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    TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Search Results

    TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 8A 800V HIGH SPEED SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3461

    Abstract: ITR05611 ITR05612 ITR05613 ITR05614 ITR05616
    Text: Ordering number:ENN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching tf : 0.1µs typ . · Wide ASO.


    Original     		PDF ENN1596C 2SC3461 00V/8A 2SC3461] 2SC3461 ITR05611 ITR05612 ITR05613 ITR05614 ITR05616

    2SC3461

    Abstract: No abstract text available
    Text: Ordering number:EN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO.


    Original     		PDF EN1596C 2SC3461 00V/8A 2SC3461] 2SC3461

    transistor 2SC4429

    Abstract: 2SC4429 28522 EN2852 2sc4429 equivalent
    Text: Ordering number:EN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF EN2852 2SC4429 00V/8A 2039D 2SC4429] transistor 2SC4429 2SC4429 28522 EN2852 2sc4429 equivalent

    transistor 2SC4429

    Abstract: 2SC4429 2sc4429 equivalent ITR06873 ITR06874 ITR06875 ITR06876
    Text: Ordering number:ENN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2852 2SC4429 00V/8A 2039D 2SC4429] transistor 2SC4429 2SC4429 2sc4429 equivalent ITR06873 ITR06874 ITR06875 ITR06876

    TRANSISTOR NPN 8A 800V high speed switching

    Abstract: 2SC3910 HIGH CURRENT HIGH SPEED SWITCHING NPN VCEO 800V Transistor 800V NPN Transistor 8A TRANSISTOR NPN 8A 800V npn transistor vceo 800v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3910 DESCRIPTION •High Speed Switching ·High Collector-Base Breakdown Voltage: V BR CEO= 800V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for high speed switching applications


    Original     		PDF 2SC3910 TRANSISTOR NPN 8A 800V high speed switching 2SC3910 HIGH CURRENT HIGH SPEED SWITCHING NPN VCEO 800V Transistor 800V NPN Transistor 8A TRANSISTOR NPN 8A 800V npn transistor vceo 800v

    NTE283

    Abstract: npn 10a 800v
    Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include


    Original     		PDF NTE283 NTE283 npn 10a 800v

    2sd2581

    Abstract: 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    Original     		PDF 2SD2581 2sd2581 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor

    Untitled

    Abstract: No abstract text available
    Text: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2677

    TRANSISTOR NPN 8A 800V high speed switching

    Abstract: 2SC4924 NPN Transistor 8A npn transistor 1500v 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION •High Breakdown Voltage: V BR CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection


    Original     		PDF 2SC4924 TRANSISTOR NPN 8A 800V high speed switching 2SC4924 NPN Transistor 8A npn transistor 1500v 2a

    transistor 2SC4125

    Abstract: 2SC4125 npn 10a 800v 2SC4125 TRANSISTOR TRANSISTOR NPN 8A 800V NPN Transistor 8A transistor 800V 1A NPN Transistor 1500V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for very high-definition color display horizontal


    Original     		PDF 2SC4125 transistor 2SC4125 2SC4125 npn 10a 800v 2SC4125 TRANSISTOR TRANSISTOR NPN 8A 800V NPN Transistor 8A transistor 800V 1A NPN Transistor 1500V

    BU2525AX

    Abstract: NPN Transistor 1500V TRANSISTOR NPN 8A 800V npn transistor vceo 800v
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2525AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of large


    Original     		PDF BU2525AX 100mA BU2525AX NPN Transistor 1500V TRANSISTOR NPN 8A 800V npn transistor vceo 800v

    Untitled

    Abstract: No abstract text available
    Text: J.£ii£u , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5079 f DESCRIPTION • High Breakdown Voltage: VCBO= 1500V (Min) • High Switching Speed • High Reliability


    Original     		PDF KSD5079

    NTE2348

    Abstract: No abstract text available
    Text: NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V


    Original     		PDF NTE2348 NTE2348

    NTE2597

    Abstract: No abstract text available
    Text: NTE2597 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V


    Original     		PDF NTE2597 NTE2597

    2sc3552

    Abstract: transistor 2sC3552 transistor IC 12A 400v 2SC3552 M 2sc3552 transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION •High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃


    Original     		PDF 2SC3552 2sc3552 transistor 2sC3552 transistor IC 12A 400v 2SC3552 M 2sc3552 transistor

    transistor IC 12A 400v

    Abstract: npn 10a 800v NPN Transistor 10A 400V power Diode 800V 12A power Diode 800V 20A NTE2598
    Text: NTE2598 Silicon NPN Transistor High Voltage, High Current Switch TO3PBL Type Package Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V


    Original     		PDF NTE2598 transistor IC 12A 400v npn 10a 800v NPN Transistor 10A 400V power Diode 800V 12A power Diode 800V 20A NTE2598

    npn 10a 800v

    Abstract: NTE2598
    Text: NTE2598 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V


    Original     		PDF NTE2598 npn 10a 800v NTE2598

    Untitled

    Abstract: No abstract text available
    Text: , Line. -d 'onauekoi Lpi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. KSD5090 Silicon NPN Power Transistor I1 DESCRIPTION 2 1 • High Breakdown Voltage- 1^ri 1 : VCBO= 1500V (Min) • High Switching Speed


    Original     		PDF KSD5090

    400VF

    Abstract: npn 10a 800v 2SC3461
    Text: I Ordering num ber:EN 1596C _2SC3461 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.


    OCR Scan     		PDF 1596C 2SC3461 00V/8A 300ps 7cH707Li DD5D114 400VF npn 10a 800v 2SC3461

    2SC4429

    Abstract: ic 204 rac 6a 400v
    Text: Ordering number: EN 2852 2SC4429 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications F eatures - High breakdown voltage, high reliability • Fast switching speed tf: O.ljis typ • Wide ASO • Adoption of MBIT process


    OCR Scan     		PDF 2SC4429 00V/8A 300ps 002D2D1 DDS02DH 2SC4429 ic 204 rac 6a 400v

    npn triple diffused transistor 500v 8a

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage (V c b o = 1 500V) • High Speed Switching (tf=0.1/jS) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating


    OCR Scan     		PDF KSD5090 500/uH npn triple diffused transistor 500v 8a

    Untitled

    Abstract: No abstract text available
    Text: bGE D • fllBBlß? DQOGS1B 57b H S I I L B SEMELAB PLC SEMELAB T~-33-\3 BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A T A D im ensio ns in m m D esigned for use in electronic ballast lighting applications


    OCR Scan     		PDF BUL52B 300/iS

    Untitled

    Abstract: No abstract text available
    Text: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Switching . Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage VcBO 1100 V VcEO 800 V Emitter Base Voltage Collector Current DC


    OCR Scan     		PDF KSC3552

    3330 transistor

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage ( V C b o = 1 500V) • High Speed Switching (tf = 0.1 uS) ABSOLUTE MAXIMUM RATINGS Symbol Characteristic


    OCR Scan     		PDF KSD5090 3330 transistor