transistor 500v 8a	PDF
Untitled Abstract: No abstract text available Text: bGE D • fllBBlß? DQOGS1B 57b H S I I L B SEMELAB PLC SEMELAB T~-33-\3 BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A T A D im ensio ns in m m D esigned for use in electronic ballast lighting applications	OCR Scan	BUL52B 300/iS	PDF
Untitled Abstract: No abstract text available Text: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Switching . Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage VcBO 1100 V VcEO 800 V Emitter Base Voltage Collector Current DC	OCR Scan	KSC3552	PDF
3330 transistor Abstract: No abstract text available Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage ( V C b o = 1 500V) • High Speed Switching (tf = 0.1 uS) ABSOLUTE MAXIMUM RATINGS Symbol Characteristic	OCR Scan	KSD5090 3330 transistor	PDF

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TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Search Results

TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Result Highlights (5)

TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Datasheets Context Search

2SC3461

2SC3461

transistor 2SC4429

transistor 2SC4429

TRANSISTOR NPN 8A 800V high speed switching

NTE283

2sd2581

Untitled

TRANSISTOR NPN 8A 800V high speed switching

transistor 2SC4125

BU2525AX

Untitled

NTE2348

NTE2597

2sc3552

transistor IC 12A 400v

npn 10a 800v

Untitled

400VF

2SC4429

npn triple diffused transistor 500v 8a

Untitled

Untitled

3330 transistor