ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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MSD42WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA MSD42WT1 Preliminary Information NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier
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MSD42WT1/D
MSD42WT1
SC-70/SOT-323
7-inch/3000
MSD42WT1
SMD310
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transistor C 548 B
Abstract: BUY69A C 547 transistor 22iJ
Text: r = 7 SGS-THOMSON *>11 ¡«imiiigTOMOigS_ BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR • . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE
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BUY69A
BUY69A
transistor C 548 B
C 547 transistor
22iJ
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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PZTA42T1
Abstract: SMD310
Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3
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PZTA42T1/D
PZTA42T1
PZTA42T1
SMD310
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Motorola AN222A
Abstract: MJ10023 1N4937 sps transistor
Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS
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MJ10023/D
MJ10023
MJ10023
DeviceMJ10023/D
Motorola AN222A
1N4937
sps transistor
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MJ423
Abstract: mj423 motorola MOTOROLA TRANSISTOR
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits.
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MJ423/D
MJ423
mj423 motorola
MOTOROLA TRANSISTOR
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BF720T1
Abstract: SMD310
Text: MOTOROLA Order this document by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage
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BF720T1/D
BF720T1
BF720T1
SMD310
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BD169D
Abstract: BD169 transistor bd169 transistor bd170 BD170 Motorola design of audio amplifier MOTOROLA TRANSISTOR
Text: MOTOROLA Order this document by BD169/D SEMICONDUCTOR TECHNICAL DATA BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
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BD169/D
BD169D
BD169
transistor bd169
transistor bd170
BD170
Motorola design of audio amplifier
MOTOROLA TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BD169/D SEMICONDUCTOR TECHNICAL DATA BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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transistor c 9018
Abstract: No abstract text available
Text: UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner. 1 TO-92 ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT Collector-Base Voltage PARAMETER
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100uA
transistor c 9018
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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MJE 340 transistor
Abstract: 3140e
Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
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MRF1047T1
MRF1047T1/D
MJE 340 transistor
3140e
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200E
Abstract: MRF1047 MRF1047T1
Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
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MRF1047T1
MRF1047T1
200E
MRF1047
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transistor KIA-70
Abstract: transistor C 547 transistor equivalent
Text: NEC DESCRIPTION NPN SILICON TRANSISTOR BA1 L4L The BA1L4L is designed for use in medium speed switching circuit. FEATURE • Bias resistors built-in type NPN transistor equivalent circuit. iC Rt = 47 k SI R2 = 22 ki2 ABSOLUTE M A X IM U M RATINGS Maximum Temperatures
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MSD1819A-RT1
Abstract: SMD310 sot323 transistor marking MOTOROLA
Text: MOTOROLA Order this document by MSD1819A–RT1/D SEMICONDUCTOR TECHNICAL DATA MSD1819A-RT1 NPN Silicon General Purpose Amplifier Transistor Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package
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MSD1819A
MSD1819A-RT1
SC-70/SOT-323
7-inch/3000
MSD1819A-RT1
SMD310
sot323 transistor marking MOTOROLA
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200E
Abstract: MRF1047 MRF1047T1
Text: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA
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MRF1047T1/D
25SEP01
26MAR02
200E
MRF1047
MRF1047T1
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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MRF548
Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Text: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli
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b3b72S4
MRF531
MRF542
AN938,
MRF542,
MRF548
00R4741
T-33-05
MRF548
MRF531
MRF548 MOTOROLA
MRF531 motorola
LG CRT
MRF534
motorola AN938
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